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Access resistor modelling for EEPROM’s retention test vehicle

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1218-1223

2013

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Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability

2008 IEEE International Integrated Reliability Workshop Final Report, 2008, p.12-15

2008

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Alzheimer's Disease Associated Genes Ankyrin and Tau Cause Shortened Lifespan and Memory Loss in Drosophila

Frontiers in cellular neuroscience, 2019-06, Vol.13, p.260-260

2019

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Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides

ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference, 1995, p.299-302

1995

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ANTENATAL DIAGNOSIS OF COMBINED XANTHINE AND SULPHITE OXIDASE DEFICIENCIES

The Lancet (British edition), 1983-12, Vol.322 (8363), p.1363-1364

1983

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Assessment of temperature and voltage accelerating factors for 2.3–3.2 nm SiO 2 thin oxides stressed to hard breakdown

Microelectronics and reliability, 2008, Vol.48 (3), p.335-341

2008

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Assessment of temperature and voltage accelerating factors for 2.3–3.2nm SiO2 thin oxides stressed to hard breakdown

Microelectronics and reliability, 2008-03, Vol.48 (3), p.335-341

2008

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EEPROM tunnel oxide lifetime reliability prediction based on fast electrical stress tests

Electronics letters, 2010-11, Vol.46 (23), p.1568-1569

2010

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Effect of surfactant pluronic F-68 on CHO cell growth, metabolism, production, and glycosylation of human recombinant IFN-γ in mild operating conditions

Biotechnology progress, 2011-01, Vol.27 (1), p.181-190

2011

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An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test

2007 International Semiconductor Device Research Symposium, 2007, p.1-2

2007

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An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test

Solid-state electronics, 2008-10, Vol.52 (10), p.1550-1554

2008

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Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses

2014 International Semiconductor Conference (CAS), 2014, p.197-200

2014

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Isolation of free and membrane-bound polysomes and mRNA highly active in translation and reverse transcription from small discrete regions of rat brain

Neurochemistry international, 1986, Vol.8 (3), p.381-387

1986

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MACRO- AND MICROPROPAGATION OF A CENTENARIAN CLONE OF QUERCUS ROBUR 'FASTIGIATA'

Acta horticulturae, 2000 (536), p.331-338

2000

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MICROPROPAGATION OF A SELECTED ROOTSTOCK OF ACER PALMATUM

Acta horticulturae, 2000 (536), p.347-354

2000

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A New BJT Selector for sub-0.02µm2 High Density Embedded PCM Memory in FDSOI CMOS Technology

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.904-911

1998

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A new method to quantify retention-failed cells of an EEPROM CAST

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1609-1613

2007

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A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.472-481

1998

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A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

International Electron Devices Meeting. Technical Digest, 1996, p.327-330

1996

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A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 1996, p.1651-1654

1996

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A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Microelectronics and reliability, 1996-11, Vol.36 (11-12), p.1651-1654

1996

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Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

Solid-state electronics, 2012-12, Vol.78, p.151-155

2012

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On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Proceedings of International Reliability Physics Symposium, 1996, p.44-54

1996

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Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1322-1329

2007

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Access resistor modelling for EEPROM’s retention test vehicle

Advanced On-The-Fly Method with Correction of Initial Values to Characterize Negative Bias Temperature Instability Reliability

Alzheimer's Disease Associated Genes Ankyrin and Tau Cause Shortened Lifespan and Memory Loss in Drosophila

Analysis of the Early-Failure Rate Prediction of Time-Dependent-Dielectric Breakdown in Thin Oxides

ANTENATAL DIAGNOSIS OF COMBINED XANTHINE AND SULPHITE OXIDASE DEFICIENCIES

Assessment of temperature and voltage accelerating factors for 2.3–3.2 nm SiO 2 thin oxides stressed to hard breakdown

Assessment of temperature and voltage accelerating factors for 2.3–3.2nm SiO2 thin oxides stressed to hard breakdown

EEPROM tunnel oxide lifetime reliability prediction based on fast electrical stress tests

Effect of surfactant pluronic F-68 on CHO cell growth, metabolism, production, and glycosylation of human recombinant IFN-γ in mild operating conditions

An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test

An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test

Improving Flash memory endurance and consumption with ultra-short channel-hot-electron programming pulses

Isolation of free and membrane-bound polysomes and mRNA highly active in translation and reverse transcription from small discrete regions of rat brain

MACRO- AND MICROPROPAGATION OF A CENTENARIAN CLONE OF QUERCUS ROBUR 'FASTIGIATA'

MICROPROPAGATION OF A SELECTED ROOTSTOCK OF ACER PALMATUM

A New BJT Selector for sub-0.02µm2 High Density Embedded PCM Memory in FDSOI CMOS Technology

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

A new method to quantify retention-failed cells of an EEPROM CAST

A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

A new polarity dependence of the reduced trap generation during high-field degradation of nitrided oxides

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

A new statistical model for fitting bimodal oxide breakdown distributions at different field conditions

Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

On the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions

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