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Highly Elastic and Conductive N-Doped Monolithic Graphene Aerogels for Multifunctional Applications

Advanced functional materials, 2015-12, Vol.25 (45), p.6976-6984

2015

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Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching

ACS applied materials & interfaces, 2019-04, Vol.11 (14), p.13574-13580

2019

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Chemical carving lithography with scanning catalytic probes

Scientific reports, 2020-08, Vol.10 (1), p.13411-13411, Article 13411

2020

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Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs

Optics letters, 2017-08, Vol.42 (16), p.3105-3108

2017

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Heterostructured Mo2N–Mo2C Nanoparticles Coupled with N‐Doped Carbonized Wood to Accelerate the Hydrogen Evolution Reaction

Small structures, 2023-08, Vol.4 (8), p.n/a

2023

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Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

IEEE electron device letters, 2017-08, Vol.38 (8), p.1090-1093

2017

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IEEE_Xplore

Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

Applied physics letters, 2019-09, Vol.115 (10)

2019

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Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Scientific reports, 2020-03, Vol.10 (1), p.4054-4054, Article 4054

2020

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Catalyst feature independent metal-assisted chemical etching of silicon

RSC advances, 2015-01, Vol.5 (93), p.76128-76132

2015

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In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs

Journal of materials chemistry. A, Materials for energy and sustainability, 2014-01, Vol.2 (29), p.11017-11021

2014

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Gate stack technology for nanoscale devices

Materials today (Kidlington, England), 2006-06, Vol.9 (6), p.32-40

2006

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Three-dimensional porous stretchable supercapacitor with wavy structured PEDOT:PSS/graphene electrode

Chemical engineering journal (Lausanne, Switzerland : 1996), 2020-07, Vol.392, p.123794, Article 123794

2020

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Gradually Applying Weakly Supervised and Active Learning for Mass Detection in Breast Ultrasound Images

Applied sciences, 2020-07, Vol.10 (13), p.4519

2020

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Si tunnel transistors with a novel silicided source and 46mV/dec swing

2010 Symposium on VLSI Technology, 2010, p.121-122

2010

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IEEE_Xplore

Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon

ACS omega, 2017-05, Vol.2 (5), p.2100-2105

2017

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Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

Applied physics letters, 2010-04, Vol.96 (14)

2010

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Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching

Solar energy materials and solar cells, 2016-01, Vol.144, p.159-164

2016

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Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors

Microelectronic engineering, 2016-02, Vol.151, p.60-63

2016

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Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

IEEE electron device letters, 2009-03, Vol.30 (3), p.285-287

2009

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IEEE_Xplore

Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors

IEEE journal of quantum electronics, 2007-03, Vol.43 (3), p.238-242

2007

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IEEE_Xplore

Three‐Dimensional Hierarchically Mesoporous ZnCo2O4 Nanowires Grown on Graphene/Sponge Foam for High‐Performance, Flexible, All‐Solid‐State Supercapacitors

Chemistry : a European journal, 2017-01, Vol.23 (3), p.597-604

2017

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An efficient amplification strategy for N-doped NiCo 2 O 4 with oxygen vacancies and partial Ni/Co-nitrides as a dual-function electrode for both supercapatteries and hydrogen electrocatalysis

Journal of materials chemistry. A, Materials for energy and sustainability, 2019-01, Vol.7 (4), p.1468-1478

2019

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SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

Results in physics, 2018-09, Vol.10, p.248-249

2018

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Thermally driven metal-assisted chemical etching of GaAs with in-position and out-of-position catalyst

Journal of materials chemistry. A, Materials for energy and sustainability, 2014-11, Vol.2 (48), p.2481-2485

2014

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Reduction of Contact Resistance Between Ni-InGaAs Alloy and In 0.53 Ga 0.47 As Using Te Interlayer

Transactions on electrical and electronic materials, 2017-10, Vol.18 (5), p.253-256

2017

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Highly Elastic and Conductive N-Doped Monolithic Graphene Aerogels for Multifunctional Applications

Resist-Free Direct Stamp Imprinting of GaAs via Metal-Assisted Chemical Etching

Chemical carving lithography with scanning catalytic probes

Nano/micro dual-textured antireflective subwavelength structures in anisotropically etched GaAs

Heterostructured Mo2N–Mo2C Nanoparticles Coupled with N‐Doped Carbonized Wood to Accelerate the Hydrogen Evolution Reaction

Normally-Off GaN-on-Si MISFET Using PECVD SiON Gate Dielectric

Polarization modulation effect of BeO on AlGaN/GaN high-electron-mobility transistors

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Catalyst feature independent metal-assisted chemical etching of silicon

In-plane and out-of-plane mass transport during metal-assisted chemical etching of GaAs

Gate stack technology for nanoscale devices

Three-dimensional porous stretchable supercapacitor with wavy structured PEDOT:PSS/graphene electrode

Gradually Applying Weakly Supervised and Active Learning for Mass Detection in Breast Ultrasound Images

Si tunnel transistors with a novel silicided source and 46mV/dec swing

Nonlinear Etch Rate of Au-Assisted Chemical Etching of Silicon

Improved thermal stability of Al2O3/HfO2/Al2O3 high-k gate dielectric stack on GaAs

Fabrication of three-dimensional GaAs antireflective structures by metal-assisted chemical etching

Interfacial AlN formation of Si/Ti/Al/Cu Ohmic contact for AlGaN/GaN high-electron-mobility transistors

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- k/Metal Gate Stacks Directly on SiGe

Effectiveness of SiGe Buffer Layers in Reducing Dark Currents of Ge-on-Si Photodetectors

Three‐Dimensional Hierarchically Mesoporous ZnCo2O4 Nanowires Grown on Graphene/Sponge Foam for High‐Performance, Flexible, All‐Solid‐State Supercapacitors

An efficient amplification strategy for N-doped NiCo 2 O 4 with oxygen vacancies and partial Ni/Co-nitrides as a dual-function electrode for both supercapatteries and hydrogen electrocatalysis

SF6 plasma treatment for leakage current reduction of AlGaN/GaN heterojunction field-effect transistors

Thermally driven metal-assisted chemical etching of GaAs with in-position and out-of-position catalyst

Reduction of Contact Resistance Between Ni-InGaAs Alloy and In 0.53 Ga 0.47 As Using Te Interlayer

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