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Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

AIP advances, 2017-09, Vol.7 (9), p.095212-095212-9

2017

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Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition

ECS journal of solid state science and technology, 2019, Vol.8 (6), p.Q101-Q105

2019

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Novel material for super high efficiency multi-junction solar cells

Journal of crystal growth, 2011-03, Vol.318 (1), p.328-331

2011

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In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Journal of crystal growth, 2013-09, Vol.378, p.34-36

2013

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Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

Physica. B, Condensed matter, 2006-04, Vol.376, p.236-239

2006

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Evaluation of quantum confinement effect in nanocrystal Si dot layer by Raman spectroscopy

Journal of nanoscience and nanotechnology, 2012-11, Vol.12 (11), p.8700-8703

2012

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(Invited) Potential and Activities of III-V/Si Tandem Solar Cells

ECS transactions, 2015-09, Vol.69 (4), p.11-20

2015

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Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

Thin solid films, 2008-04, Vol.516 (11), p.3517-3520

2008

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Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

Thin solid films, 2007-04, Vol.515 (12), p.5008-5011

2007

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Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.132-134

2008

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Present status and future of crystalline silicon solar cells in Japan

Solar energy, 2006, Vol.80 (1), p.104-110

2006

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Electrical properties of GaAsN film grown by chemical beam epitaxy

Physica. B, Condensed matter, 2007-12, Vol.401, p.343-346

2007

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Characterization of carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates

Solar energy materials and solar cells, 2009-06, Vol.93 (6), p.936-940

2009

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Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction

Materials science forum, 2012-01, Vol.725, p.251-254

2012

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Flow modulation effect on N incorporation into GaAs(1-x)Nx films during chemical beam epitaxy growth

Journal of crystal growth, 2009-05, Vol.311 (10), p.2821-2824

2009

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Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Journal of applied physics, 2001-08, Vol.90 (3), p.1170-1178

2001

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Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells

Journal of crystal growth, 2005-02, Vol.275 (1), p.e1127-e1130

2005

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Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells

Physica. B, Condensed matter, 2006-04, Vol.376, p.626-629

2006

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Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

Journal of crystal growth, 2005-02, Vol.275 (1), p.e491-e494

2005

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Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas

Journal of crystal growth, 1995-01, Vol.147 (1-2), p.111-116

Ohshita, Y.

1995

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Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films

ECS journal of solid state science and technology, 2023-01, Vol.12 (1), p.15003

2023

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Influence of Mg Concentration on Structural, Optical and Electrical Properties of Epitaxial-Grown Mg-Doped C60 Thin Films

Journal of nano research, 2014-06, Vol.28, p.21-28

2014

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Identification of N-H related defects in GaAsN grown by chemical beam epitaxy

2010 35th IEEE Photovoltaic Specialists Conference, 2010, p.002120-002124

2010

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Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

Thin solid films, 2007-08, Vol.515 (22), p.8246-8249

2007

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Ni-silicide precursor for gate electrodes

Thin solid films, 2007-04, Vol.515 (12), p.4980-4982

2007

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Analysis of interface workfunction and process-induced damage of reactive-plasma-deposited ITO/SiO2/Si stack

Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition

Novel material for super high efficiency multi-junction solar cells

In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)

Study on defects and impurities in cast-grown polycrystalline silicon substrates for solar cells

Evaluation of quantum confinement effect in nanocrystal Si dot layer by Raman spectroscopy

(Invited) Potential and Activities of III-V/Si Tandem Solar Cells

Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy

Carbon incorporation process in GaAsN films grown by chemical beam epitaxy using MMHy or DMHy as the N source

Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers

Present status and future of crystalline silicon solar cells in Japan

Electrical properties of GaAsN film grown by chemical beam epitaxy

Characterization of carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates

Evaluation of Optical Properties for Nanocrystal Si Dot Layers Fabricated by CVD as a Function of Size Reduction

Flow modulation effect on N incorporation into GaAs(1-x)Nx films during chemical beam epitaxy growth

Role of the impurities in production rates of radiation-induced defects in silicon materials and solar cells

Chemical beam epitaxy of InGaAsN films for multi-junction tandem solar cells

Effects of thermal cycle annealing on reduction of defect density in lattice-mismatched InGaAs solar cells

Effects of defects and impurities on minority carrier lifetime in cast-grown polycrystalline silicon

Reactants in SiC chemical vapor deposition using CH3SiH3 as a source gas

Evaluation of Damage in Crystalline Silicon Substrate Induced by Plasma Enhanced Chemical Vapor Deposition of Amorphous Silicon Films

Influence of Mg Concentration on Structural, Optical and Electrical Properties of Epitaxial-Grown Mg-Doped C60 Thin Films

Identification of N-H related defects in GaAsN grown by chemical beam epitaxy

Chemical vapor deposition of NiSi using Ni(PF3)4 and Si3H8

Ni-silicide precursor for gate electrodes

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