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Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures

IEEE transactions on computer-aided design of integrated circuits and systems, 2004-06, Vol.23 (6), p.837-842

Odanaka, S.

2004

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A High-Resolution Method for Quantum Confinement Transport Simulations in MOSFETs

IEEE transactions on computer-aided design of integrated circuits and systems, 2007-01, Vol.26 (1), p.80-85

Odanaka, S.

2007

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Potential design and transport property of 0.1-μm MOSFET with asymmetric channel profile

IEEE transactions on electron devices, 1997-04, Vol.44 (4), p.595-600

1997

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Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Journal of applied physics, 2002-11, Vol.92 (9), p.5228-5232

2002

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Interconnect scaling scenario using a chip level interconnect model

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.90-96

2000

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Physical modeling of the reverse-short-channel effect for circuit simulation

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2449-2452

2001

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Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon

Journal of applied physics, 2000-11, Vol.88 (9), p.4980-4984

2000

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Distinct Physiological Roles of Fructokinase Isozymes Revealed by Gene-Specific Suppression of Frk1 and Frk2 Expression in Tomato

Plant physiology (Bethesda), 2002-07, Vol.129 (3), p.1119-1126

2002

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Double pocket architecture using indium and boron for sub-100 nm MOSFETs

IEEE electron device letters, 2001-07, Vol.22 (7), p.330-332

2001

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A test structure for spectrum analysis of hot-carrier-induced photoemission from MOSFETs

IEEE transactions on semiconductor manufacturing, 2003-05, Vol.16 (2), p.233-238

2003

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Massively parallel computation using a splitting-up operator method for three-dimensional device simulation

IEEE transactions on computer-aided design of integrated circuits and systems, 1995-07, Vol.14 (7), p.824-832

1995

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New CT image reconstruction algorithm based on the Bayes estimation

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1999, Vol.422 (1), p.683-687

1999

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Influence of asymmetric/symmetric source/drain region on asymmetry and mismatch of CMOSFET's and circuit performance

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.529-537

1998

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A proposed algorithm for adaptive computer tomography

Applied radiation and isotopes, 1997-10, Vol.48 (10), p.1451-1458

1997

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Numerical methods for a quantum energy transport model arising in scaled MOSFETs

2011 International Conference on Simulation of Semiconductor Processes and Devices, 2011, p.303-306

2011

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Electrical characteristics of scaled CMOSFET's with source/drain regions fabricated by 7° and 0° tilt-angle implantations

IEEE transactions on electron devices, 1995, Vol.42 (1), p.70-77

1995

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Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFET's

IEEE transactions on electron devices, 1992-05, Vol.39 (5), p.1223-1228

1992

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Increased Burden of Ion Channel Gene Variants Is Related to Distinct Phenotypes in Pediatric Patients With Left Ventricular Noncompaction

Circulation. Genomic and precision medicine, 2020-08, Vol.13 (4), p.e002940-e002940

2020

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Three-dimensional numerical simulation of local oxidation of silicon

IEEE transactions on electron devices, 1991-03, Vol.38 (3), p.505-511

1991

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A mobility model for submicrometer MOSFET simulations including hot-carrier-induced device degradation

IEEE transactions on electron devices, 1988-09, Vol.35 (9), p.1487-1493

1988

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Effect of sitagliptin on blood glucose control in patients with type 2 diabetes mellitus who are treatment naive or poorly responsive to existing antidiabetic drugs: the JAMP study

BMC endocrine disorders, 2016-12, Vol.16 (1), p.70-70, Article 70

2016

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SMART-II: a three-dimensional CAD model for submicrometer MOSFET's

IEEE transactions on computer-aided design of integrated circuits and systems, 1991-05, Vol.10 (5), p.619-628

1991

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The inverse-narrow-width effect of LOCOS isolated n-MOSFET in a high-concentration p-well

IEEE electron device letters, 1992-12, Vol.13 (12), p.636-638

1992

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A spillover effect of avalanche-generated electrons in buried p-channel MOSFET's

IEEE electron device letters, 1991-05, Vol.12 (5), p.224-226

1991

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Numerical simulation of stress-dependent oxide growth at convex and concave corners of trench structures

IEEE electron device letters, 1989-07, Vol.10 (7), p.330-332

1989

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Multidimensional discretization of the stationary quantum drift-diffusion model for ultrasmall MOSFET structures

A High-Resolution Method for Quantum Confinement Transport Simulations in MOSFETs

Potential design and transport property of 0.1-μm MOSFET with asymmetric channel profile

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Interconnect scaling scenario using a chip level interconnect model

Physical modeling of the reverse-short-channel effect for circuit simulation

Effects of end-of-range dislocation loops on transient enhanced diffusion of indium implanted in silicon

Distinct Physiological Roles of Fructokinase Isozymes Revealed by Gene-Specific Suppression of Frk1 and Frk2 Expression in Tomato

Double pocket architecture using indium and boron for sub-100 nm MOSFETs

A test structure for spectrum analysis of hot-carrier-induced photoemission from MOSFETs

Massively parallel computation using a splitting-up operator method for three-dimensional device simulation

New CT image reconstruction algorithm based on the Bayes estimation

Influence of asymmetric/symmetric source/drain region on asymmetry and mismatch of CMOSFET's and circuit performance

A proposed algorithm for adaptive computer tomography

Numerical methods for a quantum energy transport model arising in scaled MOSFETs

Electrical characteristics of scaled CMOSFET's with source/drain regions fabricated by 7° and 0° tilt-angle implantations

Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFET's

Increased Burden of Ion Channel Gene Variants Is Related to Distinct Phenotypes in Pediatric Patients With Left Ventricular Noncompaction

Three-dimensional numerical simulation of local oxidation of silicon

A mobility model for submicrometer MOSFET simulations including hot-carrier-induced device degradation

Effect of sitagliptin on blood glucose control in patients with type 2 diabetes mellitus who are treatment naive or poorly responsive to existing antidiabetic drugs: the JAMP study

SMART-II: a three-dimensional CAD model for submicrometer MOSFET's

The inverse-narrow-width effect of LOCOS isolated n-MOSFET in a high-concentration p-well

A spillover effect of avalanche-generated electrons in buried p-channel MOSFET's

Numerical simulation of stress-dependent oxide growth at convex and concave corners of trench structures

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