UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Push the flash floating gate memories toward the future low energy application

Solid-state electronics, 2013-01, Vol.79, p.210-217

2013

Volltextzugriff (PDF)

MOSFET layout modifications for hump effect removal

Microelectronic engineering, 2013-09, Vol.109, p.168-171

2013

Volltextzugriff (PDF)

Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories

Microelectronics and reliability, 2014-09, Vol.54 (9-10), p.2262-2265

2014

Volltextzugriff (PDF)

Data retention under gate stress on a NVM array

Solid-state electronics, 2012-12, Vol.78, p.80-86

2012

Volltextzugriff (PDF)

Access resistor modelling for EEPROM’s retention test vehicle

Microelectronics and reliability, 2013-09, Vol.53 (9-11), p.1218-1223

2013

Volltextzugriff (PDF)

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

IEEE transactions on electron devices, 1998-04, Vol.45 (4), p.904-911

1998

Volltextzugriff (PDF)

Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress

Microelectronics and reliability, 2011-09, Vol.51 (9-11), p.1561-1563

2011

Volltextzugriff (PDF)

Threshold voltage asymmetric degradation on octagonal MOSFET during HCI stress

Electronics letters, 2012-07, Vol.48 (14), p.879-881

2012

Volltextzugriff (PDF)

Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

Solid-state electronics, 2012-12, Vol.78, p.151-155

2012

Volltextzugriff (PDF)

Improved Performance of Silicon Nanocrystal Memories for Application Working Over a Wide Range of Temperature

ECS transactions, 2013-05, Vol.53 (4), p.129-139

2013

Volltextzugriff (PDF)

An evaluation of the extrinsic cells number in a memory array using cross-correlation products and deconvolution: an instance of a microelectronics experimental inverse problem

Inverse problems in science and engineering, 2011-12, Vol.19 (8), p.1043-1062

2011

Volltextzugriff (PDF)

Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications

Microelectronics and reliability, 2008-08, Vol.48 (8), p.1318-1321

2008

Volltextzugriff (PDF)

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1373-1377

2007

Volltextzugriff (PDF)

Effect of ions presence in the SiOCH inter metal dielectric structure

2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2013, p.218-221

2013

Volltextzugriff (PDF)

Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

2013 IEEE International Conference on Solid Dielectrics (ICSD), 2013, p.587-590

2013

Volltextzugriff (PDF)

A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

IEEE transactions on electron devices, 1998-02, Vol.45 (2), p.472-481

1998

Volltextzugriff (PDF)

Degradation mechanism during gate stress at high electrical field on high voltage MOSFET for non-volatile memory applications

2014 IEEE International Integrated Reliability Workshop Final Report (IIRW), 2014, p.147-150

2014

Volltextzugriff (PDF)

EEPROM tunnel oxide lifetime reliability prediction based on fast electrical stress tests

Electronics letters, 2010-11, Vol.46 (23), p.1568-1569

2010

Volltextzugriff (PDF)

Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions

Microelectronics and reliability, 2007-09, Vol.47 (9), p.1322-1329

2007

Volltextzugriff (PDF)

Charge loss activation during non-volatiles memory data retention

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.377-380

2012

Volltextzugriff (PDF)

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown

Microelectronics and reliability, 2008-03, Vol.48 (3), p.335-341

2008

Volltextzugriff (PDF)

Effect of AC stress on oxide TDDB and trapped charge in interface states

2014 International Symposium on Integrated Circuits (ISIC), 2014, p.416-419

2014

Volltextzugriff (PDF)

An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test

Solid-state electronics, 2008-10, Vol.52 (10), p.1550-1554

2008

Volltextzugriff (PDF)

How to improve the silicon nanocrystal memory cell performances for low power applications

CAS 2012 (International Semiconductor Conference), 2012, Vol.1, p.103-106

2012

Volltextzugriff (PDF)

Relaxation effect on cycling on NOR flash memories

2015 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2015, p.613-616

2015

Volltextzugriff (PDF)

1 – 25 von 336

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(225)
Mit Volltextzugriff
(264)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Französisch
(179)
Englisch
(159)

Erscheinungsjahr

n.n

Thema

Science & Technology
(114)
Humans
(63)
Technology
(57)
Life Sciences & Biomedicine
(52)
Physical Sciences
(47)
Engineering
(41)
Physics
(35)
Engineering, Electrical & Electronic
(34)
Sciences Biologiques Et Medicales
(34)
Male
(29)
Physics, Applied
(29)
Female
(27)
Sciences Medicales
(27)
Biological And Medical Sciences
(22)
Applied Sciences
(20)
Child
(20)
Exact Sciences And Technology
(20)
Infant
(20)
Animals
(19)
Life Sciences
(18)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Push the flash floating gate memories toward the future low energy application

MOSFET layout modifications for hump effect removal

Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories

Data retention under gate stress on a NVM array

Access resistor modelling for EEPROM’s retention test vehicle

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress

Threshold voltage asymmetric degradation on octagonal MOSFET during HCI stress

Non volatile memory reliability evaluation based on oxide defect generation rate during stress and retention test

Improved Performance of Silicon Nanocrystal Memories for Application Working Over a Wide Range of Temperature

An evaluation of the extrinsic cells number in a memory array using cross-correlation products and deconvolution: an instance of a microelectronics experimental inverse problem

Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications

A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories

Effect of ions presence in the SiOCH inter metal dielectric structure

Dynamic behavior of silicon nanocrystal memories during the hot carrier injection

A new model for the field dependence of intrinsic and extrinsic time-dependent dielectric breakdown

Degradation mechanism during gate stress at high electrical field on high voltage MOSFET for non-volatile memory applications

EEPROM tunnel oxide lifetime reliability prediction based on fast electrical stress tests

Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions

Charge loss activation during non-volatiles memory data retention

Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO2 thin oxides stressed to hard breakdown

Effect of AC stress on oxide TDDB and trapped charge in interface states

An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test

How to improve the silicon nanocrystal memory cell performances for low power applications

Relaxation effect on cycling on NOR flash memories

Suchergebnisse filtern