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Characteristics of 4H–SiC MOS interface annealed in N2O

Solid-state electronics, 2005-06, Vol.49 (6), p.896-901

2005

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Electrical characterization of Au/p-ZnSe structure

Japanese Journal of Applied Physics, 1996-12, Vol.35 (12A), p.5995-5997

1996

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Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H 2 Se

Japanese Journal of Applied Physics, 1994-06, Vol.33 (6R), p.3505

1994

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Blue light emitting laser diodes based on ZnSe/ZnCdSe structure grown by gas source molecular beam epitaxy

Japanese Journal of Applied Physics, 1994, Vol.33 (1A), p.L13-L14

1994

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Growth of ZnS and ZnSSe by gas-source molecular beam epitaxy using hydride group VI sources

Journal of crystal growth, 1995-05, Vol.150 (1-4), p.707-711

1995

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Growth of n- and p-ZnSe by gas source molecular beam epitaxy using metal Zn and H2Se

Journal of crystal growth, 1994-03, Vol.136 (1-4), p.366-370

1994

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Active-nitrogen-doped p-type ZnSe grown by gas-source molecular beam epitaxy for blue-light-emitting devices

Japanese Journal of Applied Physics, 1993-12, Vol.32 (12A), p.L1725-L1727

1993

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Role of carbon and hydrogen in reactive ion etching of InP by gas mixture of ethane and hydrogen

Japanese Journal of Applied Physics, 1993-10, Vol.32 (10), p.4430-4435

1993

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SPECULAR SURFACE MORPHOLOGY OF ALUMINUM-IMPLANTED 4H-SiC(000-1) BY SiH4-ADDED Ar ANNEAL

Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 1, pp. 115-116. 2004, 2004-01, Vol.43 (1), p.115-116

2004

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Open-tube Zn diffusion method for InGaAsP/InP heterojunction bipolar transistors

Japanese Journal of Applied Physics, 1990-02, Vol.29 (2), p.L213-L216

1990

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Diffusion mechanism of Cd in InP and InGaAs

Japanese Journal of Applied Physics, 1988-02, Vol.27 (2), p.253-259

1988

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Fe and Al concentrations in high resistivity InP layer grown by low-temperature liquid phase epitaxy

Japanese Journal of Applied Physics, 1991-02, Vol.30 (2), p.218-220

1991

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1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

Applied physics letters, 1990-04, Vol.56 (17), p.1641-1642

1990

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A new, simple arrangement for conoscopic figures

Japanese Journal of Applied Physics, 1984-01, Vol.23 (11), p.1541-1542

1984

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Gas-source molecular beam epitaxy of MgZnSSe for fabricating blue/green laser diodes

Journal of crystal growth, 1996-11, Vol.169 (2), p.293-298

1996

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Diffusion Profiles of Cd in InP

Japanese Journal of Applied Physics, 1982-01, Vol.21 (8R), p.1170

1982

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Simple polarization shearing interferometry for a microscope

Applied Optics, 1988-03, Vol.27 (6), p.1179

Ohtsuka, Ken-ichi

1988

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Crystalline defects in ZnSe layers grown by gas source molecular beam epitaxy

Journal of crystal growth, 1995-09, Vol.154 (1), p.41-46

1995

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Reactive ion etching on InP using C2H6/H2/O2

Journal of applied physics, 1992-10, Vol.72 (7), p.3125-3128

1992

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Photoluminescence Measurements for Cd-Diffused InP p-n Junction

Japanese Journal of Applied Physics, 1981, Vol.20 (6), p.1113

1981

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Gas source molecular beam epitaxial growth of ZnSe using metal Zn and H2Se

Japanese journal of applied physics, 1994, Vol.33 (6A), p.3505-3509

1994

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Successful enhancement of lifetime for SiO2 on 4H-SiC by N2O anneal

IEEE electron device letters, 2004-11, Vol.25 (11), p.734-736

2004

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Reactive Ion Etching of III-V Compound Semiconductors using Mixture of Ethane and Hydrogen

Shinku, 1989/11/20, Vol.32(11), pp.801-807

1989

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A comment on the growth unit of Rochelle salt crystal growing in its aqueous solution

Journal of crystal growth, 1982, Vol.56 (1), p.151-156

1982

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Effects of N20 Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Materials Science Forum, 2005-01, Vol.483-485, p.697-700

2005

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Characteristics of 4H–SiC MOS interface annealed in N2O

Electrical characterization of Au/p-ZnSe structure

Gas Source Molecular Beam Epitaxial Growth of ZnSe Using Metal Zn and H 2 Se

Blue light emitting laser diodes based on ZnSe/ZnCdSe structure grown by gas source molecular beam epitaxy

Growth of ZnS and ZnSSe by gas-source molecular beam epitaxy using hydride group VI sources

Growth of n- and p-ZnSe by gas source molecular beam epitaxy using metal Zn and H2Se

Active-nitrogen-doped p-type ZnSe grown by gas-source molecular beam epitaxy for blue-light-emitting devices

Role of carbon and hydrogen in reactive ion etching of InP by gas mixture of ethane and hydrogen

SPECULAR SURFACE MORPHOLOGY OF ALUMINUM-IMPLANTED 4H-SiC(000-1) BY SiH4-ADDED Ar ANNEAL

Open-tube Zn diffusion method for InGaAsP/InP heterojunction bipolar transistors

Diffusion mechanism of Cd in InP and InGaAs

Fe and Al concentrations in high resistivity InP layer grown by low-temperature liquid phase epitaxy

1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

A new, simple arrangement for conoscopic figures

Gas-source molecular beam epitaxy of MgZnSSe for fabricating blue/green laser diodes

Diffusion Profiles of Cd in InP

Simple polarization shearing interferometry for a microscope

Crystalline defects in ZnSe layers grown by gas source molecular beam epitaxy

Reactive ion etching on InP using C2H6/H2/O2

Photoluminescence Measurements for Cd-Diffused InP p-n Junction

Gas source molecular beam epitaxial growth of ZnSe using metal Zn and H2Se

Successful enhancement of lifetime for SiO2 on 4H-SiC by N2O anneal

Reactive Ion Etching of III-V Compound Semiconductors using Mixture of Ethane and Hydrogen

A comment on the growth unit of Rochelle salt crystal growing in its aqueous solution

Effects of N20 Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

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