UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.356-362

2006

Volltextzugriff (PDF)

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2528-2531

2003

Volltextzugriff (PDF)

Development of fast short-circuit protection system for advanced IGBT

Microelectronics and reliability, 2019-09, Vol.100-101, p.113408, Article 113408

2019

Volltextzugriff (PDF)

Single PCB sensor-based output current reproduction for three-phase inverter systems

Power electronic devices and components, 2024-04, Vol.7, p.100053, Article 100053

2024

Volltextzugriff (PDF)

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

IEEE transactions on electron devices, 2007-08, Vol.54 (8), p.1825-1830

2007

Volltextzugriff (PDF)

A power cycling degradation inspector of power semiconductor devices

Microelectronics and reliability, 2018-09, Vol.88-90, p.458-461

2018

Volltextzugriff (PDF)

Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage

IEEE transactions on electron devices, 2005-02, Vol.52 (2), p.159-164

2005

Volltextzugriff (PDF)

Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications

Microelectronics and reliability, 2017-09, Vol.76-77, p.465-469

2017

Volltextzugriff (PDF)

Real-time imaging of temperature distribution inside a power device under a power cycling test

Microelectronics and reliability, 2017-09, Vol.76-77, p.490-494

2017

Volltextzugriff (PDF)

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

IEEE electron device letters, 2008-01, Vol.29 (1), p.8-10

2008

Volltextzugriff (PDF)

Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustic Tomography (SAT)

Microelectronics and reliability, 2012-09, Vol.52 (9-10), p.2081-2086

2012

Volltextzugriff (PDF)

Failure analysis of power devices based on real-time monitoring

Microelectronics and reliability, 2015-08, Vol.55 (9-10), p.2032-2035

2015

Volltextzugriff (PDF)

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1933-1937

2011

Volltextzugriff (PDF)

On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

IEEE electron device letters, 2007-08, Vol.28 (8), p.676-678

2007

Volltextzugriff (PDF)

Short-circuit protection for an IGBT with detecting the gate voltage and gate charge

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1897-1900

2014

Volltextzugriff (PDF)

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.1891-1896

2014

Volltextzugriff (PDF)

High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

IEEE transactions on electron devices, 2004-11, Vol.51 (11), p.1913-1917

2004

Volltextzugriff (PDF)

Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs

IEEE transactions on electron devices, 2009-07, Vol.56 (7), p.1371-1376

2009

Volltextzugriff (PDF)

Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

IEEE electron device letters, 2006-05, Vol.27 (5), p.326-328

2006

Volltextzugriff (PDF)

“Design for EMI” approach on power PiN diode reverse recovery

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1972-1975

2011

Volltextzugriff (PDF)

Why Digital Displays Cannot Replace Paper: The Cognitive Science of Media for Reading and Writing

1st Edition 2020, 2020

Volltextzugriff (PDF)

High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

IEEE transactions on electron devices, 2005-10, Vol.52 (10), p.2317-2322

2005

Volltextzugriff (PDF)

Short-circuit protection scheme with efficient soft turn-off for power modules

Microelectronics and reliability, 2023-11, Vol.150, p.115078, Article 115078

2023

Volltextzugriff (PDF)

Switching of 3300V Scaled IGBT by 5V Gate Drive

2019 IEEE 13th International Conference on ASIC (ASICON), 2019, p.1-3

2019

Volltextzugriff (PDF)

Peak minimisation based gate delay compensation for active current balancing of parallel IGBT system

Microelectronics and reliability, 2019-09, Vol.100-101, p.113426, Article 113426

2019

Volltextzugriff (PDF)

1 – 25 von 11.023

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(7.524)
Mit Volltextzugriff
(8.713)

Publikationsform

5 weitere anzeigen...

Weniger anzeigen...

Sprache

5 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(5.447)
Life Sciences & Biomedicine
(3.599)
Humans
(1.705)
Physical Sciences
(1.444)
Biological And Medical Sciences
(1.346)
Animals
(1.227)
Male
(1.170)
Female
(932)
Technology
(885)
Medical Sciences
(769)
Pharmacology & Pharmacy
(697)
Microbiology
(664)
Fundamental And Applied Biological Sciences. Psychology
(655)
Physics
(644)
Chemistry
(624)
Middle Aged
(617)
Engineering
(560)
Adult
(532)
Biotechnology & Applied Microbiology
(520)
Aged
(507)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

EZB Electronic Journals Library
(4.786)
MEDLINE
(3.405)
Ingenta
(3.067)
Journals@Ovid Full Text
(1.578)
Access via ScienceDirect (Elsevier)
(1.503)
NUS Single-Journal Subscriptions
(1.342)
Wiley-Blackwell Journals
(1.240)
Elsevier Journal Backfiles on ScienceDirect (DFG Nationallizenzen)
(1.167)
IngentaConnect Journals
(916)
Springer Nature - Connect here FIRST to enable access
(833)
Springer Journals
(747)
Wiley Online Library
(671)
IEEE Xplore Digital Library
(632)
SpringerLINK Contemporary (Konsortium Baden-Württemberg)
(481)
Oxford Journals
(449)
Ebook Central Perpetual and DDA
(298)
eBooks on EBSCOhost
(288)
Taylor & Francis Journals Complete
(249)
Taylor & Francis Journals
(197)
Wiley Online Library All Obooks
(177)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Development of fast short-circuit protection system for advanced IGBT

Single PCB sensor-based output current reproduction for three-phase inverter systems

Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

A power cycling degradation inspector of power semiconductor devices

Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage

Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications

Real-time imaging of temperature distribution inside a power device under a power cycling test

A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT

Real-time failure imaging system under power stress for power semiconductors using Scanning Acoustic Tomography (SAT)

Failure analysis of power devices based on real-time monitoring

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part I

On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

Short-circuit protection for an IGBT with detecting the gate voltage and gate charge

Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II

High breakdown Voltage undoped AlGaN-GaN power HEMT on sapphire substrate and its demonstration for DC-DC converter application

Effect of Buffer Layer Structure on Drain Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs

Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

“Design for EMI” approach on power PiN diode reverse recovery

Why Digital Displays Cannot Replace Paper: The Cognitive Science of Media for Reading and Writing

High breakdown voltage (>1000 V) semi-superjunction MOSFETs using 600-V class superjunction MOSFET process

Short-circuit protection scheme with efficient soft turn-off for power modules

Switching of 3300V Scaled IGBT by 5V Gate Drive

Peak minimisation based gate delay compensation for active current balancing of parallel IGBT system

Suchergebnisse filtern