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Te-based chalcogenide materials for selector applications

Scientific reports, 2017-08, Vol.7 (1), p.8103-12, Article 8103

2017

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Material relaxation in chalcogenide OTS SELECTOR materials

Microelectronic engineering, 2019-07, Vol.215, p.110996, Article 110996

2019

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A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash

IEEE electron device letters, 2022-12, Vol.43 (12), p.2085-2088

2022

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Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Applied physics letters, 2011-08, Vol.99 (5)

2011

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Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

Journal of the Electrochemical Society, 2008, Vol.155 (7), p.H552

2008

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High- k dielectrics for future generation memory devices (Invited Paper)

Microelectronic engineering, 2009-07, Vol.86 (7), p.1789-1795

2009

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Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

Thin solid films, 2013-04, Vol.533, p.29-33

2013

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Electronic properties of manganese impurities in germanium

Journal of physics. D, Applied physics, 2015-05, Vol.48 (17), p.175101-5

2015

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Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

Journal of applied physics, 2009-11, Vol.106 (9)

2009

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Formation and texture of palladium germanides studied by in situ X-ray diffraction and pole figure measurements

Thin solid films, 2014-01, Vol.551, p.86-91

2014

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Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Applied physics letters, 2007-01, Vol.90 (3)

2007

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Silicides and germanides for nano-CMOS applications

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.144-154

2008

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Control of metal/oxide electron barriers in CBRAM cells by low work-function liners

Microelectronic engineering, 2013-09, Vol.109, p.156-159

2013

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Electron barrier height at CuxTe1−x/Al2O3 interfaces of conducting bridge memory stacks

Thin solid films, 2013-04, Vol.533, p.34-37

2013

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Low temperature chemical vapour synthesis of Cu3Ge thin films for interconnect applications

Microelectronic engineering, 2014-05, Vol.120, p.246-250

2014

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Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium

Journal of applied physics, 2008-07, Vol.104 (2), p.023705-023705-7

2008

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Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates

IEEE electron device letters, 2006, Vol.27 (1), p.34-36

2006

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The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

Solid-state electronics, 2005-06, Vol.49 (6), p.878-883

2005

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Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n -type germanium

Applied physics letters, 2006-05, Vol.88 (18), p.183506-183506-3

2006

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Defect engineering aspects of advanced Ge process modules

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.49-55

2008

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Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

IEEE electron device letters, 2006-02, Vol.27 (2), p.99-101

2006

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Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain

Microelectronic engineering, 2007-11, Vol.84 (11), p.2547-2551

2007

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Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.35.1.1-35.1.4

2019

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Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]

Journal of the Electrochemical Society, 2010, Vol.157 (1), p.G1

2010

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Properties of Ultrathin High Permittivity (Nb[sub 1−x]Ta[sub x])[sub 2]O[sub 5] Films Prepared by Aqueous Chemical Solution Deposition

Journal of the Electrochemical Society, 2010, Vol.157 (1), p.G13

2010

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Te-based chalcogenide materials for selector applications

Material relaxation in chalcogenide OTS SELECTOR materials

A Novel Ni-Al Alloy Metal Induced Lateral Crystallization Process for Improved Channel Conduction in 3-D NAND Flash

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

High- k dielectrics for future generation memory devices (Invited Paper)

Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems

Electronic properties of manganese impurities in germanium

Composition influence on the physical and electrical properties of SrxTi1−xOy-based metal-insulator-metal capacitors prepared by atomic layer deposition using TiN bottom electrodes

Formation and texture of palladium germanides studied by in situ X-ray diffraction and pole figure measurements

Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions

Silicides and germanides for nano-CMOS applications

Control of metal/oxide electron barriers in CBRAM cells by low work-function liners

Electron barrier height at CuxTe1−x/Al2O3 interfaces of conducting bridge memory stacks

Low temperature chemical vapour synthesis of Cu3Ge thin films for interconnect applications

Study of metal-related deep-level defects in germanide Schottky barriers on n -type germanium

Work function of Ni silicide phases on HfSiON and SiO2 : NiSi, Ni2Si, Ni31Si12, and Ni3Si fully silicided gates

The barrier height inhomogeneity in identically prepared Au/n-GaAs Schottky barrier diodes

Deep level transient spectroscopy study of nickel-germanide Schottky barriers on n -type germanium

Defect engineering aspects of advanced Ge process modules

Modulation of the workfunction of Ni fully silicided gates by doping: dielectric and silicide phase effects

Thermal stability of NiPt- and Pt-silicide contacts on SiGe source/drain

Composition Optimization and Device Understanding of Si-Ge-As-Te Ovonic Threshold Switch Selector with Excellent Endurance

Atomic Layer Deposition of Strontium Titanate Films Using Sr([sup t]Bu[sub 3]Cp)[sub 2] and Ti(OMe)[sub 4]

Properties of Ultrathin High Permittivity (Nb[sub 1−x]Ta[sub x])[sub 2]O[sub 5] Films Prepared by Aqueous Chemical Solution Deposition

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