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Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

Japanese Journal of Applied Physics, 2020-04, Vol.59 (SG), p.SGGD03

2020

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High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Electronics letters, 2023-02, Vol.59 (4), p.n/a

2023

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Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

IEEE transactions on components, packaging, and manufacturing technology (2011), 2021-11, Vol.11 (11), p.1909-1916

2021

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IEEE_Xplore

High performance and high reliability AlGaN/GaN HEMTs

Physica status solidi. A, Applications and materials science, 2009-06, Vol.206 (6), p.1135-1144

2009

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24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer

IEEE journal of the Electron Devices Society, 2023-01, Vol.11, p.1-1

2023

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Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors

Japanese Journal of Applied Physics, 2013-11, Vol.52 (11), p.11NG04-11NG04-4

2013

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Warming effect on miriplatin-lipiodol suspension for potential use as a chemotherapeutic agent for transarterial chemoembolization of hepatocellular carcinoma: In vitro study

Hepatology research, 2013-10, Vol.43 (10), p.1100-1104

2013

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Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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IEEE_Xplore

A 0.6-2.1-GHz Wideband GaN High-Power Amplifier Using Transmission-Line-Transformer-Based Differential-Mode Combiner With Second-Harmonic Suppression

IEEE transactions on microwave theory and techniques, 2021-03, Vol.69 (3), p.1675-1683

2021

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IEEE_Xplore

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

IEEE electron device letters, 2019-02, Vol.40 (2), p.287-290

2019

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IEEE_Xplore

GaN single-chip transceiver frontend MMIC for X-band applications

2012 IEEE/MTT-S International Microwave Symposium Digest, 2012, p.1-3

2012

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IEEE_Xplore

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation

IEEE electron device letters, 2024-03, Vol.45 (3), p.324-327

2024

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IEEE_Xplore

31 W/mm at 8 GHz in InAlGaN/GaN HEMT with thermal CVD SiN x passivation

IEEE electron device letters, 2024, p.1-1

2024

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Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics

IEEE electron device letters, 2010-03, Vol.31 (3), p.189-191

2010

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IEEE_Xplore

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (7), p.n/a

2022

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Suppression of current collapse for millimeter-wave GaN-HEMTs

Physica status solidi. C, 2010-10, Vol.7 (10), p.2429-2432

2010

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Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment

Physica status solidi. A, Applications and materials science, 2022-04, Vol.219 (7)

2022

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Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4), p.04DF01-04DF01-8

2010

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Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2020-12, Vol.38 (6)

2020

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Reliability of GaN HEMTs: current status and future technology

2009 IEEE International Reliability Physics Symposium, 2009, p.61-70

2009

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IEEE_Xplore

High-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs

2022 Asia-Pacific Microwave Conference (APMC), 2022, p.276-278

2022

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24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer

IEEE journal of the Electron Devices Society, 2023, Vol.11, p.101-106

2023

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An over 230 W, 0.5-2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique

2020 IEEE/MTT-S International Microwave Symposium (IMS), 2020, p.25-28

2020

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IEEE_Xplore

Surface-oxide-controlled InAlN/GaN MOS-HEMTs with water vapor

Physica status solidi. A, Applications and materials science, 2016-05, Vol.213 (5), p.1259-1262

2016

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Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

Japanese Journal of Applied Physics, 2020-04, Vol.59 (4)

2020

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Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs

High‐power‐density InAlGaN/GaN HEMT using InGaN back barrier for W‐band amplifiers

Thermal Design of GaN-on-GaN HEMT Power Amplifier for a Selective Heating Microwave Oven

High performance and high reliability AlGaN/GaN HEMTs

24.4 W/mm X band GaN HEMTs on AlN substrates with the LPCVD grown high breakdown field SiNx layer

Effect of Atomic-Layer-Deposition Method on Threshold Voltage Shift in AlGaN/GaN Metal--Insulator--Semiconductor High Electron Mobility Transistors

Warming effect on miriplatin-lipiodol suspension for potential use as a chemotherapeutic agent for transarterial chemoembolization of hepatocellular carcinoma: In vitro study

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

A 0.6-2.1-GHz Wideband GaN High-Power Amplifier Using Transmission-Line-Transformer-Based Differential-Mode Combiner With Second-Harmonic Suppression

An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

GaN single-chip transceiver frontend MMIC for X-band applications

31 W/mm at 8 GHz in InAlGaN/GaN HEMT With Thermal CVD SiNx Passivation

31 W/mm at 8 GHz in InAlGaN/GaN HEMT with thermal CVD SiN x passivation

Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al2O3‐Based Insulated‐Gate Structures with H2O Vapor Pretreatment

Suppression of current collapse for millimeter-wave GaN-HEMTs

Surface‐Oxide‐Controlled InAlGaN/GaN High‐Electron‐Mobility Transistors Using Al 2 O 3 ‐Based Insulated‐Gate Structures with H 2 O Vapor Pretreatment

Picosecond Pulse Generators in InP-Based High Electron Mobility Transistor Technology for 10 Gbps Wireless Communication

Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma

Reliability of GaN HEMTs: current status and future technology

High-Efficiency 250-320 GHz Power Amplifiers Using InP-based MOS-HEMTs

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN x Layer

An over 230 W, 0.5-2.1 GHz Wideband GaN Power Amplifier using Transmission-Line-Transformer-Based Combining Technique

Surface-oxide-controlled InAlN/GaN MOS-HEMTs with water vapor

Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

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