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Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

Applied physics letters, 2011-06, Vol.98 (25)

2011

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MOCVD growth of vertically aligned InGaN nanowires

Journal of crystal growth, 2013-05, Vol.370, p.311-313

2013

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Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster

Applied physics letters, 2009-09, Vol.95 (11), p.111112-111112-3

2009

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GaN-Based Light-Emitting Diodes on Micro-Lens Patterned Sapphire Substrate

Japanese Journal of Applied Physics, 2008-07, Vol.47 (7R), p.5333

2008

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Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

Thin solid films, 2011-02, Vol.519 (8), p.2398-2401

2011

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Improved Strain-Free GaN Growth with a Nearly Lattice-Matched AlInN Interlayer by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 2010-11, Vol.49 (11), p.111001-111001-5, Article 111001

2010

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Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition

Journal of alloys and compounds, 2011-02, Vol.509 (6), p.2952-2956

2011

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Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate

Physica status solidi. C, 2009-02, Vol.6 (2), p.589-592

2009

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Submicro-electroluminescence spectroscopy of dodecagonal micropit-arranged blue light-emitting diodes

Journal of physics. D, Applied physics, 2011-12, Vol.44 (50), p.505102-1-5

2011

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Structural and Optical Properties of In-Rich InAlGaN/InGaN Heterostructures for White Light Emission

Japanese Journal of Applied Physics, 2008-06, Vol.47 (6R), p.4413

2008

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Epitaxial growth of improved GaN epilayer on sapphire substrate with platinum nanocluster

Journal of crystal growth, 2009-04, Vol.311 (9), p.2655-2658

2009

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Growth and properties of Al-rich InxAl1−xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

Journal of physics. D, Applied physics, 2008-05, Vol.41 (9), p.095402-095402 (5)

2008

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MOCVD growth of vertically aligned InGaN nanowires

Journal of crystal growth, 2013-05, Vol.370 (C)

2013

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Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate

Optics express, 2011-05, Vol.19 (10), p.9385-9391

2011

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Enhanced Light Output Power of GaN Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12), p.125103-125103-4

2011

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Graphene network on indium tin oxide nanodot nodes for transparentand current spreading electrode in InGaN/GaN light emitting diode

Applied physics letters, 2011-06, Vol.98 (25), p.251114-251114-3

2011

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Enhanced Light Extraction in GaN-Based Light-Emitting Diodes with Holographically Fabricated Concave Hemisphere-Shaped Patterning on Indium--Tin-Oxide Layer

Japanese Journal of Applied Physics, 2010-09, Vol.49 (9), p.092101-092101-3

2010

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Enhanced Light Output Power of GaN Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode

Japanese Journal of Applied Physics, 2011-12, Vol.50 (12R), p.125103

2011

Volltextzugriff (PDF)

Growth and properties of Al-rich In x Al 1− x N ternary alloy grown on GaN template by metalorganic chemical vapour deposition

Journal of physics. D, Applied physics, 2008-05, Vol.41 (9), p.95402

2008

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Large bandgap bowing of InxGa1-xN films and growth of blue/green InxGa1-xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

Physica status solidi. C, 2006-06, Vol.3 (6), p.1412-1415

2006

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Large-Bandgap Bowing of InxAl1-xN Ternary Films Grown by Using Metalorganic Chemical Vapor Deposition

Journal of the Korean Physical Society, 2008, 53(4), , pp.1956-1960

2008

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Optical properties of InGaN/GaN MQW microdisk arrays on GaN/Si(111) template

Physica status solidi. C, 2008-05, Vol.5 (6), p.2063-2065

2008

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Large bandgap bowing of In x Ga 1–x N films and growth of blue/green In x Ga 1–x N/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

Physica status solidi. C, 2006-06, Vol.3 (6), p.1412-1415

2006

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Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si (111) Substrate with Various Filling Ratios

Journal of the Korean Physical Society, 2006, 49(III), , pp.745-749

2006

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Growth and Properties of Blue/Green InGaN/GaN MQWs on Si(111) Substrates

Journal of the Korean Physical Society, 2005, 47(3), , pp.512-516

2005

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Graphene network on indium tin oxide nanodot nodes for transparent and current spreading electrode in InGaN/GaN light emitting diode

MOCVD growth of vertically aligned InGaN nanowires

Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster

GaN-Based Light-Emitting Diodes on Micro-Lens Patterned Sapphire Substrate

Defect structure originating from threading dislocations within the GaN film grown on a convex patterned sapphire substrate

Improved Strain-Free GaN Growth with a Nearly Lattice-Matched AlInN Interlayer by Metalorganic Chemical Vapor Deposition

Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition

Characteristics of GaN-based light emitting diode grown on circular convex patterned sapphire substrate

Submicro-electroluminescence spectroscopy of dodecagonal micropit-arranged blue light-emitting diodes

Structural and Optical Properties of In-Rich InAlGaN/InGaN Heterostructures for White Light Emission

Epitaxial growth of improved GaN epilayer on sapphire substrate with platinum nanocluster

Growth and properties of Al-rich InxAl1−xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition

MOCVD growth of vertically aligned InGaN nanowires

Light outcoupling effect in GaN light-emitting diodes via convex microstructures monolithically fabricated on sapphire substrate

Enhanced Light Output Power of GaN Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode

Graphene network on indium tin oxide nanodot nodes for transparentand current spreading electrode in InGaN/GaN light emitting diode

Enhanced Light Extraction in GaN-Based Light-Emitting Diodes with Holographically Fabricated Concave Hemisphere-Shaped Patterning on Indium--Tin-Oxide Layer

Enhanced Light Output Power of GaN Light-Emitting Diodes with Graphene Film as a Transparent Conducting Electrode

Growth and properties of Al-rich In x Al 1− x N ternary alloy grown on GaN template by metalorganic chemical vapour deposition

Large bandgap bowing of InxGa1-xN films and growth of blue/green InxGa1-xN/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

Large-Bandgap Bowing of InxAl1-xN Ternary Films Grown by Using Metalorganic Chemical Vapor Deposition

Optical properties of InGaN/GaN MQW microdisk arrays on GaN/Si(111) template

Large bandgap bowing of In x Ga 1–x N films and growth of blue/green In x Ga 1–x N/GaN MQWs on highly tensile strained GaN/Si(111) hetero structures

Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si (111) Substrate with Various Filling Ratios

Growth and Properties of Blue/Green InGaN/GaN MQWs on Si(111) Substrates

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