UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

IEEE transactions on electron devices, 2014-08, Vol.61 (8), p.2619-2627

2014

Volltextzugriff (PDF)

Novel silicon surface passivation by Al2O3/ZnO/Al2O3 films deposited by thermal atomic layer deposition

Japanese Journal of Applied Physics, 2014-03, Vol.53 (4S)

2014

Volltextzugriff (PDF)

Blistering Induced Degradation of Thermal Stability Al₂O₃ Passivation Layer in Crystal Si Solar Cells

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14(1), 55, pp.53-60

2014

Volltextzugriff (PDF)

Process Temperature Dependence of Al₂O₃ Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(6), 54, pp.581-588

2013

Volltextzugriff (PDF)

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(3), 51, pp.252-258

2013

Volltextzugriff (PDF)

A Novel Atomic Layer Deposited Al₂O₃ Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2014, 14(1), 55, pp.40-47

2014

Volltextzugriff (PDF)

Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S3), p.8-1-08NE05-5

2014

Volltextzugriff (PDF)

Effect of surface pretreatment in the thermal atomic layer deposition of Al2O3 for passivation of crystal Si solar cells

Japanese Journal of Applied Physics, 2014-07, Vol.53 (8S1)

2014

Volltextzugriff (PDF)

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

Journal of semiconductor technology and science, 2013, Vol.13 (3), p.252-258

2013

Volltextzugriff (PDF)

Blistering Induced Degradation of Thermal Stability Al 2 O 3 Passivation Layer in Crystal Si Solar Cells

Journal of semiconductor technology and science, 2014, Vol.14 (1), p.53-60

2014

Volltextzugriff (PDF)

A Novel Atomic Layer Deposited Al 2 O 3 Film with Diluted NH 4 OH for High-Efficient c-Si Solar Cell

Journal of semiconductor technology and science, 2014, Vol.14 (1), p.40-47

2014

Volltextzugriff (PDF)

Process Temperature Dependence of Al 2 O 3 Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

Journal of semiconductor technology and science, 2013, Vol.13 (6), p.581-588

2013

Volltextzugriff (PDF)

Effect of surface pretreatment in the thermal atomic layer deposition of Al 2 O 3 for passivation of crystal Si solar cells

Japanese Journal of Applied Physics, 2014-08, Vol.53 (8S1), p.8

2014

Volltextzugriff (PDF)

Effect of surface pretreatment in the thermal atomic layer deposition of Al sub(2)O sub(3) for passivation of crystal Si solar cells

Japanese Journal of Applied Physics, 2014-01, Vol.53 (8S1), p.08LC04-1-08LC04-4

2014

Volltextzugriff (PDF)

ErGermanide Schottky Junctionfor n-Type Schottky Barrier Ge MOSFET

Advanced materials research, 2013-05, Vol.699, p.590-595

2013

Volltextzugriff (PDF)

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Advanced materials research, 2013-05, Vol.699, p.817-821

2013

Volltextzugriff (PDF)

Novel silicon surface passivation by Al 2 O 3 /ZnO/Al 2 O 3 films deposited by thermal atomic layer deposition

Japanese Journal of Applied Physics, 2014-04, Vol.53 (4S), p.4

2014

Volltextzugriff (PDF)

Novel silicon surface passivation by Al sub(2)O sub(3)/ZnO/Al sub(2)O sub(3) films deposited by thermal atomic layer deposition

Japanese Journal of Applied Physics, 2014-01, Vol.53 (4S), p.04ER19-1-04ER19-5

2014

Volltextzugriff (PDF)

Blistering Induced Degradation of Thermal Stability Al 2 O 3 Passivation Layer in Crystal Si Solar Cells

Journal of semiconductor technology and science, 2014-02, Vol.14 (1), p.53-60

2014

Volltextzugriff (PDF)

A Novel Atomic Layer Deposited Al 2 O 3 Film with Diluted NH 4 OH for High-Efficient c-Si Solar Cell

Journal of semiconductor technology and science, 2014-02, Vol.14 (1), p.40-47

2014

Volltextzugriff (PDF)

Process Temperature Dependence of Al 2 O 3 Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

Journal of semiconductor technology and science, 2013-12, Vol.13 (6), p.581-588

2013

Volltextzugriff (PDF)

1 – 21 von 21

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(10)
Mit Volltextzugriff
(21)

Publikationsform

Artikel
(21)

Sprache

Englisch
(17)
Koreanisch
(4)

Erscheinungsjahr

n.n

Thema

Physical Sciences
(7)
Physics
(7)
Physics, Applied
(7)
Science & Technology
(7)
Engineering
(5)
Engineering, Electrical & Electronic
(5)
Technology
(5)
전기공학
(4)
Thermal Stability
(3)
Aluminum Oxide
(2)
Deposition
(2)
Negative Fixed Oxide Charge
(2)
Passivation
(2)
Passivation Layer
(2)
Silicon
(2)
Solar Cell
(2)
Aluminum
(1)
Anti-Reflection Coating
(1)
Barrier Height
(1)
Blistering
(1)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Zeitschrift / Serie

Menü

Weitere Dienste

Einstellungen

A Correlation Between Oxygen Vacancies and Reliability Characteristics in a Single Zirconium Oxide Metal-Insulator-Metal Capacitor

Novel silicon surface passivation by Al2O3/ZnO/Al2O3 films deposited by thermal atomic layer deposition

Blistering Induced Degradation of Thermal Stability Al₂O₃ Passivation Layer in Crystal Si Solar Cells

Process Temperature Dependence of Al₂O₃ Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

A Novel Atomic Layer Deposited Al₂O₃ Film with Diluted NH₄OH for High-Efficient c-Si Solar Cell

Novel Ni silicide formed with a Ni/Er/Ni/TiN structure for thermal stable and low contact resistance source/drain in MOSFETs

Effect of surface pretreatment in the thermal atomic layer deposition of Al2O3 for passivation of crystal Si solar cells

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

Blistering Induced Degradation of Thermal Stability Al 2 O 3 Passivation Layer in Crystal Si Solar Cells

A Novel Atomic Layer Deposited Al 2 O 3 Film with Diluted NH 4 OH for High-Efficient c-Si Solar Cell

Process Temperature Dependence of Al 2 O 3 Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

Effect of surface pretreatment in the thermal atomic layer deposition of Al 2 O 3 for passivation of crystal Si solar cells

Effect of surface pretreatment in the thermal atomic layer deposition of Al sub(2)O sub(3) for passivation of crystal Si solar cells

ErGermanide Schottky Junctionfor n-Type Schottky Barrier Ge MOSFET

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Novel silicon surface passivation by Al 2 O 3 /ZnO/Al 2 O 3 films deposited by thermal atomic layer deposition

Novel silicon surface passivation by Al sub(2)O sub(3)/ZnO/Al sub(2)O sub(3) films deposited by thermal atomic layer deposition

Blistering Induced Degradation of Thermal Stability Al 2 O 3 Passivation Layer in Crystal Si Solar Cells

A Novel Atomic Layer Deposited Al 2 O 3 Film with Diluted NH 4 OH for High-Efficient c-Si Solar Cell

Process Temperature Dependence of Al 2 O 3 Film Deposited by Thermal ALD as a Passivation Layer for c-Si Solar Cells

Suchergebnisse filtern