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Electrically-pumped compact hybrid silicon microring lasers for optical interconnects

Optics express, 2009-10, Vol.17 (22), p.20355-20364

2009

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Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser

Optics express, 2016-05, Vol.24 (9), p.9132-9139

2016

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Influence of n-type doping in germanium crystalline films grown on silicon substrates on room-temperature photoluminescence and optical absorption

Japanese Journal of Applied Physics, 2018-02, Vol.57 (2), p.21303

2018

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Crystallinity improvements of Ge waveguides fabricated by epitaxial lateral overgrowth

Japanese Journal of Applied Physics, 2016-04, Vol.55 (4S), p.4

2016

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Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

Japanese Journal of Applied Physics, 2017-03, Vol.56 (3), p.32102-032102

2017

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Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits

Optics express, 2009-07, Vol.17 (15), p.12564-12570

2009

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On-chip optical interconnection using integrated germanium light emitters and photodetectors

Optics express, 2021-08, Vol.29 (18), p.28021-28036

2021

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Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.040205-040205-3

2010

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Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8R), p.88005

2011

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Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding

Japanese Journal of Applied Physics, 2011-08, Vol.50 (8), p.088005-088005-2

2011

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Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate

Japanese Journal of Applied Physics, 2011-02, Vol.50 (2), p.020206-020206-3

2011

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Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate

Japanese Journal of Applied Physics, 2006-11, Vol.45 (11R), p.8717

2006

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Passive waveguide loss measurements in an InGaN-based laser diode structure

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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GaInAsP/InP Membrane Lasers for Optical Interconnects

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1381-1389

2011

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Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

Thin solid films, 2014-04, Vol.557, p.355-362

2014

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A Light Source Using 1.3- \mu Lens-Integrated Surface-Emitting Laser for Silicon Platforms

IEEE photonics technology letters, 2014-06, Vol.26 (11), p.1089-1091

2014

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IEEE_Xplore

Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding

2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM), 2010, p.1-4

2010

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IEEE_Xplore

Lateral current injection type GaInAsP/InP DFB lasers on SI-InP substrate

2009 IEEE International Conference on Indium Phosphide & Related Materials, 2009, p.178-181

2009

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IEEE_Xplore

GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

Optics express, 2006-09, Vol.14 (18), p.8184-8188

2006

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GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating

Optics express, 2011-01, Vol.19 (3), p.1884-1891

2011

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Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

IEEE photonics technology letters, 2013-07, Vol.25 (13), p.1282-1285

2013

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IEEE_Xplore

Lateral-Current-Injection Distributed Feedback Laser With Surface Grating Structure

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1175-1182

2011

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IEEE_Xplore

Injection-Type GaInAsP-InP-Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate

IEEE photonics technology letters, 2009-03, Vol.21 (5), p.283-285

2009

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IEEE_Xplore

Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4), p.04DG10-04DG10-5

2012

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Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

Japanese Journal of Applied Physics, 2012-04, Vol.51 (4S), p.4

2012

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Electrically-pumped compact hybrid silicon microring lasers for optical interconnects

Optical net gain measurement in n-type doped germanium waveguides under optical pumping for silicon monolithic laser

Influence of n-type doping in germanium crystalline films grown on silicon substrates on room-temperature photoluminescence and optical absorption

Crystallinity improvements of Ge waveguides fabricated by epitaxial lateral overgrowth

Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes

Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits

On-chip optical interconnection using integrated germanium light emitters and photodetectors

Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate

Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding

Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding

Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate

Direct Wafer Bonding of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Substrate

Passive waveguide loss measurements in an InGaN-based laser diode structure

GaInAsP/InP Membrane Lasers for Optical Interconnects

Improvement of photoluminescence from Ge layer with patterned Si3N4 stressors

A Light Source Using 1.3- \mu Lens-Integrated Surface-Emitting Laser for Silicon Platforms

Investigation of bonding strength and photoluminescence properties of InP/Si surface activated bonding

Lateral current injection type GaInAsP/InP DFB lasers on SI-InP substrate

GaInAsP/InP membrane BH-DFB lasers directly bonded on SOI substrate

GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating

Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating

Lateral-Current-Injection Distributed Feedback Laser With Surface Grating Structure

Injection-Type GaInAsP-InP-Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate

Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

Improving Optical Properties of Ge Layers Fabricated by Epitaxial Growth Combined with Ge Condensation

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