UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Green analytical method for the simultaneous analysis of cytochrome P450 probe substrates by poly(N-isopropylacrylamide)-based temperature-responsive chromatography

Scientific reports, 2020-06, Vol.10 (1), p.8828-8828, Article 8828

2020

Volltextzugriff (PDF)

3D Ship Hull Design Direct Optimization Using Generative Adversarial Network

Journal of advanced computational intelligence and intelligent informatics, 2024-05, Vol.28 (3), p.693-703

2024

Volltextzugriff (PDF)

High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

Applied physics express, 2024-08, Vol.17 (8), p.86504

2024

Volltextzugriff (PDF)

Oxidation during magma mixing recorded by symplectites at Kusatsu–Shirane Volcano, Central Japan

Earth, planets, and space, 2020-05, Vol.72 (1), p.1-12, Article 68

2020

Volltextzugriff (PDF)

Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures

Physica status solidi. A, Applications and materials science, 2018-04, Vol.215 (8), p.n/a

2018

Volltextzugriff (PDF)

Differential etching behavior between semi-insulating and n-doped 4H-SiC in high-density SF6/O2 inductively coupled plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2009-05, Vol.27 (3), p.456-460

Okamoto, Naoya

2009

Volltextzugriff (PDF)

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGD03

2020

Volltextzugriff (PDF)

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

IEICE transactions on electronics, 2023-11, Vol.E106.C (11), p.661-668, Article 2023MMP0005

2023

Volltextzugriff (PDF)

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Electronics letters, 2023-02, Vol.59 (4), p.n/a

2023

Volltextzugriff (PDF)

Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor–liquid–solid method

Applied physics express, 2018-02, Vol.11 (2), p.25001

2018

Volltextzugriff (PDF)

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

IEICE transactions on electronics, 2023-10, Vol.E106.C (10), p.605-613, Article 2022ECP5046

2023

Volltextzugriff (PDF)

Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

Applied physics express, 2019-10, Vol.12 (10), p.106502

2019

Volltextzugriff (PDF)

High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.965-973

2024

Volltextzugriff (PDF)

Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGH03

2020

Volltextzugriff (PDF)

Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-11, Vol.11 (11), p.1909-1916

2021

Volltextzugriff (PDF)

Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

AIP advances, 2020-08, Vol.10 (8), p.085218-085218-5

2020

Volltextzugriff (PDF)

Periodic sea-level oscillation in Tokyo Bay detected with the Tokyo-Bay seafloor hyper-kilometric submarine deep detector (TS-HKMSDD)

Scientific reports, 2022-04, Vol.12 (1), p.6097-6097, Article 6097

2022

Volltextzugriff (PDF)

Coherent vortices in high resolution direct numerical simulation of homogeneous isotropic turbulence: A wavelet viewpoint

Physics of fluids (1994), 2007-11, Vol.19 (11)

2007

Volltextzugriff (PDF)

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density

Applied physics express, 2021-04, Vol.14 (4), p.41004

2021

Volltextzugriff (PDF)

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Applied physics express, 2021-01, Vol.14 (1), p.16502

2021

Volltextzugriff (PDF)

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

IEICE transactions on electronics, 2021-10, Vol.E104.C (10), p.480-487, Article 2021MMI0001

2021

Volltextzugriff (PDF)

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

IEICE transactions on electronics, 2019-06, Vol.E102.C (6), p.462-465

2019

Volltextzugriff (PDF)

Application of Stochastic Point-Based Rendering to Laser-Scanned Point Clouds of Various Cultural Heritage Objects

International journal of automation technology, 2018-05, Vol.12 (3), p.348-355

2018

Volltextzugriff (PDF)

Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.11NG04-11NG04-4

2013

Volltextzugriff (PDF)

Wavelet-based regularization of the Galerkin truncated three-dimensional incompressible Euler flows

Physical review. E, 2017-12, Vol.96 (6-1), p.063119-063119, Article 063119

2017

Volltextzugriff (PDF)

1 – 25 von 814

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(637)
Mit Volltextzugriff
(686)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(476)
Life Sciences & Biomedicine
(342)
Humans
(205)
Male
(140)
Female
(127)
Physical Sciences
(96)
Oncology
(86)
Middle Aged
(82)
Aged
(79)
Animals
(77)
Technology
(68)
Physics
(60)
Adult
(58)
Mice
(54)
Radiology, Nuclear Medicine & Medical Imaging
(49)
Biological And Medical Sciences
(48)
Biochemistry & Molecular Biology
(44)
Engineering
(41)
Physics, Applied
(39)
Medical Sciences
(38)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)
... seit 90 Tagen
(5)

Menü

Weitere Dienste

Einstellungen

Green analytical method for the simultaneous analysis of cytochrome P450 probe substrates by poly(N-isopropylacrylamide)-based temperature-responsive chromatography

3D Ship Hull Design Direct Optimization Using Generative Adversarial Network

High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

Oxidation during magma mixing recorded by symplectites at Kusatsu–Shirane Volcano, Central Japan

Position‐Controlled VLS Growth of Nanowires on Mask‐Patterned GaAs Substrates for Axial GaAsSb/InAs Heterostructures

Differential etching behavior between semi-insulating and n-doped 4H-SiC in high-density SF6/O2 inductively coupled plasma

Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Demonstration of GaAsSb/InAs nanowire backward diodes grown using position-controlled vapor–liquid–solid method

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

Type-II p-GaAsSb/n-InAs multi-nanowire backward diodes for rectification of low-power RF signals under a zero-bias condition

High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping

Achieving a high breakdown voltage for GaAsSb-based backward diodes using the carrier depletion effect originating from nanowires

Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

Periodic sea-level oscillation in Tokyo Bay detected with the Tokyo-Bay seafloor hyper-kilometric submarine deep detector (TS-HKMSDD)

Coherent vortices in high resolution direct numerical simulation of homogeneous isotropic turbulence: A wavelet viewpoint

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

Application of Stochastic Point-Based Rendering to Laser-Scanned Point Clouds of Various Cultural Heritage Objects

Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors

Wavelet-based regularization of the Galerkin truncated three-dimensional incompressible Euler flows

Suchergebnisse filtern