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Dielectric properties of wurtzite and zincblende structure gallium nitride

The Journal of physics and chemistry of solids, 1997-06, Vol.58 (6), p.913-918

1997

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Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

IEEE transactions on electron devices, 1997-04, Vol.44 (4), p.535-544

1997

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Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride

MRS proceedings, 1997, Vol.468, Article 457

1997

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Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

MRS proceedings, 1996, Vol.423, Article 45

1996

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Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Journal of applied physics, 1995-07, Vol.78 (2), p.1033-1038

1995

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Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

Journal of applied physics, 1997-06, Vol.81 (12), p.7827-7834

1997

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Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

Journal of applied physics, 1997-01, Vol.81 (2), p.726-733

1997

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DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE

The Journal of physics and chemistry of solids, 1997-06, Vol.58 (6), p.913-918

1997

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Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Journal of applied physics, 1996-10, Vol.80 (8), p.4429-4436

1996

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Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN

Journal of applied physics, 1996-06, Vol.79 (11), p.8838-8840

1996

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A digital-feedback pre-distortion technique for integrated high-voltage ultrasound transmitting power amplifiers

2011 IEEE International Ultrasonics Symposium, 2011, p.450-453

2011

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Dielectric Functions of Wurtzite and Zincblende Structure GaN

MRS proceedings, 1995, Vol.395, Article 601

1995

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Shallow Impurity States in Wurtzite and Zinc Blende Structure GaN

MRS proceedings, 1996, Vol.449, Article 935

1996

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Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure

MRS proceedings, 1995, Vol.395, Article 479

1995

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Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

Journal of applied physics, 1995-01, Vol.77 (1), p.225-232

1995

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Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

Journal of applied physics, 1994-09, Vol.76 (6), p.3542-3551

1994

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A fail-safe ESD protection circuit with 230 fF linear capacitance for high-speed/high-precision 0.18 /spl mu/m CMOS I/O application

Digest. International Electron Devices Meeting, 2002, p.349-352

2002

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Reliability assessment of multiple quantum well avalanche photodiodes

Proceedings of 1995 IEEE International Reliability Physics Symposium, 1995, p.200-204

1995

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Effect of surface treatments and universal adhesive application on the microshear bond strength of CAD/CAM materials

The journal of advanced prosthodontics, 2020, Vol.12 (1), p.22-32

2020

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Qualitative study of UK health and care professionals to determine resources and processes that can support actions to improve quality of data used to address and monitor health inequalities

BMJ open, 2024-09, Vol.14 (9), p.e084352

2024

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Influence of surface treatments and adhesive protocols on repair bond strength of glass‐matrix and resin‐matrix CAD / CAM ceramics

Journal of esthetic and restorative dentistry, 2023-12, Vol.35 (8), p.1322-1331

2023

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The role of pentraxin 3 and oxidative status in the prognosis of multiple myeloma

Journal of investigative medicine, 2024-04, Vol.72 (4), p.333-340

2024

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The first involved joints and associated factors in patients with rheumatoid arthritis

Archives of rheumatology, 2024-06, Vol.39 (2), p.274-284

2024

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Adhesive Performance of Resin Cement to Glass-Ceramic and Polymer-Based Ceramic CAD/CAM Materials after Applying Self-Etching Ceramic Primer or Different Surface Treatments

Materials, 2023-12, Vol.17 (1), p.2

2023

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Characterization of Klebsiella pneumoniae Coproducing KPC and NDM-1 Carbapenemases from Turkey

Microbial drug resistance (Larchmont, N.Y.), 2020-02, Vol.26 (2), p.118-125

2020

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Dielectric properties of wurtzite and zincblende structure gallium nitride

Effect of doping on the reliability of GaAs multiple quantum well avalanche photodiodes

Comparison of Electron and Hole Initiated Impact Ionization in Zincblende and Wurtzite Phase Gallium Nitride

Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Theory of hole initiated impact ionization in bulk zincblende and wurtzite GaN

Monte Carlo calculation of electron initiated impact ionization in bulk zinc-blende and wurtzite GaN

DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE

Hole transport properties of bulk zinc-blende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

Calculation of the wave-vector-dependent interband impact-ionization transition rate in wurtzite and zinc-blende phases of bulk GaN

A digital-feedback pre-distortion technique for integrated high-voltage ultrasound transmitting power amplifiers

Dielectric Functions of Wurtzite and Zincblende Structure GaN

Shallow Impurity States in Wurtzite and Zinc Blende Structure GaN

Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN including a Pseudopotential Calculated Band Structure

Theoretical study of hole initiated impact ionization in bulk silicon and GaAs using a wave-vector-dependent numerical transition rate formulation within an ensemble Monte Carlo calculation

Theoretical investigation of wave-vector-dependent analytical and numerical formulations of the interband impact-ionization transition rate for electrons in bulk silicon and GaAs

A fail-safe ESD protection circuit with 230 fF linear capacitance for high-speed/high-precision 0.18 /spl mu/m CMOS I/O application

Reliability assessment of multiple quantum well avalanche photodiodes

Effect of surface treatments and universal adhesive application on the microshear bond strength of CAD/CAM materials

Qualitative study of UK health and care professionals to determine resources and processes that can support actions to improve quality of data used to address and monitor health inequalities

Influence of surface treatments and adhesive protocols on repair bond strength of glass‐matrix and resin‐matrix CAD / CAM ceramics

The role of pentraxin 3 and oxidative status in the prognosis of multiple myeloma

The first involved joints and associated factors in patients with rheumatoid arthritis

Adhesive Performance of Resin Cement to Glass-Ceramic and Polymer-Based Ceramic CAD/CAM Materials after Applying Self-Etching Ceramic Primer or Different Surface Treatments

Characterization of Klebsiella pneumoniae Coproducing KPC and NDM-1 Carbapenemases from Turkey

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