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A first-principles study of the effect of doping and vacancy defects on the magnetic properties of ZnSnAs2:V

Indian journal of physics, 2022-07, Vol.96 (8), p.2379-2384

2022

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Structural and electronic properties of ZnO: A first-principles density-functional theory study within LDA(GGA) and LDA(GGA)+U methods

Solid state communications, 2021-02, Vol.325, p.114166, Article 114166

2021

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Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal

Semiconductors (Woodbury, N.Y.), 2018-08, Vol.52 (8), p.1047-1050

2018

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Inverse scattering problem for the Schrödinger equation with an additional increasing potential on the line

Theoretical and mathematical physics, 2023-07, Vol.216 (1), p.1010-1023

2023

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On the Assessment of the Long-Term Relationship between the AZN/RUB and USD/RUB Rates against the Backdrop of Increasing Sanctions against Russia

Studies on Russian economic development, 2024-04, Vol.35 (2), p.308-318

2024

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Lattice dynamics of layered semiconducting compound TlGaS2

Physica Status Solidi (b), 2011-01, Vol.248 (1), p.181-186

2011

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Influence of spin–orbit interaction on band structure of TlInSe 2

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2019-06, Vol.33 (16), p.1950161

2019

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Electronic structure of the chainlike compound TlSe

Physical review. B, Condensed matter and materials physics, 2004-11, Vol.70 (19), p.195118.1-195118.6, Article 195118

2004

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Band structure and dielectric function of TlInTe2

Physica status solidi. A, Applications and materials science, 2006-09, Vol.203 (11), p.2841-2844

2006

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The effect of vacancy-defects on the magnetic properties of ZnSn1−xVxAs 2 : An ab initio study

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2020-12, Vol.34 (30), p.2050285

2020

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Electronic structure and effective masses of TlInSe2 under pressure

Materials science--Poland, 2018-03, Vol.35 (4), p.857-860

2018

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Vacancy Formation Energy for the Charged and Neutral States of TlGaSe$_{2}$ Crystal

Metallofizika i noveĭshie tekhnologii, 2017-11, Vol.39 (5), p.657-664

2017

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First-principle calculation of the electronic structure, DOS and effective mass TlInSe 2

Modern physics letters. B, Condensed matter physics, statistical physics, applied physics, 2017-05, Vol.31 (14), p.1750155

2017

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Ab initio investigation of the pressure influence on elastic properties of the GaS layered compound

Physics of the solid state, 2014-03, Vol.56 (3), p.619-625

2014

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Transport properties of TlIn1-xGaxSe2 (0 < = x < = 0.3) crystals

Inorganic materials, 2007-10, Vol.43 (10), p.1054-1058

2007

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On One Co-Integration Issue of Trade Links of Azerbaijan, Russia, Belarus and Kazakhstan

Statistics and Economics, 2020-04, Vol.17 (2), p.29-39

2020

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Analysis of erythrocyte and platelet membrane proteins in various forms of beta-thalassemia

Biochemistry (Moscow), 2004-07, Vol.69 (7), p.748-753

2004

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Boundary value problem for an even-order equation with multiple characteristic roots

Doklady. Mathematics, 2003-05, Vol.67 (3), p.329-332

ORUDZHEV, E. G

2003

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Effect of pressure on phonon spectra and elastic properties of orthorhombic GeSe

Physics of the solid state, 2014-04, Vol.56 (4), p.761-764

2014

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СРАВНИТЕЛЬНЫЙ АНАЛИЗ ВЗАИМОСВЯЗЕЙ КУРСА АЗЕРБАЙДЖАНСКОΓО МАНАТА И ОСНОВНЫХ ЕΓО МАКРОЭКОНОМИЧЕСКИХ ДЕТЕРМИНАНТОВ

Aktualʹni problemy ekonomiky, 2018-01 (201), p.94-106

2018

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Band structure and optical properties of the TlInTe2 chain compound

Physics of the solid state, 2006-01, Vol.48 (1), p.42-46

2006

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Band structure and permittivity of the TlGaTe2 compound

Physics of the solid state, 2004-05, Vol.46 (5), p.833-835

2004

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The resolvent and spectrum for a class of differential operators with periodic coefficients

Functional analysis and its applications, 2000-07, Vol.34 (3), p.232-234

Orudzhev, É. G.

2000

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Lattice dynamics of layered ferroelectric semiconductor compound TlGaSe2

Materials research bulletin, 2010-10, Vol.45 (10), p.1438-1442

2010

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Lattice dynamics of Ferroelectric TlInS 2 crystal

Canadian journal of physics, 2012-05, Vol.90 (5), p.407-412

2012

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A first-principles study of the effect of doping and vacancy defects on the magnetic properties of ZnSnAs2:V

Structural and electronic properties of ZnO: A first-principles density-functional theory study within LDA(GGA) and LDA(GGA)+U methods

Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal

Inverse scattering problem for the Schrödinger equation with an additional increasing potential on the line

On the Assessment of the Long-Term Relationship between the AZN/RUB and USD/RUB Rates against the Backdrop of Increasing Sanctions against Russia

Lattice dynamics of layered semiconducting compound TlGaS2

Influence of spin–orbit interaction on band structure of TlInSe 2

Electronic structure of the chainlike compound TlSe

Band structure and dielectric function of TlInTe2

The effect of vacancy-defects on the magnetic properties of ZnSn1−xVxAs 2 : An ab initio study

Electronic structure and effective masses of TlInSe2 under pressure

Vacancy Formation Energy for the Charged and Neutral States of TlGaSe$_{2}$ Crystal

First-principle calculation of the electronic structure, DOS and effective mass TlInSe 2

Ab initio investigation of the pressure influence on elastic properties of the GaS layered compound

Transport properties of TlIn1-xGaxSe2 (0 < = x < = 0.3) crystals

On One Co-Integration Issue of Trade Links of Azerbaijan, Russia, Belarus and Kazakhstan

Analysis of erythrocyte and platelet membrane proteins in various forms of beta-thalassemia

Boundary value problem for an even-order equation with multiple characteristic roots

Effect of pressure on phonon spectra and elastic properties of orthorhombic GeSe

СРАВНИТЕЛЬНЫЙ АНАЛИЗ ВЗАИМОСВЯЗЕЙ КУРСА АЗЕРБАЙДЖАНСКОΓО МАНАТА И ОСНОВНЫХ ЕΓО МАКРОЭКОНОМИЧЕСКИХ ДЕТЕРМИНАНТОВ

Band structure and optical properties of the TlInTe2 chain compound

Band structure and permittivity of the TlGaTe2 compound

The resolvent and spectrum for a class of differential operators with periodic coefficients

Lattice dynamics of layered ferroelectric semiconductor compound TlGaSe2

Lattice dynamics of Ferroelectric TlInS 2 crystal

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