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Solution-processed intermediate-band solar cells with lead sulfide quantum dots and lead halide perovskites

Nature communications, 2019-01, Vol.10 (1), p.43-43, Article 43

2019

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Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

Applied physics letters, 2008-08, Vol.93 (8), p.083111-083111-3

2008

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Properties of sputter-grown CuGaS2 absorber and CuGaS2/Cd1-xZnxS buffer heterointerface for solar cell application

Thin solid films, 2022-02, Vol.743, p.139063, Article 139063

2022

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Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

Journal of applied physics, 2011-01, Vol.109 (2), p.024301-024301-5

2011

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Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature

Journal of applied physics, 2021-09, Vol.130 (12)

2021

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Two-step excitation induced photovoltaic properties in an InAs quantum dot-in-well intermediate-band solar cell

Journal of applied physics, 2021-02, Vol.129 (7)

2021

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Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1−x/GaAs quantum dots including effects of photoexcited carriers

Journal of applied physics, 2022-10, Vol.132 (13)

2022

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Reducing Shockley–Read–Hall recombination losses in the depletion region of a solar cell by using a wide-gap emitter layer

Journal of applied physics, 2021-10, Vol.130 (15)

2021

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Spectrally resolved intraband transitions on two-step photon absorption in InGaAs/GaAs quantum dot solar cell

Applied physics letters, 2014-08, Vol.105 (7)

2014

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Engineering of sub-band in CuGaS2 thin films via Mo doping by chemical spray pyrolysis route

Thin solid films, 2020-09, Vol.709, p.138252, Article 138252

2020

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Utility of magnetic resonance imaging for differentiating malignant mesenchymal tumors of the uterus from T2-weighted hyperintense leiomyomas

Japanese journal of radiology, 2022-04, Vol.40 (4), p.385-395

2022

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Publisher’s Note: “Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature” [J. Appl. Phys. 130, 124505 (2021)]

Journal of applied physics, 2021-11, Vol.130 (17)

2021

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External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure

Heliyon, 2023-08, Vol.9 (8), p.e19312-e19312, Article e19312

2023

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In-plane coupling effect on absorption coefficients of InAs/GaAs quantum dots arrays for intermediate band solar cell

Progress in photovoltaics, 2015-05, Vol.23 (5), p.546-558

2015

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Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells

Japanese Journal of Applied Physics, 2023-08, Vol.62 (SK), p.SK1008

2023

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Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells

Progress in photovoltaics, 2016-01, Vol.24 (1), p.28-37

2016

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Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell

Journal of applied physics, 2009-07, Vol.106 (2), p.024306-024306-3

2009

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A Study of the Right Colonic Vascular Anatomy: Correlations between Veins and Arteries

Journal of the Anus, Rectum and Colon, 2021/07/29, Vol.5(3), pp.306-312

2021

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Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

AIP advances, 2017-06, Vol.7 (6), p.065305-065305-7

2017

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Ultrafast inverse design of quantum dot optical spectra via a joint TD-DFT learning scheme and deep reinforcement learning

AIP advances, 2022-11, Vol.12 (11), p.115316-115316-9

2022

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Two-photon excitation in an intermediate band solar cell structure

Applied physics letters, 2012-04, Vol.100 (17), p.172111-172111-4

2012

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Co-deposition of MoS2 films by reactive sputtering and formation of tree-like structures

Nanotechnology, 2022-08, Vol.33 (34)

2022

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Identification of surface and volume hot-carrier thermalization mechanisms in ultrathin GaAs layers

Journal of applied physics, 2020-11, Vol.128 (19)

2020

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Improvement of 1.0 eV GaInNAsSb solar cell performance upon optimal annealing

Physica status solidi. A, Applications and materials science, 2017-03, Vol.214 (3), p.n/a

2017

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Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

Progress in photovoltaics, 2016-04, Vol.24 (4), p.533-542

2016

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Solution-processed intermediate-band solar cells with lead sulfide quantum dots and lead halide perovskites

Strain-compensated InAs/GaNAs quantum dots for use in high-efficiency solar cells

Properties of sputter-grown CuGaS2 absorber and CuGaS2/Cd1-xZnxS buffer heterointerface for solar cell application

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature

Two-step excitation induced photovoltaic properties in an InAs quantum dot-in-well intermediate-band solar cell

Dependence of the radiative lifetime on the type-II band offset in GaAsxSb1−x/GaAs quantum dots including effects of photoexcited carriers

Reducing Shockley–Read–Hall recombination losses in the depletion region of a solar cell by using a wide-gap emitter layer

Spectrally resolved intraband transitions on two-step photon absorption in InGaAs/GaAs quantum dot solar cell

Engineering of sub-band in CuGaS2 thin films via Mo doping by chemical spray pyrolysis route

Utility of magnetic resonance imaging for differentiating malignant mesenchymal tumors of the uterus from T2-weighted hyperintense leiomyomas

Publisher’s Note: “Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature” [J. Appl. Phys. 130, 124505 (2021)]

External-quantum-efficiency enhancement in quantum-dot solar cells with a Fabry–Perot light-trapping structure

In-plane coupling effect on absorption coefficients of InAs/GaAs quantum dots arrays for intermediate band solar cell

Effects of carrier-blocking barrier height on two-step photocurrent generation in dilute nitride intermediate band solar cells

Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells

Characteristics of InAs/GaNAs strain-compensated quantum dot solar cell

A Study of the Right Colonic Vascular Anatomy: Correlations between Veins and Arteries

Multi-stacked GaSb/GaAs type-II quantum nanostructures for application to intermediate band solar cells

Ultrafast inverse design of quantum dot optical spectra via a joint TD-DFT learning scheme and deep reinforcement learning

Two-photon excitation in an intermediate band solar cell structure

Co-deposition of MoS2 films by reactive sputtering and formation of tree-like structures

Identification of surface and volume hot-carrier thermalization mechanisms in ultrathin GaAs layers

Improvement of 1.0 eV GaInNAsSb solar cell performance upon optimal annealing

Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells

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