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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Nature communications, 2014-09, Vol.5 (1), p.4836-4836, Article 4836

2014

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Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography

ACS nano, 2012-08, Vol.6 (8), p.6786-6792

2012

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Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

Advanced energy materials, 2013-05, Vol.3 (5), p.566-571

2013

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Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber

Advanced energy materials, 2016-11, Vol.6 (22), p.n/a

2016

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Diffusion-Controlled Porous Crystalline Silicon Lithium Metal Batteries

iScience, 2020-10, Vol.23 (10), p.101586-101586, Article 101586

2020

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Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources

Chemistry of materials, 2021-04, Vol.33 (7), p.2267-2273

2021

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Layer transfer by controlled spalling

Journal of physics. D, Applied physics, 2013-04, Vol.46 (15), p.152002-1-6

2013

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High-Performance Air-Stable n‑Type Carbon Nanotube Transistors with Erbium Contacts

ACS nano, 2013-09, Vol.7 (9), p.8303-8308

2013

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Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy

Advanced functional materials, 2014-07, Vol.24 (28), p.4492-4496

2014

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Kerf-Less Removal of Si, Ge, and III-V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

IEEE journal of photovoltaics, 2012-04, Vol.2 (2), p.141-147

2012

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Hybrid-orientation technology (HOT): opportunities and challenges

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.965-978

2006

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Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.35.7.1-35.7.4

2019

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Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

Applied physics letters, 2012-09, Vol.101 (10)

2012

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Hafnium oxide gate dielectrics on sulfur-passivated germanium

Applied physics letters, 2006-09, Vol.89 (11), p.112905-112905-3

2006

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Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-09, Vol.28 (5), p.985-992

2010

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Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles

Nano letters, 2015-01, Vol.15 (1), p.34-38

2015

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Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

IEEE electron device letters, 2008-07, Vol.29 (7), p.811-813

2008

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Creation of a transient vapor nanogap between two fluidic reservoirs for single molecule manipulation

Review of scientific instruments, 2014-08, Vol.85 (8), p.084301

2014

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(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges

ECS transactions, 2015-03, Vol.66 (4), p.17-30

2015

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Graphic Consciousness: The Visual Cultures of Integrated Industrial Unions at Midcentury

American quarterly, 2014-12, Vol.66 (4), p.883-917

Ott, John

2014

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Threshold voltage control in NiSi-gated MOSFETs through SIIS

IEEE transactions on electron devices, 2005-01, Vol.52 (1), p.39-46

2005

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Flexible Solar Cells: Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic (Adv. Energy Mater. 5/2013)

Advanced energy materials, 2013-05, Vol.3 (5), p.542-542

2013

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High- \kappa/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

IEEE electron device letters, 2010-04, Vol.31 (4), p.275-277

2010

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High-k/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

IEEE electron device letters, 2010-04, Vol.31 (4), p.275-277

2010

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(Invited) Low-Temperature Growth of Strained Germanium Quantum Wells for High Mobility Applications

ECS transactions, 2020-09, Vol.98 (5), p.215-224

2020

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Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-Assisted Nanolithography

Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic

Photovoltaic Device with over 5% Efficiency Based on an n-Type Ag2ZnSnSe4 Absorber

Diffusion-Controlled Porous Crystalline Silicon Lithium Metal Batteries

Atomic Layer Deposition of Tungsten Oxide Using Nitrogen Dioxide: A Comparative Study with Other Oxygen Sources

Layer transfer by controlled spalling

High-Performance Air-Stable n‑Type Carbon Nanotube Transistors with Erbium Contacts

Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy

Kerf-Less Removal of Si, Ge, and III-V Layers by Controlled Spalling to Enable Low-Cost PV Technologies

Hybrid-orientation technology (HOT): opportunities and challenges

Metal-oxide based, CMOS-compatible ECRAM for Deep Learning Accelerator

Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

Hafnium oxide gate dielectrics on sulfur-passivated germanium

Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors

Strain-Driven Mound Formation of Substrate under Epitaxial Nanoparticles

Mobility Scaling in Short-Channel Length Strained Ge-on-Insulator P-MOSFETs

Creation of a transient vapor nanogap between two fluidic reservoirs for single molecule manipulation

(Invited) Strained-SiGe Channel FinFETs for High-Performance CMOS: Opportunities and Challenges

Graphic Consciousness: The Visual Cultures of Integrated Industrial Unions at Midcentury

Threshold voltage control in NiSi-gated MOSFETs through SIIS

Flexible Solar Cells: Ultralight High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic (Adv. Energy Mater. 5/2013)

High- \kappa/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

High-k/Metal-Gate Fully Depleted SOI CMOS With Single-Silicide Schottky Source/Drain With Sub-30-nm Gate Length

(Invited) Low-Temperature Growth of Strained Germanium Quantum Wells for High Mobility Applications

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