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Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications

AIP advances, 2021-11, Vol.11 (11), p.115123-115123-16

Omura, Yasuhisa

2021

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Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Micromachines (Basel), 2018-12, Vol.10 (1), p.5

Omura, Yasuhisa

2018

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Theoretical Consideration on Potential and Scalability of Optical Rotors based on a pn-Junction Rod

Sensors & transducers, 2019-07, Vol.235 (7), p.1-8

Omura, Yasuhisa

2019

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Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Theoretical analysis of the impacts of light illumination on the transient current of sputter-deposited non-doped ZnO films

AIP advances, 2021-01, Vol.11 (1), p.015030-015030-9

2021

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SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors

Omura, Yasuhisa

1, 2013

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Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

Active and Passive Electronic Components, 2016-01, Vol.2016 (2016), p.1-8

2016

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Feasible Time Evolution Model That Predicts Breakdown in Thin SiO2 Films within Unstressed Interval after Constant-Current Stress

Advances in materials science and engineering, 2015-01, Vol.2015 (2015), p.1-8

2015

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MOS Devices for Low-Voltage and Low-Energy Applications

1, 2016

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Extension of analytical model for conduction band nonparabolicity to transport analysis of nanoscale metal-oxide-semiconductor field-effect transistor

Journal of applied physics, 2009-01, Vol.105 (1)

Omura, Yasuhisa

2009

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(Invited) Potential of Silicon Oxide Films for Low-Cost and High-Performance Resistive Switching Devices

ECS transactions, 2023-05, Vol.111 (1), p.123-133

Omura, Yasuhisa

2023

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Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

Japanese Journal of Applied Physics, 2017-04, Vol.56 (4), p.41301-041301

2017

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Design Feasibility of High-Performance Si Wire Gate-All-Around Metal--Oxide--Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime

Japanese Journal of Applied Physics, 2011-01, Vol.50 (1), p.014201-014201-5

Omura, Yasuhisa

2011

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Proposal of Field-Emission Device Capped with an Insulator Film and Aspects of Expected Performance

ECS journal of solid state science and technology, 2022-11, Vol.11 (11), p.116001

Omura, Yasuhisa

2022

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Possible theoretical models for carrier diffusion coefficient of one-dimensional Si wire devices

Japanese Journal of Applied Physics, 2015-05, Vol.54 (5), p.54001

2015

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Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime

Japanese Journal of Applied Physics, 2011-01, Vol.50 (1R), p.14201

Omura, Yasuhisa

2011

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Theoretical Assessment of Impacts of Energy Band Valley Occupation on Diffusion Coefficient of Nano-Scale Ge Wires

ECS journal of solid state science and technology, 2022-03, Vol.11 (3), p.33005

Omura, Yasuhisa

2022

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Model-Based Theoretical Prediction of the Electric Field Dependence of the Diffusion Coefficients of Various Semiconductor Wires

Jordan Journal of Electrical Engineering, 2024, Vol.11 (1), p.1

Omura, Yasuhisa

2024

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Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate

Solid-state electronics, 2023-08, Vol.206, p.108670, Article 108670

2023

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Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

ECS journal of solid state science and technology, 2021-12, Vol.10 (12), p.124006

Omura, Yasuhisa

2021

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Cross-Current Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor and Application to Multiple Voltage Reference Circuits

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4S), p.4

Omura, Yasuhisa

2009

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Theoretical Estimation of Power Generation Performance of Nano-Sheet Planar Lateral P-N Junction under Illumination

Jordan Journal of Electrical Engineering, 2023, Vol.9 (3), p.272

Omura, Yasuhisa

2023

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A Practical Model of Hole Effective Mass of Si on Si 1−x Ge x Modulated by External Electric Field and External Strain

ECS journal of solid state science and technology, 2021-06, Vol.10 (6), p.65017

Omura, Yasuhisa

2021

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Blockade and Staircase Phenomena of Holes in Mesoscopic Scale \lambda -Deoxyribonucleic Acid/SiO2/Si Structure

IEEE electron device letters, 2016-02, Vol.37 (2), p.224-227

2016

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The Impact of Light Illumination on Capacitance-Voltage Characteristics of Constant-Current-Stressed Metal-Oxide-Semiconductor Capacitors

Jordan Journal of Electrical Engineering, 2022-03, Vol.8 (1), p.1

Omura, Yasuhisa

2022

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Master-equation-based approach to stochastic processes in few-electron systems and advanced considerations for practical applications

Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Theoretical Consideration on Potential and Scalability of Optical Rotors based on a pn-Junction Rod

Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors

Theoretical analysis of the impacts of light illumination on the transient current of sputter-deposited non-doped ZnO films

SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors

Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

Feasible Time Evolution Model That Predicts Breakdown in Thin SiO2 Films within Unstressed Interval after Constant-Current Stress

MOS Devices for Low-Voltage and Low-Energy Applications

Extension of analytical model for conduction band nonparabolicity to transport analysis of nanoscale metal-oxide-semiconductor field-effect transistor

(Invited) Potential of Silicon Oxide Films for Low-Cost and High-Performance Resistive Switching Devices

Roles of chemical stoichiometry and hot electrons in realizing the stable resistive transition of sputter-deposited silicon oxide films

Design Feasibility of High-Performance Si Wire Gate-All-Around Metal--Oxide--Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime

Proposal of Field-Emission Device Capped with an Insulator Film and Aspects of Expected Performance

Possible theoretical models for carrier diffusion coefficient of one-dimensional Si wire devices

Design Feasibility of High-Performance Si Wire Gate-All-Around Metal–Oxide–Semiconductor Field-Effect Transistor in Sub-30-nm-Channel Regime

Theoretical Assessment of Impacts of Energy Band Valley Occupation on Diffusion Coefficient of Nano-Scale Ge Wires

Model-Based Theoretical Prediction of the Electric Field Dependence of the Diffusion Coefficients of Various Semiconductor Wires

Simulation study on physical parameters ruling unipolar resistance switching of sputter-deposited silicon oxide film on Si substrate

Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

Cross-Current Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor and Application to Multiple Voltage Reference Circuits

Theoretical Estimation of Power Generation Performance of Nano-Sheet Planar Lateral P-N Junction under Illumination

A Practical Model of Hole Effective Mass of Si on Si 1−x Ge x Modulated by External Electric Field and External Strain

Blockade and Staircase Phenomena of Holes in Mesoscopic Scale \lambda -Deoxyribonucleic Acid/SiO2/Si Structure

The Impact of Light Illumination on Capacitance-Voltage Characteristics of Constant-Current-Stressed Metal-Oxide-Semiconductor Capacitors

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