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Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

Journal of crystal growth, 2017-11, Vol.477, p.230-234

2017

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Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

Applied physics letters, 2013-07, Vol.103 (5)

2013

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Photonic crystal and quantum dot technologies for all-optical switch and logic device

New journal of physics, 2006-09, Vol.8 (9), p.208-208

2006

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Mode identification of high-quality-factor single-defect nanocavities in quantum dot-embedded photonic crystals

Journal of applied physics, 2007-04, Vol.101 (7)

2007

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Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source

Journal of crystal growth, 2013-09, Vol.378, p.549-552

2013

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Electrically Driven Near-Infrared Broadband Light Source with Gaussian-Like Spectral Shape Based on Multiple InAs Quantum Dots

IEICE transactions on electronics, 2016-03, Vol.E99.C (3), p.381-384

2016

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Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing

Japanese Journal of Applied Physics, 2013-12, Vol.52 (12), p.125001-125001-8

2013

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Acceleration and suppression of photoemission of GaAs quantum dots embedded in photonic crystal microcavities

Applied physics letters, 2008-09, Vol.93 (11), p.111103-111103-3

2008

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Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

Nanomaterials and nanotechnology, 2014-09, Vol.4, p.1

2014

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Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot–Nanocavity System

Applied physics express, 2009-12, Vol.2 (12), p.122301

2009

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Integration of emission-wavelength-controlled InAs quantum dots for ultrabroadband near-infrared light source

Nanomaterials and nanotechnology, 2014, Vol.4 (Godište 2014), p.1

2014

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Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas

IEICE transactions on electronics, 2012, Vol.E95-C (2), p.247-250

2012

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Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask

Japanese Journal of Applied Physics, 2009-06, Vol.48 (6R), p.65502

2009

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In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

Review of scientific instruments, 2007-07, Vol.78 (7), p.073908-073908-5

2007

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Selective growth of high quality InAs quantum dots in narrow regions using in situ mask

Journal of crystal growth, 2006-07, Vol.293 (1), p.57-61

2006

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Effects of growth temperature of partial GaAs cap on InAs quantum dots in In-flush process for single dot spectroscopy

Physica status solidi. C, 2011-02, Vol.8 (2), p.248-250

2011

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InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5777

2005

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Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics

IEICE transactions on electronics, 2012, Vol.E95-C (2), p.178-187

2012

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Emission wavelength control of InAs/GaAs quantum dots using an As 2 source for near-infrared broadband light source applications

Applied physics express, 2021-05, Vol.14 (5), p.55501

2021

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InAs island formation aligned along the steps on a GaAs(001) vicinal surface

Japanese Journal of Applied Physics, 1995-06, Vol.34 (6B), p.L724-L726

1995

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Growth of quantum three-dimensional structure of InGaAs emitting at ~1µm applicable for a broadband near-infrared light source

Journal of crystal growth, 2017-11, Vol.477, p.230-234

2017

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Cross-sectional scanning tunneling microscopy observation of atomic arrangement in triple period-A type ordered AlInAs alloy

Applied surface science, 2005-02, Vol.241 (1), p.9-13

2005

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Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source

Journal of crystal growth, 2013-09, Vol.378, p.501-505

2013

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Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask

Japanese Journal of Applied Physics, 2005-07, Vol.44 (7S), p.5677

2005

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Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100 nm on Artificially Prepared Nanoholes

Japanese Journal of Applied Physics, 2004-03, Vol.43 (No. 3A), p.L362-L364

2004

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Growth of quantum three-dimensional structure of InGaAs emitting at ~1 µm applicable for a broadband near-infrared light source

Monolithically grown multi-color InAs quantum dots as a spectral-shape-controllable near-infrared broadband light source

Photonic crystal and quantum dot technologies for all-optical switch and logic device

Mode identification of high-quality-factor single-defect nanocavities in quantum dot-embedded photonic crystals

Shape evolution of low density InAs quantum dots in the partial capping process by using As2 source

Electrically Driven Near-Infrared Broadband Light Source with Gaussian-Like Spectral Shape Based on Multiple InAs Quantum Dots

Enhancement of Valence Band Mixing in Individual InAs/GaAs Quantum Dots by Rapid Thermal Annealing

Acceleration and suppression of photoemission of GaAs quantum dots embedded in photonic crystal microcavities

Integration of Emission-Wavelength-Controlled InAs Quantum Dots for Ultra-Broadband Near-Infrared Light Source

Investigation of the Spectral Triplet in Strongly Coupled Quantum Dot–Nanocavity System

Integration of emission-wavelength-controlled InAs quantum dots for ultrabroadband near-infrared light source

Broadband Light Source Based on Four-Color Self-Assembled InAs Quantum Dot Ensembles Monolithically Grown in Selective Areas

Monolithic Fabrication of Two-Color InAs Quantum Dots for Integrated Optical Devices by Using a Rotational Metal Mask

In situ mask designed for selective growth of InAs quantum dots in narrow regions developed for molecular beam epitaxy system

Selective growth of high quality InAs quantum dots in narrow regions using in situ mask

Effects of growth temperature of partial GaAs cap on InAs quantum dots in In-flush process for single dot spectroscopy

InAs Nano-Dot Array Formation Using Nano-Jet Probe for Photonics Applications

Nanophotonics Based on Semiconductor-Photonic Crystal/Quantum Dot and Metal-/Semiconductor-Plasmonics

Emission wavelength control of InAs/GaAs quantum dots using an As 2 source for near-infrared broadband light source applications

InAs island formation aligned along the steps on a GaAs(001) vicinal surface

Growth of quantum three-dimensional structure of InGaAs emitting at ~1µm applicable for a broadband near-infrared light source

Cross-sectional scanning tunneling microscopy observation of atomic arrangement in triple period-A type ordered AlInAs alloy

Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light source

Control of InAs Quantum Dot Emission Wavelengths in Narrow Regions by Selective Formation of GaInAs Covered Layers Grown with in situ Mask

Two-Dimensional InGaAs Quantum-Dot Arrays with Periods of 70-100 nm on Artificially Prepared Nanoholes

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