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High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.1145-1150

2019

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Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Micromachines (Basel), 2023-01, Vol.14 (2), p.291

2023

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Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

IEEE electron device letters, 2015-04, Vol.36 (4), p.303-305

2015

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High-speed uni-traveling-carrier photodiodes on silicon nitride

APL photonics, 2023-01, Vol.8 (1), p.016104-016104-6

2023

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Plasmonic Layer as a Localized Temperature Control Element for Surface Plasmonic Resonance-Based Sensors

Sensors (Basel, Switzerland), 2021-03, Vol.21 (6), p.2035

2021

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Bandwidth enhancement in disordered metamaterial absorbers

Applied physics letters, 2014-08, Vol.105 (8)

2014

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Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils

IEEE journal of the Electron Devices Society, 2019-01, Vol.7, p.973-978

2019

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Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3105-3111

2013

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Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances

Applied physics express, 2022-11, Vol.15 (11), p.116504

2022

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A micro-electro-mechanical accelerometer based on gallium nitride on silicon

Applied physics letters, 2023-01, Vol.122 (3)

2023

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A 30.1 mW/µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node

IEEE electron device letters, 2020, Vol.41 (1), p.12-14

2020

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Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

IEEE transactions on microwave theory and techniques, 2022-01, Vol.70 (1), p.444-452

2022

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High power, high PAE Q‐band sub‐10 nm barrier thickness AlN/GaN HEMTs

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8), p.1600797-n/a

2017

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High power, high PAE Q-band sub-10nm barrier thickness AlN/GaN HEMTs

Physica status solidi. A, Applications and materials science, 2017-08, Vol.214 (8)

2017

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Thermoelectric characterization of crystalline nano-patterned silicon membranes

Materials advances, 2024-07, Vol.5 (14), p.5998-66

2024

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High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.285-288

2020

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Development of a Millimeter-Long Travelling Wave THz Photomixer

Journal of lightwave technology, 2021-07, Vol.39 (14), p.4700-4709

2021

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Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Microelectronic engineering, 2023-05, Vol.276, p.111998, Article 111998

2023

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Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Microelectronics and reliability, 2021-08, Vol.123, p.114199, Article 114199

2021

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2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Semiconductor science and technology, 2019-12, Vol.34 (12), p.12

2019

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2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Semiconductor science and technology, 2019-12, Vol.34 (12)

2019

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Design of tunable power detector towards 5G applications

Microwave and optical technology letters, 2021-03, Vol.63 (3), p.823-828

2021

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Large-area femtosecond laser milling of silicon employing trench analysis

Optics and laser technology, 2021-06, Vol.138, p.106866, Article 106866

2021

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Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

IEEE microwave and wireless components letters, 2017-04, Vol.27 (4), p.419-421

2017

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First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

IEEE electron device letters, 2016-05, Vol.37 (5), p.553-555

2016

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High Performance and Highly Robust AlN/GaN HEMTs for Millimeter-Wave Operation

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

High-speed uni-traveling-carrier photodiodes on silicon nitride

Plasmonic Layer as a Localized Temperature Control Element for Surface Plasmonic Resonance-Based Sensors

Bandwidth enhancement in disordered metamaterial absorbers

Thermal Analysis of Ultimately-Thinned-and-Transfer-Bonded CMOS on Mechanically Flexible Foils

Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances

A micro-electro-mechanical accelerometer based on gallium nitride on silicon

A 30.1 mW/µm2 SiGe:C HBT featuring an implanted collector in a 55-nm CMOS node

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

High power, high PAE Q‐band sub‐10 nm barrier thickness AlN/GaN HEMTs

High power, high PAE Q-band sub-10nm barrier thickness AlN/GaN HEMTs

Thermoelectric characterization of crystalline nano-patterned silicon membranes

High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

Development of a Millimeter-Long Travelling Wave THz Photomixer

Performance improvement with non-alloyed ohmic contacts technology on AlGaN/GaN High Electron Mobility Transistors on 6H-SiC substrate

Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

2 W mm−1 power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz

Design of tunable power detector towards 5G applications

Large-area femtosecond laser milling of silicon employing trench analysis

Power Measurement Setup for On-Wafer Large Signal Characterization Up to Q-Band

First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

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