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Deconvolution models for determining the real surface composition of InP (1 0 0) after bombardment with 5 keV Ar ions at different angles

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2019-12, Vol.460, p.147-154

2019

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Analysis of GaN cleaning procedures

Applied surface science, 2005-06, Vol.246 (1), p.279-289

2005

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Microstructural and surface characterization of thin gold films on n-Ge (1 1 1)

Physica. B, Condensed matter, 2009-12, Vol.404 (22), p.4493-4495

2009

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Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study

Applied surface science, 2005-12, Vol.252 (5), p.1785-1792

2005

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Ion energy dependence of nanodot formation by nitrogen-bombarded InP

Solar energy materials and solar cells, 2006-06, Vol.90 (10), p.1504-1512

2006

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Ion sputtering, surface topography, SPM and surface analysis of electronic materials

Applied surface science, 1999, Vol.144, p.192-200

1999

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Fluence dependence of the surface roughness of InP after N2+ bombardment

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.230 (1-4), p.533-538

2005

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Fluence dependence of the surface roughness of InP after N 2 + bombardment

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.230 (1-4), p.533-538

2005

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Argon bombardment-induced topography and sputter yields on Si 0.84Ge 0.16

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002, Vol.193 (1), p.739-744

2002

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Argon bombardment-induced topography and sputter yields on Si0.84Ge0.16

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2002-06, Vol.193 (1-4), p.739-744

2002

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Optical properties of as grown and ion implanted (Ar +,N 2+,α) GaAs nipi doping superlattices

Applied surface science, 2000-10, Vol.166 (1), p.77-81

2000

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Optical Properties of As-Grown, α-Particle Irradiated and N+2-Ion Implanted GaN

physica status solidi (b), 1999-11, Vol.216 (1), p.619-623

1999

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Deconvolution models for determining the real surface composition of InP (1 0 0) after bombardment with 5 keV Ar ions at different angles

Analysis of GaN cleaning procedures

Microstructural and surface characterization of thin gold films on n-Ge (1 1 1)

Determination of the thickness and density of the ion bombardment induced altered layer in SiC by means of reflection electron energy loss study

Ion energy dependence of nanodot formation by nitrogen-bombarded InP

Ion sputtering, surface topography, SPM and surface analysis of electronic materials

Fluence dependence of the surface roughness of InP after N2+ bombardment

Fluence dependence of the surface roughness of InP after N 2 + bombardment

Argon bombardment-induced topography and sputter yields on Si 0.84Ge 0.16

Argon bombardment-induced topography and sputter yields on Si0.84Ge0.16

Optical properties of as grown and ion implanted (Ar +,N 2+,α) GaAs nipi doping superlattices

Optical Properties of As-Grown, α-Particle Irradiated and N+2-Ion Implanted GaN

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