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Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.330-336

2020

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Selective introduction of Cu impurity into fine-dispersed ZnS obtained during the process of one-stage synthesis

Nanoscale research letters, 2017-08, Vol.12 (1), p.511-511, Article 511

2017

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Field emission properties of pointed cathodes based on graphene films on SiC

Journal of superhard materials, 2016-07, Vol.38 (4), p.235-240

2016

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Effect of por-SiC buffer layer on the parameters of thin Er2O3 layers on silicon carbide substrates

IOP conference series. Materials Science and Engineering, 2015, Vol.81 (1)

2015

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Principles of creating the devices that are able to control the current flow in the second class conductors

Semiconductor physics, quantum electronics, and optoelectronics, 2022-01, Vol.25 (2), p.137-145

2022

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Metamorphosis of the properties of the gas-phase fraction of ZnS:Mn obtained by the method of self-propagating high-temperature synthesis from the charge with a different Zn/S ratio

Journal of luminescence, 2022-11, Vol.251, p.119184, Article 119184

2022

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Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film

Semiconductor physics, quantum electronics, and optoelectronics, 2015-12, Vol.18 (4), p.452-455

Okhrimenko, O. B.

2015

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Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation

Semiconductor physics, quantum electronics, and optoelectronics, 2024-09, Vol.27 (3), p.274-279

2024

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Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation

Semiconductor physics, quantum electronics, and optoelectronics, 2022-12, Vol.25 (4), p.355-361

2022

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Photoluminescence properties of ZnS:Mn single crystal effected by defect drift in electric and pulsed magnetic fields

Journal of luminescence, 2018-12, Vol.204, p.548-553

2018

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Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC

Semiconductor physics, quantum electronics, and optoelectronics, 2023-09, Vol.26 (3), p.260-269

2023

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A model for non-thermal action of microwave radiation on oxide film/semiconductor structures

Semiconductor physics, quantum electronics, and optoelectronics, 2014-09, Vol.17 (3), p.227-231

Okhrimenko, O.B.

2014

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Nonmonotonic behavior of luminescence characteristics of fine-dispersed self-propagating high-temperature synthesized ZnS:Mn depending on size of its particles

Journal of luminescence, 2018-02, Vol.194, p.8-14

2018

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Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing

Semiconductor physics, quantum electronics, and optoelectronics, 2014-06, Vol.17 (2), p.200-204

Okhrimenko, O.B.

2014

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Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)

Semiconductor physics, quantum electronics, and optoelectronics, 2020-01, Vol.23 (3), p.253-259

2020

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Formation of ZnO films on SiC/porous Si/Si substrates

Semiconductor physics, quantum electronics, and optoelectronics, 2023-01, Vol.26 (2), p.140-146

2023

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The model of potential barrier appearing in a hydrolayer localized in a two-layer porous nanostructure

Semiconductor physics, quantum electronics, and optoelectronics, 2021-01, Vol.24 (3), p.288-294

2021

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Preparation of quaternary compounds Cu2ZnSnS4 by using the self-propagating high-temperature synthesis

Semiconductor physics, quantum electronics, and optoelectronics, 2021-01, Vol.24 (3), p.272-276

2021

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Influence of microwave radiation on relaxation processes in silicon carbide

Semiconductor physics, quantum electronics, and optoelectronics, 2020-01, Vol.23 (2), p.175-179

2020

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Effect of microwave (24GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals

Journal of luminescence, 2016-10, Vol.178, p.68-71

2016

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Characterization of field-emission cathodes based on graphene films on SiC

Semiconductors (Woodbury, N.Y.), 2015-09, Vol.49 (9), p.1242-1245

2015

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The transition layer in TiB2-GaAs and Au-TiB2-GaAs Schottky contacts

Semiconductors (Woodbury, N.Y.), 2001-01, Vol.35 (4), p.427-432

2001

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Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone

Semiconductor physics, quantum electronics, and optoelectronics, 2019-01, Vol.22 (4), p.391-396

Berezhnytska, O.S.

2019

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Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Semiconductor physics, quantum electronics, and optoelectronics, 2017-12, Vol.20 (4), p.465-469

Bacherikov, Yu. Yu

2017

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Characterization of porous silicon carbide according to absorption and photoluminescence spectra

Semiconductors (Woodbury, N.Y.), 2014-08, Vol.48 (8), p.1028-1030

2014

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Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis

Selective introduction of Cu impurity into fine-dispersed ZnS obtained during the process of one-stage synthesis

Field emission properties of pointed cathodes based on graphene films on SiC

Effect of por-SiC buffer layer on the parameters of thin Er2O3 layers on silicon carbide substrates

Principles of creating the devices that are able to control the current flow in the second class conductors

Metamorphosis of the properties of the gas-phase fraction of ZnS:Mn obtained by the method of self-propagating high-temperature synthesis from the charge with a different Zn/S ratio

Phenomenological model of athermal interaction of microwave radiation with the structures wide-gap semiconductor – oxide film

Redistribution of radiative recombination centers in the SiC/por-SiC/Dy2O3 structure under the influence of athermal microwave irradiation

Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation

Photoluminescence properties of ZnS:Mn single crystal effected by defect drift in electric and pulsed magnetic fields

Relationship between oxidation, stresses, morphology, local resistivity, and optical properties of TiO2, Gd2O3, Er2O3, SiO2 thin films on SiC

A model for non-thermal action of microwave radiation on oxide film/semiconductor structures

Nonmonotonic behavior of luminescence characteristics of fine-dispersed self-propagating high-temperature synthesized ZnS:Mn depending on size of its particles

Variation of optical parameters of multilayer structures with thin silicon layers at laser annealing

Comparative characteristics of TiO2(Er2O3, Dy2O3)/por-SiC/SiC heterostructures (Review)

Formation of ZnO films on SiC/porous Si/Si substrates

The model of potential barrier appearing in a hydrolayer localized in a two-layer porous nanostructure

Preparation of quaternary compounds Cu2ZnSnS4 by using the self-propagating high-temperature synthesis

Influence of microwave radiation on relaxation processes in silicon carbide

Effect of microwave (24GHz) radiation treatment on impurity photoluminescence of CdTe:Cl single crystals

Characterization of field-emission cathodes based on graphene films on SiC

The transition layer in TiB2-GaAs and Au-TiB2-GaAs Schottky contacts

Conductivity of molecular semiconductor material based on monomeric and polymeric methacroylacetophenone

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Characterization of porous silicon carbide according to absorption and photoluminescence spectra

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