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On the primary process in the plasma-chemical and photochemical vapor deposition from silane. III: Mechanism of the radiative species Si (1P0) formation

The Journal of chemical physics, 1989-12, Vol.91 (11), p.6822-6829

1989

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The importance of the positively charged surface for the epitaxial growth of diamonds at low pressure

Japanese Journal of Applied Physics, 1987-05, Vol.26 (5), p.527-529

1987

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Surface migration enhancement of adatoms in the photoexcited process on reconstructed diamond (001) surfaces

Applied surface science, 1994-05, Vol.79 (1-4), p.255-263

1994

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Elementary process of the thermal decomposition of alkyl gallium

Journal of crystal growth, 1988-09, Vol.91 (4), p.471-480

1988

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Chemically Amplified Resists. V: Photochemical Proton Generation Mechanism from Triphenylsulfonium Salts

Journal of Photopolymer Science and Technology, 1994, Vol.7(3), pp.483-486

1994

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On the reaction mechanism of the pyrolyses of TMG and TEG in MOCVD growth reactors

Japanese Journal of Applied Physics, 1987-05, Vol.26 (5), p.564-566

1987

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PHOTOCHEMICAL PROTON GENERATION MECHANISM FROM ONIUM SALTS

Journal of Photopolymer Science and Technology, 1990, Vol.3(3), pp.249-258

1990

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Acid-catalyzed degradation mechanism of poly(phthalaldehyde): Unzipping reaction of chemical amplification resist

Journal of polymer science. Part A, Polymer chemistry, 1997-01, Vol.35 (1), p.77-89

1997

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CHEMICALLY AMPLIFIED RESISTS IV. PROTON-CATALYZED DEGRADATION MECHANISM OF POLY(PHTHALALDEHYDE)

Journal of Photopolymer Science and Technology, 1993, Vol.6(4), pp.491-494

1993

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CHEMICALLY AMPLIFIED RESISTS III. THE FINAL PHENOLIC PRODUCT FORMATION MECHANISM FROM t-BOC

Journal of Photopolymer Science and Technology, 1993, Vol.6(1), pp.23-26

1993

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CHEMICALLY AMPLIFIED RESISTS VII. PROTON GENERATION FROM TRIPHENYL SULFONIUM SALTS via PHOTOCHEMICAL ISOMERIZATION MECHANISM

Journal of Photopolymer Science and Technology, 1995, Vol.8(4), pp.653-656

1995

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On the primary process in plasma-chemical and photochemical vapor deposition from silane: an ab initio study of unimolecular decomposition of SiH4 in the lowest triplet state

Chemical physics letters, 1985-08, Vol.118 (5), p.498-502

1985

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ELEMENTARY REACTIONS IN PHOTOCHEMISTRY OF 2-DIAZOQUINONES AND 2-DIAZOKETONES

Journal of Photopolymer Science and Technology, 1989, Vol.2(3), pp.325-339

1989

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On the primary process in the plasma-chemical and photochemical vapor deposition from silane. Mechanism of the radiative species SiH (A 2#7B-O) formation

The Journal of chemical physics, 1986-09, Vol.85 (5), p.2808-2813

1986

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Epitaxial growth mechanism of the (100) As surface of GaAs: the effect of positive holes

Japanese Journal of Applied Physics, 1988-06, Vol.27 (6), p.L960-L963

1988

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Mechanism of the Wolff Rearrangement

Chemical and Pharmaceutical Bulletin, 1989/03/25, Vol.37(3), pp.573-575

1989

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CHEMICAL AMPLIFICATION RESISTS II. DEGRADATION MECHANISM OF t-BOC

Journal of Photopolymer Science and Technology, 1992, Vol.5(1), pp.31-34

1992

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Epitaxial growth mechanism of diamond crystal in CH4-H2 plasma

Journal of the American Chemical Society, 1986-09, Vol.108 (19), p.5780-5783

1986

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CHEMICALLY AMPLIFIED RESISTS VI. PHOTOCHEMICAL PROTON GENERATION MECHANISM FROM 2-OXOCYCLOHEXYL-CYCLOHEXYL-METHYL SULFONIUM SALTS

