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Dismantling barriers faced by women in STEM

Nature chemistry, 2022-11, Vol.14 (11), p.1203-1206

2022

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Epidemic management and control through risk-dependent individual contact interventions

PLoS computational biology, 2022-06, Vol.18 (6), p.e1010171

2022

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What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

Journal of applied physics, 2018-11, Vol.124 (18)

2018

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Parameter Uncertainty Quantification in an Idealized GCM With a Seasonal Cycle

Journal of advances in modeling earth systems, 2022-03, Vol.14 (3), p.n/a

2022

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Epithelial-derived TGF-β1 acts as a pro-viral factor in the lung during influenza A infection

Mucosal immunology, 2018-03, Vol.11 (2), p.523-535

2018

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Calibration and Uncertainty Quantification of Convective Parameters in an Idealized GCM

Journal of advances in modeling earth systems, 2021-09, Vol.13 (9), p.n/a

2021

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Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Applied physics letters, 2016-10, Vol.109 (15)

2016

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Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Journal of applied physics, 2018-08, Vol.124 (5)

2018

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Carrier localization in the vicinity of dislocations in InGaN

Journal of applied physics, 2017-01, Vol.121 (1)

2017

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The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Journal of applied physics, 2012-04, Vol.111 (8), p.083512-083512-6

2012

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Improvement of single photon emission from InGaN QDs embedded in porous micropillars

Applied physics letters, 2018-09, Vol.113 (10)

2018

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Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)

Faraday discussions, 2022-08, Vol.236, p.311-337

2022

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Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

Applied physics letters, 2012-11, Vol.101 (21)

2012

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The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Applied physics letters, 2014-09, Vol.105 (11)

2014

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Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

Applied physics letters, 2017-12, Vol.111 (25)

2017

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Microstructural origins of localization in InGaN quantum wells

Journal of physics. D, Applied physics, 2010-09, Vol.43 (35), p.354003

2010

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Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

Journal of crystal growth, 2006-04, Vol.289 (2), p.506-514

2006

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Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

Journal of crystal growth, 2013-11, Vol.383, p.12-18

2013

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Tribological manufacturing of ZDDP tribofilms functionalised by graphene nanoplatelets

JPhys materials, 2024-10, Vol.7 (4), p.45001

2024

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Porous nitride semiconductors reviewed

Journal of physics. D, Applied physics, 2020-09, Vol.53 (38), p.383002

2020

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The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

Applied physics letters, 2014-09, Vol.105 (9)

2014

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Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

Journal of crystal growth, 2007-03, Vol.300 (1), p.70-74

2007

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Support−Catalyst−Gas Interactions during Carbon Nanotube Growth on Metallic Ta Films

Journal of physical chemistry. C, 2011-03, Vol.115 (11), p.4359-4369

2011

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High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

Applied physics letters, 2013-01, Vol.102 (2)

2013

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Photoluminescence studies of cubic GaN epilayers

physica status solidi (b), 2017-08, Vol.254 (8), p.n/a

2017

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Dismantling barriers faced by women in STEM

Epidemic management and control through risk-dependent individual contact interventions

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

Parameter Uncertainty Quantification in an Idealized GCM With a Seasonal Cycle

Epithelial-derived TGF-β1 acts as a pro-viral factor in the lung during influenza A infection

Calibration and Uncertainty Quantification of Convective Parameters in an Idealized GCM

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers

Carrier localization in the vicinity of dislocations in InGaN

The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures

Improvement of single photon emission from InGaN QDs embedded in porous micropillars

Characterization of buried interfaces using Ga Kα hard X-ray photoelectron spectroscopy (HAXPES)

Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

Microstructural origins of localization in InGaN quantum wells

Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

Tribological manufacturing of ZDDP tribofilms functionalised by graphene nanoplatelets

Porous nitride semiconductors reviewed

The effects of Si-doped prelayers on the optical properties of InGaN/GaN single quantum well structures

Threading dislocation reduction in (0001) GaN thin films using SiNx interlayers

Support−Catalyst−Gas Interactions during Carbon Nanotube Growth on Metallic Ta Films

High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop

Photoluminescence studies of cubic GaN epilayers

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