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Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection

Applied physics express, 2008-12, Vol.1, p.121102

2008

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Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate

Applied physics express, 2009-05, Vol.2, p.52101

2009

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Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

Japanese Journal of Applied Physics, 2003-01, Vol.42 (Part 2, No.1A/B), p.L4-L6

2003

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Novel Liquid Phase Epitaxy (LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method

Japanese Journal of Applied Physics, 2003-08, Vol.42 (Part 2, No. 8A), p.L879-L881

2003

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Bidirectionally injection-locked coupled microring Ga N lasers

Physical review applied, 2024-02, Vol.21 (2), Article 024014

2024

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Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes

Applied physics letters, 2000-10, Vol.77 (14), p.2151-2153

2000

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Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System

Japanese Journal of Applied Physics, 2003-07, Vol.42 (Part 2, No. 7A), p.L729-L731

2003

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Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer

Physical review. B, Condensed matter, 2002-02, Vol.65 (7), Article 073308

2002

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In inhomogeneity and emission characteristics of InGaN

Journal of physics. Condensed matter, 2001-08, Vol.13 (32), p.6993-7010

2001

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Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE)

Japanese Journal of Applied Physics, 2004-02, Vol.43 (No. 2A), p.L173-L175

2004

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Degenerate four-wave-mixing spectroscopy on epitaxially laterally overgrown GaN: Signals from below the fundamental absorption edge

Applied physics letters, 2001-10, Vol.79 (15), p.2351-2353

2001

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Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

Japanese Journal of Applied Physics, 2003-02, Vol.42 (Part 2, No. 2B), p.L208-L208

2003

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Emission Mechanism in InGaN-Based Light Emitting Devices

Zairyō, 2001, Vol.50 (4), p.372-375

2001

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Room-Temperature Continuous-Wave Lasing of A Violet GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection

Rēzā kenkyū, 2009-09, Vol.37 (9), p.673-677

2009

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In inhomogeneity and emission characteristics of InGaN: Semiconducting nitrides

Journal of physics. Condensed matter, 2001, Vol.13 (32), p.6993-7010

2001

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Growth of Transparent Large Size GaN Single Crystal with Low Dislocations Using Alkali Metal-based Flux.(<Special issue>The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)

Journal of the Japanese Association for Crystal Growth, 2003/06/25, Vol.30(2), pp.96-103

2003

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LPE法による大面積・透明GaN単結晶の育成(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)

日本結晶成長学会誌, 2003/06/25, Vol.30(2), pp.96-103

2003

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Effects of internal electrical field on transient absorption in In x Ga 1 − x N thin layers and quantum wells with different thickness by pump and probe spectroscopy

Physical review. B, Condensed matter, 2003-08, Vol.68 (8), Article 085303

2003

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Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection

Improvement in Lasing Characteristics of GaN-based Vertical-Cavity Surface-Emitting Lasers Fabricated Using a GaN Substrate

Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

Novel Liquid Phase Epitaxy (LPE) Growth Method for Growing Large GaN Single Crystals: Introduction of the Flux Film Coated-Liquid Phase Epitaxy (FFC-LPE) Method

Bidirectionally injection-locked coupled microring Ga N lasers

Dynamics of optical gain in InxGa1−xN multi-quantum-well-based laser diodes

Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System

Effects of internal electric field and carrier density on transient absorption spectra in a thin GaN epilayer

In inhomogeneity and emission characteristics of InGaN

Optical Property of GaN Single Crystals Grown by Liquid Phase Epitaxy (LPE)

Degenerate four-wave-mixing spectroscopy on epitaxially laterally overgrown GaN: Signals from below the fundamental absorption edge

Growth of a Large GaN Single Crystal Using the Liquid Phase Epitaxy (LPE) Technique

Emission Mechanism in InGaN-Based Light Emitting Devices

Room-Temperature Continuous-Wave Lasing of A Violet GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection

In inhomogeneity and emission characteristics of InGaN: Semiconducting nitrides

Growth of Transparent Large Size GaN Single Crystal with Low Dislocations Using Alkali Metal-based Flux.(<Special issue>The Role of the Substrate in Determining the Properties of Epitaxial Group III Nitrides)

LPE法による大面積・透明GaN単結晶の育成(<小特集>ナノ構造・エピ成長分科会特集「窒化物半導体エピタキシャル成長における基板の役割」の再考)

Effects of internal electrical field on transient absorption in In x Ga 1 − x N thin layers and quantum wells with different thickness by pump and probe spectroscopy

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