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Raman measurements of uniaxial strain in silicon nanostructures

Journal of applied physics, 2013-10, Vol.114 (14)

2013

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MFM Study of a Sintered Nd-Fe-B Magnet: Analyzing Domain Structure and Measuring Defect Size in 3-D View

IEEE transactions on magnetics, 2016-06, Vol.52 (6), p.1-10

2016

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Time and Frequency Domain Characterization of Transistor Self-Heating

IEEE transactions on electron devices, 2013-06, Vol.60 (6), p.1844-1851

2013

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Strain in silicon nanowire beams

Journal of applied physics, 2012-12, Vol.112 (11)

2012

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The High-Mobility Bended n-Channel Silicon Nanowire Transistor

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.866-876

2010

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On-chip tensile testing of nanoscale silicon free-standing beams

Journal of materials research, 2012-02, Vol.27 (3), p.571-579

2012

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Roughness analysis in strained silicon-on-insulator wires and films

Journal of applied physics, 2014-09, Vol.116 (12)

2014

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Thermoelectric characterization of nickel-nanowires and nanoparticles embedded in silica aerogels

AIP advances, 2018-06, Vol.8 (6), p.065221-065221-8

2018

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Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1142-1152

2006

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Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.4016-4023

2011

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Strained-Silicon Heterojunction Bipolar Transistor

IEEE transactions on electron devices, 2010-06, Vol.57 (6), p.1243-1252

2010

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Using Piezoresistance Model With C- R Conversion for Modeling of Strain-Induced Mobility

IEEE electron device letters, 2008-09, Vol.29 (9), p.1062-1064

2008

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Improved self-gain in deep submicrometer strained silicon―germanium pMOSFETs with HfSiOx/TiSiN gate stacks

Microelectronic engineering, 2010-11, Vol.87 (11), p.2196-2199

2010

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Modeling of the threshold voltage in strained Si /Si1-xGex/Si1-yGey(x≥ y) CMOS architectures

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.3040-3048

2007

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Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3041-3048

2009

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Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n -channel metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2008-02, Vol.103 (4), p.044501-044501-4

2008

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Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2277-2284

2009

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Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

IEEE electron device letters, 2010-05, Vol.31 (5), p.419-421

2010

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Insight Into the Aggravated Lifetime Reliability in Advanced MOSFETs With Strained-Si Channels on SiGe Strain-Relaxed Buffers Due to Self-Heating

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1568-1573

2008

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Quantifying self-heating effects with scaling in globally strained Si MOSFETs

Solid-state electronics, 2007-11, Vol.51 (11), p.1473-1478

2007

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Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2296-2305

2006

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Doubling speed using strained Si/SiGe CMOS technology

Thin solid films, 2006-06, Vol.508 (1), p.338-341

2006

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Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Materials science & engineering. B, Solid-state materials for advanced technology, 2006-12, Vol.135 (3), p.203-206

2006

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Nanoscale strain characterisation for ultimate CMOS and beyond

Materials science in semiconductor processing, 2008-10, Vol.11 (5), p.271-278

2008

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Thermal Stability of Thin Virtual Substrates for High Performance Devices

MRS proceedings, 2006, Vol.913, Article 0913-D02-05

2006

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Raman measurements of uniaxial strain in silicon nanostructures

MFM Study of a Sintered Nd-Fe-B Magnet: Analyzing Domain Structure and Measuring Defect Size in 3-D View

Time and Frequency Domain Characterization of Transistor Self-Heating

Strain in silicon nanowire beams

The High-Mobility Bended n-Channel Silicon Nanowire Transistor

On-chip tensile testing of nanoscale silicon free-standing beams

Roughness analysis in strained silicon-on-insulator wires and films

Thermoelectric characterization of nickel-nanowires and nanoparticles embedded in silica aerogels

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices

Strained-Silicon Heterojunction Bipolar Transistor

Using Piezoresistance Model With C- R Conversion for Modeling of Strain-Induced Mobility

Improved self-gain in deep submicrometer strained silicon―germanium pMOSFETs with HfSiOx/TiSiN gate stacks

Modeling of the threshold voltage in strained Si /Si1-xGex/Si1-yGey(x≥ y) CMOS architectures

Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter

Influence of the Ge concentration in the virtual substrate on the low frequency noise in strained-Si surface n -channel metal-oxide-semiconductor field-effect transistors

Performance Enhancements in Scaled Strained-SiGe pMOSFETs With HfSiOx/TiSiN Gate Stacks

Direct Measurement of MOSFET Channel Strain by Means of Backside Etching and Raman Spectroscopy on Long-Channel Devices

Insight Into the Aggravated Lifetime Reliability in Advanced MOSFETs With Strained-Si Channels on SiGe Strain-Relaxed Buffers Due to Self-Heating

Quantifying self-heating effects with scaling in globally strained Si MOSFETs

Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

Doubling speed using strained Si/SiGe CMOS technology

Reliability study of ultra-thin gate oxides on strained-Si/SiGe MOS structures

Nanoscale strain characterisation for ultimate CMOS and beyond

Thermal Stability of Thin Virtual Substrates for High Performance Devices

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