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Determination of critical layer thickness in InxGa1-xAs/GaAs heterostructures by x-ray diffraction

Applied physics letters, 1987-04, Vol.50 (15), p.980-982

1987

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Ellipsometry: a technique for real time monitoring and analysis of MBE-grown CdHgTe and CdTe/HgTe superlattices

Journal of crystal growth, 1992-02, Vol.117 (1), p.166-170

1992

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Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy

Applied physics letters, 1988-07, Vol.53 (2), p.113-115

1988

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Phase modulated ellipsometry used for composition control during MBE growth of CdHgTe : An analysis of instrumental factors and an assessment of the material produced

Journal of electronic materials, 1996-09, Vol.25 (9), p.1521-1526

1996

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Photoluminescence in strained InGaAs-GaAs heterostructures

Journal of applied physics, 1987-11, Vol.62 (9), p.3898-3901

1987

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Effect of strain on the band structure of InGaAs

Physica scripta, 1990-04, Vol.41 (4), p.617-620

1990

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Band structure of InGaAs

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1989-07, Vol.7 (4), p.2525-2531

1989

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Angle-resolved X-ray photoemission from core levels of c(2 × 2) CO on Ni(001): Single-scattering theory and effects of vibration

Surface science, 1982-07, Vol.119 (2), p.371-383

1982

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In-situ ellipsometric measurements of the MBE growth of CdTe/HgTe and CdTe/ZnTe superlattices

Journal of electronic materials, 1993-08, Vol.22 (8), p.1097-1102

1993

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Quantitative analysis of a submonolayer adsorption system by angle resolved XPS: c(2×2)S on Ni(001)

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1984-07, Vol.2 (3), p.1333-1338

1984

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Real time control of the molecular-beam epitaxial growth of CdHgTe and CdTe/HgTe superlattices using ellipsometry

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1992-07, Vol.10 (4), p.1410-1414

1992

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Surface-structure determinations by means of off-normal photoelectron diffraction: a kinematical analysis

Physical review. B, Condensed matter, 1983-01, Vol.28 (8), p.4867-4870

1983

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Single-scattering cluster calculations and Fourier-transform analyses of normal photoelectron diffraction

Physical review. B, Condensed matter, 1983, Vol.27 (2), p.781-798

1983

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Intermediate-energy azimuthal photoelectron diffraction from c(2×2)S(1s) on Ni(001) in a geometry emphasizing substrate backscattering

Physical review. B, Condensed matter, 1984-01, Vol.30 (4), p.1838-1843

1984

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Adsorbate core-level azimuthal photoelectron diffraction at intermediate energies of 230-900 eV: grazing emission with polarization dependence

Physical review. B, Condensed matter, 1984-01, Vol.30 (4), p.1833-1837

1984

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Angle-resolved photoemission from the valence bands of NiTe2, PdTe2 and PtTe2

Journal of physics. F, Metal physics, 1982-01, Vol.12, p.2737

1982

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Temperature dependence of azimuthal X-ray photoelectron diffraction (XPD) from Cu2p3/2 core level of Cu(001): experiment and single scattering cluster calculations

Solid state communications, 1984, Vol.50 (4), p.315-319

1984

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Electronic structure of the valence bands of SnF2 studied by ultraviolet photoelectron spectroscopy

Chemical physics letters, 1978-03, Vol.54 (2), p.220-222

1978

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Determination of critical layer thickness in In x Ga1− x As/GaAs heterostructures by x-ray diffraction

Applied physics letters, 1987-04, Vol.50 (15), p.980-982

1987

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Electron trajectory analysis of the spherical-sector electrostatic spectrometer: focussing properties and multichannel detection capability

Journal of electron spectroscopy and related phenomena, 1989, Vol.48 (1), p.55-99

1989

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Angle-resolved x-ray photoemission and Auger emission from core levels of c ( 2 × 2 ) S and Se on Ni(001): Diffraction effects and single-scattering theory

Physical review. B, Condensed matter, 1981-01, Vol.24 (10), p.6163-6166

1981

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Electron trajectory analysis of the spherical-sector electrostatic spectrometer: focussing properties and mutichannel detection capability

Journal of electron spectroscopy and related phenomena, 1989, Vol.48 (1-2), p.55-99

1989

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Temperature Dependence of Azimuthal X-Ray Photoelectron Diffraction (XPD) From Cu2p sub 3/2 Core Level of Copper (001); Experiment and Single Scattering Cluster Calculations

Solid state communications, 1984-04, Vol.50 (4), p.315-319

1984

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Angle-Resolved Photoemission From the Valence Bands of NiTe sub 2 , PdTe sub 2 , and PtTe sub 2

Journal of physics. F, Metal physics, 1982-11, Vol.12 (11), p.2737-2753

1982

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Angle-resolved photoemission from the valence bands of NiTe 2 , PdTe 2 and PtTe 2

Journal of physics. F, Metal physics, 1982-11, Vol.12 (11), p.2737-2753

1982

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Determination of critical layer thickness in InxGa1-xAs/GaAs heterostructures by x-ray diffraction

Ellipsometry: a technique for real time monitoring and analysis of MBE-grown CdHgTe and CdTe/HgTe superlattices

Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy

Phase modulated ellipsometry used for composition control during MBE growth of CdHgTe : An analysis of instrumental factors and an assessment of the material produced

Photoluminescence in strained InGaAs-GaAs heterostructures

Effect of strain on the band structure of InGaAs

Band structure of InGaAs

Angle-resolved X-ray photoemission from core levels of c(2 × 2) CO on Ni(001): Single-scattering theory and effects of vibration

In-situ ellipsometric measurements of the MBE growth of CdTe/HgTe and CdTe/ZnTe superlattices

Quantitative analysis of a submonolayer adsorption system by angle resolved XPS: c(2×2)S on Ni(001)

Real time control of the molecular-beam epitaxial growth of CdHgTe and CdTe/HgTe superlattices using ellipsometry

Surface-structure determinations by means of off-normal photoelectron diffraction: a kinematical analysis

Single-scattering cluster calculations and Fourier-transform analyses of normal photoelectron diffraction

Intermediate-energy azimuthal photoelectron diffraction from c(2×2)S(1s) on Ni(001) in a geometry emphasizing substrate backscattering

Adsorbate core-level azimuthal photoelectron diffraction at intermediate energies of 230-900 eV: grazing emission with polarization dependence

Angle-resolved photoemission from the valence bands of NiTe2, PdTe2 and PtTe2

Temperature dependence of azimuthal X-ray photoelectron diffraction (XPD) from Cu2p3/2 core level of Cu(001): experiment and single scattering cluster calculations

Electronic structure of the valence bands of SnF2 studied by ultraviolet photoelectron spectroscopy

Determination of critical layer thickness in In x Ga1− x As/GaAs heterostructures by x-ray diffraction

Electron trajectory analysis of the spherical-sector electrostatic spectrometer: focussing properties and multichannel detection capability

Angle-resolved x-ray photoemission and Auger emission from core levels of c ( 2 × 2 ) S and Se on Ni(001): Diffraction effects and single-scattering theory

Electron trajectory analysis of the spherical-sector electrostatic spectrometer: focussing properties and mutichannel detection capability

Temperature Dependence of Azimuthal X-Ray Photoelectron Diffraction (XPD) From Cu2p sub 3/2 Core Level of Copper (001); Experiment and Single Scattering Cluster Calculations

Angle-Resolved Photoemission From the Valence Bands of NiTe sub 2 , PdTe sub 2 , and PtTe sub 2

Angle-resolved photoemission from the valence bands of NiTe 2 , PdTe 2 and PtTe 2

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