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Narrow-band 400 nm MSM photodetectors using a thin InGaN layer on a GaN/sapphire structure

Physica status solidi. C, 2006-06, Vol.3 (6), p.2278-2282

2006

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Higher Picosecond Photoresponsivity Realized by Introducing Hole-Capturing Levels of Iron in GaAs

Japanese Journal of Applied Physics, 2001, Vol.40 (4R), p.2138-2142

2001

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Prospects in Complex Geometry: Proceedings of the 25th Taniguchi International Symposium Held in Katata, and the Conference Held in Kyoto, July 31 - August 9 1989

1991 edition., 2006

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Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal–Semiconductor–Metal Photodetector on Sapphire

Japanese Journal of Applied Physics, 2005-12, Vol.44 (12R), p.8441

2005

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Diffusion of Iron into GaAs from a Spin‐on Source

Journal of the Electrochemical Society, 1990-08, Vol.137 (8), p.2608-2611

1990

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Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4L), p.L435

2006

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Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire

Japanese Journal of Applied Physics, 2005-01, Vol.44 (5L), p.L623

2005

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GaAs homojunction phototransistor with minority carrier transport assisted by photo-generated carrier profile in the base

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors, 1997, p.479-482

1997

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Contactless excitation and measurement method for inspection of microstructures and thin films

Review of scientific instruments, 2002-07, Vol.73 (7), p.2651-2654

2002

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Contactless Measurement of Young's Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators

Japanese Journal of Applied Physics, 2004-03, Vol.43 (3R), p.1178

2004

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Splenic infarction in Letterer–Siwe disease

Pediatrics international, 2005-06, Vol.47 (3), p.329-332

2005

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Fast Micro-Photodetector for Shorter Wavelengths on Silicon-on-Insulator Structures

Japanese Journal of Applied Physics, 2002-06, Vol.41 (Part 2, No. 6B), p.L703-L705

2002

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High-voltage micro solar cell arrays of GaAs with output voltage up to 100 V

IEEE/LEOS International Conference on Optical MEMs, 2002, p.103-104

2002

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Formation of β-FeSi2 with electron beam evaporation

Electronics & communications in Japan. Part 2, Electronics, 2004-01, Vol.87 (1), p.9-15

2004

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Enhanced high-speed photoresponse by diffusion of iron into undoped semi-insulating GaAs

2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046), 2000, p.159-162

2000

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Signs and symptoms in straight back syndrome

Current therapeutic research, 1990-04, Vol.47 (4), p.673-682

1990

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Exacerbation of Psoriasis during Lithium Treatment

Journal of dermatology, 1989-02, Vol.16 (1), p.59-63

1989

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High-efficiency and high-power AlGaAs/ GaAs laser

IEEE journal of quantum electronics, 1983-06, Vol.19 (6), p.1002-1008

1983

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Triple-stripe phase-locked diode lasers emitting 100 mW CW with single-lobed far-field patterns

Electronics letters, 1985-08, Vol.21 (18), p.779-780

1985

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Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures

Japanese Journal of Applied Physics, 2002-08, Vol.41 (Part 2, No. 8B), p.L963-L965

2002

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Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs

Japanese Journal of Applied Physics, 2000-01, Vol.39 (1A), p.L13-L15

2000

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Phased array of AlGaAs multistripe index-guided lasers

Electronics letters, 1985-08, Vol.21 (18), p.780-781

1985

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A GaAs Micro Solar Cell with Output Voltage over 20 V

Japanese Journal of Applied Physics, 1999-12, Vol.38 (12R), p.6947

1999

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A picosecond photodetector on SOI structures for 0.4 /spl mu/m band

2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207), 2001, p.75-76

2001

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Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths

Japanese Journal of Applied Physics, 1998-09, Vol.37 (9R), p.4758

1998

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Narrow-band 400 nm MSM photodetectors using a thin InGaN layer on a GaN/sapphire structure

Higher Picosecond Photoresponsivity Realized by Introducing Hole-Capturing Levels of Iron in GaAs

Prospects in Complex Geometry: Proceedings of the 25th Taniguchi International Symposium Held in Katata, and the Conference Held in Kyoto, July 31 - August 9 1989

Comparison of Spectral Responses between Front- and Back-Incidence Configurations in GaN Metal–Semiconductor–Metal Photodetector on Sapphire

Diffusion of Iron into GaAs from a Spin‐on Source

Different Bias-Voltage Dependences of Photocurrent in Pt/InGaN/GaN and Pt/GaN Schottky Photodetectors on Sapphire

Low-Dark-Current Large-Area Narrow-Band Photodetector Using InGaN/GaN Layers on Sapphire

GaAs homojunction phototransistor with minority carrier transport assisted by photo-generated carrier profile in the base

Contactless excitation and measurement method for inspection of microstructures and thin films

Contactless Measurement of Young's Modulus Using Laser Beam Excitation and Detection of Vibration of Thin-Film Microresonators

Splenic infarction in Letterer–Siwe disease

Fast Micro-Photodetector for Shorter Wavelengths on Silicon-on-Insulator Structures

High-voltage micro solar cell arrays of GaAs with output voltage up to 100 V

Formation of β-FeSi2 with electron beam evaporation

Enhanced high-speed photoresponse by diffusion of iron into undoped semi-insulating GaAs

Signs and symptoms in straight back syndrome

Exacerbation of Psoriasis during Lithium Treatment

High-efficiency and high-power AlGaAs/ GaAs laser

Triple-stripe phase-locked diode lasers emitting 100 mW CW with single-lobed far-field patterns

Self-Aligned Formation of Porous Silicon Membranes Using Si Diaphragm Structures

Higher Resistivities Obtained by Iron-Diffusion into Undoped Semi-Insulating GaAs

Phased array of AlGaAs multistripe index-guided lasers

A GaAs Micro Solar Cell with Output Voltage over 20 V

A picosecond photodetector on SOI structures for 0.4 /spl mu/m band

Asymmetric Photocurrent Characteristics in GaAs/AlGaAs Phototransistors with Very Short Carrier-Diffusion Lengths

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