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Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Journal of crystal growth, 2008-11, Vol.310 (23), p.5154-5157

2008

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Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

Journal of crystal growth, 2011-01, Vol.315 (1), p.188-191

2011

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On improving the radiation resistance of gallium oxide for space applications

Acta astronautica, 2021-03, Vol.180, p.125-129

2021

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Development of a fiber laser diode module in the spectral range of 445–450 nm with an output optical power of more than 100 W

Journal of optical technology, 2019-04, Vol.86 (4), p.255

2019

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Wireless local data transmission network through LED lighting compatible with IEEE 802.11 protocol communication systems

Journal of physics. Conference series, 2019-06, Vol.1236 (1), p.12085

2019

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Electroluminescence at 7 terahertz from phosphorus donors in silicon

Applied physics letters, 2004-07, Vol.85 (1), p.22-24

2004

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Charge Carrier Traps in a Bulk Gallium Oxide β-Ga2O3

Physics of the solid state, 2021-04, Vol.63 (4), p.544-549

2021

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Threading dislocation density reduction in two-stage growth of GaN layers

Physica status solidi. A, Applications and materials science, 2006-03, Vol.203 (4), p.R25-R27

2006

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Errors in simplex data transmission channel based on visible light communication

Journal of physics. Conference series, 2019-10, Vol.1326 (1), p.12030

2019

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Signal processing scheme for error control in visible light communication data transmission system

Journal of physics. Conference series, 2019-12, Vol.1410 (1), p.12098

2019

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Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers

Physica status solidi. A, Applications and materials science, 2006-08, Vol.203 (10), p.R76-R78

2006

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Spectrometric method for measuring light absorption by plant leaves

Journal of physics. Conference series, 2018-12, Vol.1135 (1), p.12013

2018

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Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals

Technical physics letters, 2021-03, Vol.47 (3), p.218-221

2021

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Towards Si1−xGex quantum-well resonant-state terahertz laser

Applied physics letters, 2001-12, Vol.79 (24), p.3909-3911

2001

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High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics

Journal of physics. Conference series, 2017-11, Vol.917 (5), p.52029

2017

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Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Journal of crystal growth, 2008-11, Vol.310 (23), p.5162-5165

2008

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Enhancement of near-UV GaN LED light extraction efficiency by GaN sapphire template patterning

Semiconductor science and technology, 2012-08, Vol.27 (8), p.82002

2012

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Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Journal of crystal growth, 2007-03, Vol.300 (2), p.324-329

2007

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Model of mode-locked quantum-well semiconductor laser based on InGaAs InGaAlAs InP heterostructure

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12079

2016

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Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Journal of crystal growth, 2012-04, Vol.344 (1), p.59-64

2012

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Effect of growth conditions on electrical properties of Mg-doped p-GaN

Journal of crystal growth, 2007, Vol.298, p.811-814

2007

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The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

Journal of crystal growth, 2007, Vol.298, p.740-743

2007

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Modelling and optimization of electric current spreading in III-nitride LEDs

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.1105-1108

2012

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THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

International journal of modern physics. B, Condensed matter physics, statistical physics, applied physics, 2005-08, Vol.19 (21), p.3353-3377

2005

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An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4911-4915

2009

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Enhanced electroluminescence in 405 nm InGaN/GaN LEDs by optimized electron blocking layer

Void shape control in GaN re-grown on hexagonally patterned mask-less GaN

On improving the radiation resistance of gallium oxide for space applications

Development of a fiber laser diode module in the spectral range of 445–450 nm with an output optical power of more than 100 W

Wireless local data transmission network through LED lighting compatible with IEEE 802.11 protocol communication systems

Electroluminescence at 7 terahertz from phosphorus donors in silicon

Charge Carrier Traps in a Bulk Gallium Oxide β-Ga2O3

Threading dislocation density reduction in two-stage growth of GaN layers

Errors in simplex data transmission channel based on visible light communication

Signal processing scheme for error control in visible light communication data transmission system

Multistep method for threading dislocation density reduction in MOCVD grown GaN epilayers

Spectrometric method for measuring light absorption by plant leaves

Elemental and Structural Mapping of Czochralski-Grown Bulk (AlxGa1 –x)2O3 Crystals

Towards Si1−xGex quantum-well resonant-state terahertz laser

High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics

Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs

Enhancement of near-UV GaN LED light extraction efficiency by GaN sapphire template patterning

Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition

Model of mode-locked quantum-well semiconductor laser based on InGaAs InGaAlAs InP heterostructure

Analysis of threading dislocations in void shape controlled GaN re-grown on hexagonally patterned mask-less GaN

Effect of growth conditions on electrical properties of Mg-doped p-GaN

The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency

Modelling and optimization of electric current spreading in III-nitride LEDs

THE MONTE CARLO METHOD APPLIED TO CARRIER TRANSPORT IN Si/SiGe QUANTUM WELLS

An investigation of structural properties of GaN films grown on patterned sapphire substrates by MOVPE

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