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Dataset on electrical single-family house and heat pump load profiles in Germany

Scientific data, 2022-02, Vol.9 (1), p.56-11, Article 56

2022

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Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Solar energy materials and solar cells, 2014-12, Vol.131, p.85-91

2014

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Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

IEEE journal of photovoltaics, 2015-03, Vol.5 (2), p.507-514

2015

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Aluminum-oxide-based inversion layer solar cells on n -type crystalline silicon: Fundamental properties and efficiency potential

Journal of applied physics, 2014-02, Vol.115 (7)

2014

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A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

Journal of applied physics, 2014-01, Vol.115 (4)

2014

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Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?

Solar energy materials and solar cells, 2014-01, Vol.120, p.436-440

2014

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Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters

IEEE journal of photovoltaics, 2015-01, Vol.5 (1), p.166-173

2015

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The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon

Journal of applied physics, 2012-03, Vol.111 (5), p.054508-054508-12

2012

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Charakterisierungsmethoden und simulationsgestützte analysen von silizium solarzellen

Ohrdes, Tobias

2015

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Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes

Semiconductor science and technology, 2010-05, Vol.25 (5), p.055001-055001

2010

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Recombination behavior and contact resistance of n super(+) and p super(+) poly-crystalline Si/mono-crystalline Si junctions

Solar energy materials and solar cells, 2014-02, Vol.131, p.85-91

2014

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Injection dependence of the effective lifetime of n-type Si passivated by Al sub(2)O sub(3): An edge effect?

Solar energy materials and solar cells, 2014-01, Vol.120, p.436-440

2014

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Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells

Physica status solidi. A, Applications and materials science, 2015-02, Vol.212 (2), p.291-297

2015

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Conceptual Comparison between Standard Si Solar Cells and back Contacted Cells

Energy procedia, 2014, Vol.55, p.11-16

2014

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19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations

IEEE transactions on electron devices, 2012-04, Vol.59 (4), p.909-917

2012

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Structural analysis of textured silicon surfaces after ion implantation under tilted angle

Semiconductor science and technology, 2014-09, Vol.29 (9), p.95004

2014

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Influence of the boron emitter profile on V sub(OC) and J sub(SC) losses in fully ion implanted n-type PERT solar cells

Physica status solidi. A, Applications and materials science, 2015-02, Vol.212 (2), p.291-297

2015

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Influence of the boron emitter profile on V OC and J SC losses in fully ion implanted n-type PERT solar cells: V OC and J SC losses in fully ion implanted n-type PERT solar cells

Physica status solidi. A, Applications and materials science, 2015-02, Vol.212 (2), p.291-297

2015

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Emitter recombination current densities of boron emitters with silver/aluminum pastes

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.2808-2812

2014

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Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr 3 diffusion processes

Semiconductor science and technology, 2010-05, Vol.25 (5), p.55001

2010

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Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC), 2014, p.0852-0856

2014

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Reverse Saturation Current Density Imaging of Highly Doped Regions in Silicon Employing Photoluminescence Measurements

IEEE journal of photovoltaics, 2012-10, Vol.2 (4), p.473-478

2012

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Counterdoping with patterned ion implantation

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.1280-1284

2013

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Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes

2009 34th IEEE Photovoltaic Specialists Conference (PVSC), 2009, p.001556-001561

2009

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Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.0896-0899

2013

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Dataset on electrical single-family house and heat pump load profiles in Germany

Recombination behavior and contact resistance of n+ and p+ poly-crystalline Si/mono-crystalline Si junctions

Ion Implantation for Poly-Si Passivated Back-Junction Back-Contacted Solar Cells

Aluminum-oxide-based inversion layer solar cells on n -type crystalline silicon: Fundamental properties and efficiency potential

A numerical simulation study of gallium-phosphide/silicon heterojunction passivated emitter and rear solar cells

Injection dependence of the effective lifetime of n-type Si passivated by Al2O3: An edge effect?

Electrical and Structural Analysis of Crystal Defects After High-Temperature Rapid Thermal Annealing of Highly Boron Ion-Implanted Emitters

The effect of sample edge recombination on the averaged injection-dependent carrier lifetime in silicon

Charakterisierungsmethoden und simulationsgestützte analysen von silizium solarzellen

Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr3 diffusion processes

Recombination behavior and contact resistance of n super(+) and p super(+) poly-crystalline Si/mono-crystalline Si junctions

Injection dependence of the effective lifetime of n-type Si passivated by Al sub(2)O sub(3): An edge effect?

Influence of the boron emitter profile on VOC and JSC losses in fully ion implanted n-type PERT solar cells

Conceptual Comparison between Standard Si Solar Cells and back Contacted Cells

19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon: A Loss Analysis by Means of Three-Dimensional Simulations

Structural analysis of textured silicon surfaces after ion implantation under tilted angle

Influence of the boron emitter profile on V sub(OC) and J sub(SC) losses in fully ion implanted n-type PERT solar cells

Influence of the boron emitter profile on V OC and J SC losses in fully ion implanted n-type PERT solar cells: V OC and J SC losses in fully ion implanted n-type PERT solar cells

Emitter recombination current densities of boron emitters with silver/aluminum pastes

Charge carrier lifetime degradation in Cz silicon through the formation of a boron-rich layer during BBr 3 diffusion processes

Building blocks for back-junction back-contacted cells and modules with ion-implanted poly-Si junctions

Reverse Saturation Current Density Imaging of Highly Doped Regions in Silicon Employing Photoluminescence Measurements

Counterdoping with patterned ion implantation

Characterisation and implications of the boron rich layer resulting from open-tube liquid source BBR3 boron diffusion processes

Overcoming phosphorus emitter limitations in PERC Si solar cells by using a gallium-phosphide heteroemitter

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