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High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

Applied physics express, 2024-08, Vol.17 (8), p.86504

2024

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Functional remodeling of intraperitoneal macrophages by oncolytic adenovirus restores anti-tumor immunity for peritoneal metastasis of gastric cancer

Molecular Therapy Oncology, 2024-06, Vol.32 (2), p.200806-200806, Article 200806

2024

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Genome-wide assessment of genetic risk loci for childhood acute lymphoblastic leukemia in Japanese patients

Haematologica (Roma), 2024-04, Vol.109 (4), p.1247

2024

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31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiN x Passivation

IEEE electron device letters, 2024-03, Vol.45 (3), p.324-327

2024

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31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation

IEEE electron device letters, 2024-03, Vol.45 (3), p.324-327

2024

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High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

IEICE transactions on electronics, 2023-11, Vol.E106.C (11), p.661-668, Article 2023MMP0005

2023

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Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

IEICE transactions on electronics, 2023-10, Vol.E106.C (10), p.605-613, Article 2022ECP5046

2023

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Effect of oxidant sources on carbon-related impurities in ALD-Al 2 O 3 for solid-state devices

Applied physics express, 2023-09, Vol.16 (9), p.91001

2023

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High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Electronics letters, 2023-02, Vol.59 (4), p.n/a

2023

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24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.101-106

2023

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Effect of ionomer swelling and capillary condensation of water on porous characteristics in cathode catalyst layers of polymer electrolyte membrane fuel cells under humidified conditions

International journal of heat and mass transfer, 2023-01, Vol.200, p.123491, Article 123491

2023

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24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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A Waveguide Antenna Array Module with Controlled Element Pitch < 1λ for Sub-THz Communications

2023 IEEE Conference on Antenna Measurements and Applications (CAMA), 2023, p.281-284

2023

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High-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs

2022 Asia-Pacific Microwave Conference (APMC), 2022, p.276-278

2022

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Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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Improved f T /f max in wide bias range by steam-annealed ultrathin-Al 2 O 3 gate dielectrics for InP-based high-electron-mobility transistors

Applied physics express, 2022-04, Vol.15 (4), p.41001

2022

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Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (7)

2022

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Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (7), p.n/a

2022

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GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process

Applied physics express, 2022-03, Vol.15 (3), p.36501

2022

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Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-11, Vol.11 (11), p.1909-1916

2021

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Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

IEICE transactions on electronics, 2021-10, Vol.E104.C (10), p.480-487, Article 2021MMI0001

2021

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First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density

Applied physics express, 2021-04, Vol.14 (4), p.41004

2021

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A 0.6-2.1-GHz Wideband GaN High-Power Amplifier Using Transmission-Line-Transformer-Based Differential-Mode Combiner With Second-Harmonic Suppression

IEEE transactions on microwave theory and techniques, 2021-03, Vol.69 (3), p.1675-1683

2021

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Current status of high-power GaN HEMTs and future prospects on AlN-based devices

2021 IEEE International Meeting for Future Electron Devices, Kansai (IMFEDK), 2021, p.1-3

2021

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Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

Applied physics express, 2021-01, Vol.14 (1), p.16502

2021

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High-power and efficiency W-band InAlGaN/AlN/GaN high-electron-mobility transistors for future high-capacity wireless communications

Functional remodeling of intraperitoneal macrophages by oncolytic adenovirus restores anti-tumor immunity for peritoneal metastasis of gastric cancer

Genome-wide assessment of genetic risk loci for childhood acute lymphoblastic leukemia in Japanese patients

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiN x Passivation

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation

High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

Uniform/Selective Heating Microwave Oven Using High Efficiency GaN-on-GaN HEMT Power Amplifier

Effect of oxidant sources on carbon-related impurities in ALD-Al 2 O 3 for solid-state devices

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer

Effect of ionomer swelling and capillary condensation of water on porous characteristics in cathode catalyst layers of polymer electrolyte membrane fuel cells under humidified conditions

24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer

A Waveguide Antenna Array Module with Controlled Element Pitch < 1λ for Sub-THz Communications

High-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

Improved f T /f max in wide bias range by steam-annealed ultrathin-Al 2 O 3 gate dielectrics for InP-based high-electron-mobility transistors

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment

GaN MMICs on a diamond heat spreader with through-substrate vias fabricated by deep dry etching process

Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

Recent Progress on High Output Power, High Frequency and Wide Bandwidth GaN Power Amplifiers

First demonstration of X-band AlGaN/GaN high electron mobility transistors using free-standing AlN substrate over 15 W mm −1 output power density

A 0.6-2.1-GHz Wideband GaN High-Power Amplifier Using Transmission-Line-Transformer-Based Differential-Mode Combiner With Second-Harmonic Suppression

Current status of high-power GaN HEMTs and future prospects on AlN-based devices

Over 80% power-added-efficiency GaN high-electron-mobility transistors on free-standing GaN substrates

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