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Higher-Order Finite Element Methods

1, 2003

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Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs

Applied physics letters, 1999-11, Vol.75 (21), p.3336-3338

1999

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Integral methods in low-frequency electromagnetics

1, 2009

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Interwell carrier transport in InGaAsP multiple quantum well laser structures

Applied physics letters, 1996-12, Vol.69 (24), p.3695-3697

1996

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Room temperature carrier recombination in InGaAs/GaAs quantum wells

Journal of applied physics, 1993-09, Vol.74 (5), p.3587-3589

1993

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Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

Applied physics letters, 1995-04, Vol.66 (15), p.1939-1941

1995

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Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

IEEE journal of selected topics in quantum electronics, 1997-04, Vol.3 (2), p.315-319

1997

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Electron relaxation and capture in InGaAsP quantum well laser structures

Applied physics letters, 1995-06, Vol.66 (23), p.3164-3166, Article 3164

1995

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Non-thermal photoexcited electron distributions in non-stoichiometric GaAs

Semiconductor science and technology, 1997-04, Vol.12 (4), p.396-400

1997

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Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures

Applied physics letters, 1996-08, Vol.69 (8), p.1101-1103

1996

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Photoexcited carrier transport in InGaAsP/InP quantum well laser structure

Applied physics letters, 1994-10, Vol.65 (16), p.2057-2059

1994

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Femtosecond electron transport in quantum well laser structures with step-graded confinement layers

Applied physics letters, 1995-04, Vol.66 (16), p.2098-2100

1995

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Different carrier temperatures in the wells and in the barriers of InGaAs/GaAs single quantum well structures

Semiconductor science and technology, 1994-05, Vol.9 (5S), p.756-758

1994

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Interwell Carrier Distribution in InAlGaAs Quantum Well Laser Structures

physica status solidi (b), 1997-11, Vol.204 (1), p.577-580

1997

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Vertical carrier transport in InP-based quantum well laser structures

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-02, Vol.51 (1), p.30-33

1998

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Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields

Physica status solidi. B. Basic research, 1995-09, Vol.191 (1), p.155-159

1995

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Stark shift of the interband transitions in asymmetric step InGaAs/GaAs quantum wells

Journal of applied physics, 1993-05, Vol.73 (9), p.4691-4693

1993

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Electroreflectance studies of InGaAs/GaAs asymmetric step quantum wells

Semiconductor science and technology, 1993-10, Vol.8 (10), p.1875-1880

1993

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Model for optical bistability in GaAs/AlGaAs Fabry–Perot étalons including diffraction, carrier diffusion, and heat conduction

Journal of the Optical Society of America. B, Optical physics, 1990-01, Vol.7 (1), p.35

Olin, Ulf

1990

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Effects of diffraction and diffusion in dispersive optical bistability in Fabry–Perot étalons

Journal of the Optical Society of America. B, Optical physics, 1988-01, Vol.5 (1), p.20

Olin, Ulf

1988

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Space charge effects on interband optical nonlinearities in asymmetric coupled quantum wells

Le Journal de Physique IV, 1993-10, Vol.3 (C5), p.233-236

1993

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IMPROVED PERFORMANCE OF BISTABLE CdSe FILTERS

Le Journal de Physique Colloques, 1988-06, Vol.49 (C2), p.C2-C2-130

1988

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Ultrafast photoluminescence decay in low-temperature MOCVD-grown InxGa1-xAs

Semiconductor science and technology, 1994-07, Vol.9 (7), p.1382-1386

1994

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SUBNANOSECOND ABSORPTIVE SWITCHING IN GaAs ETALONS

Le Journal de Physique Colloques, 1988-06, Vol.49 (C2), p.C2-C2-200

1988

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Space-charge-induced interband optical nonlinearities in asymmetric coupled quantum wells: Advances in optoelectronics in Europe: the RACE and ESPRIT programmes

Optical and quantum electronics, 1994, Vol.26 (5), p.S565-S569

1994

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Higher-Order Finite Element Methods

Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs

Integral methods in low-frequency electromagnetics

Interwell carrier transport in InGaAsP multiple quantum well laser structures

Room temperature carrier recombination in InGaAs/GaAs quantum wells

Subpicosecond carrier lifetimes in GaAs grown by molecular beam epitaxy at low substrate temperature

Vertical carrier transport in InGaAsP multiple-quantum-well laser structures: effect of p-doping

Electron relaxation and capture in InGaAsP quantum well laser structures

Non-thermal photoexcited electron distributions in non-stoichiometric GaAs

Photoexcited carrier dynamics in InAlGaAs/InP quantum well laser structures

Photoexcited carrier transport in InGaAsP/InP quantum well laser structure

Femtosecond electron transport in quantum well laser structures with step-graded confinement layers

Different carrier temperatures in the wells and in the barriers of InGaAs/GaAs single quantum well structures

Interwell Carrier Distribution in InAlGaAs Quantum Well Laser Structures

Vertical carrier transport in InP-based quantum well laser structures

Quantum Confined Stark Effect in InGaAs/GaAs Quantum Wells under High Electric Fields

Stark shift of the interband transitions in asymmetric step InGaAs/GaAs quantum wells

Electroreflectance studies of InGaAs/GaAs asymmetric step quantum wells

Model for optical bistability in GaAs/AlGaAs Fabry–Perot étalons including diffraction, carrier diffusion, and heat conduction

Effects of diffraction and diffusion in dispersive optical bistability in Fabry–Perot étalons

Space charge effects on interband optical nonlinearities in asymmetric coupled quantum wells

IMPROVED PERFORMANCE OF BISTABLE CdSe FILTERS

Ultrafast photoluminescence decay in low-temperature MOCVD-grown InxGa1-xAs

SUBNANOSECOND ABSORPTIVE SWITCHING IN GaAs ETALONS

Space-charge-induced interband optical nonlinearities in asymmetric coupled quantum wells: Advances in optoelectronics in Europe: the RACE and ESPRIT programmes

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