Journal of Photopolymer Science and Technology, 1995, Vol.8(4), pp.611-614

1995

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Epitaxial growth mechanism of diamond crystal in methane-hydrogen plasma

Journal of the American Chemical Society, 1986-09, Vol.108 (19), p.5780-5783

1986

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Prefulvene as a stable intermediate at the potential energy surface minimum of the benzene .dblharw. benzvalene isomerization process

Journal of the American Chemical Society, 1984-10, Vol.106 (22), p.6751-6755

1984

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Reactive Intermediates Produced in the Decomposition of 2-Diazoketone : Mechanism of the Wolff Rearrangement

Chemical and Pharmaceutical Bulletin, 1987/01/25, Vol.35(1), pp.1-8

1987

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Theoretical Study of Oxygen Atom (1D) Insertion into Methane

Chemical and Pharmaceutical Bulletin, 1987/03/25, Vol.35(3), pp.941-947

1987

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(Invited) Mechanism of Dry Development and Dry Etch Resistance of Resist

Japanese Journal of Applied Physics, 1982-01, Vol.21 (S1), p.135

1982

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High-remaining dry-developed resist patterns of steep profile

Japanese Journal of Applied Physics, 1983-07, Vol.22 (7), p.1215-1220

1983

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On the primary process in the plasma-chemical and photochemical vapor deposition from silane. III: Mechanism of the radiative species Si (1P0) formation

The importance of the positively charged surface for the epitaxial growth of diamonds at low pressure

Surface migration enhancement of adatoms in the photoexcited process on reconstructed diamond (001) surfaces

Elementary process of the thermal decomposition of alkyl gallium

Chemically Amplified Resists. V: Photochemical Proton Generation Mechanism from Triphenylsulfonium Salts

On the reaction mechanism of the pyrolyses of TMG and TEG in MOCVD growth reactors

PHOTOCHEMICAL PROTON GENERATION MECHANISM FROM ONIUM SALTS

Acid-catalyzed degradation mechanism of poly(phthalaldehyde): Unzipping reaction of chemical amplification resist

CHEMICALLY AMPLIFIED RESISTS IV. PROTON-CATALYZED DEGRADATION MECHANISM OF POLY(PHTHALALDEHYDE)

CHEMICALLY AMPLIFIED RESISTS III. THE FINAL PHENOLIC PRODUCT FORMATION MECHANISM FROM t-BOC

CHEMICALLY AMPLIFIED RESISTS VII. PROTON GENERATION FROM TRIPHENYL SULFONIUM SALTS via PHOTOCHEMICAL ISOMERIZATION MECHANISM

On the primary process in plasma-chemical and photochemical vapor deposition from silane: an ab initio study of unimolecular decomposition of SiH4 in the lowest triplet state

ELEMENTARY REACTIONS IN PHOTOCHEMISTRY OF 2-DIAZOQUINONES AND 2-DIAZOKETONES

On the primary process in the plasma-chemical and photochemical vapor deposition from silane. Mechanism of the radiative species SiH (A 2#7B-O) formation

Epitaxial growth mechanism of the (100) As surface of GaAs: the effect of positive holes

Mechanism of the Wolff Rearrangement

CHEMICAL AMPLIFICATION RESISTS II. DEGRADATION MECHANISM OF t-BOC

Epitaxial growth mechanism of diamond crystal in CH4-H2 plasma

CHEMICALLY AMPLIFIED RESISTS VI. PHOTOCHEMICAL PROTON GENERATION MECHANISM FROM 2-OXOCYCLOHEXYL-CYCLOHEXYL-METHYL SULFONIUM SALTS

Epitaxial growth mechanism of diamond crystal in methane-hydrogen plasma

Prefulvene as a stable intermediate at the potential energy surface minimum of the benzene .dblharw. benzvalene isomerization process

Reactive Intermediates Produced in the Decomposition of 2-Diazoketone : Mechanism of the Wolff Rearrangement

Theoretical Study of Oxygen Atom (1D) Insertion into Methane

(Invited) Mechanism of Dry Development and Dry Etch Resistance of Resist

High-remaining dry-developed resist patterns of steep profile

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