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Optical emission of a strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers

Physical review letters, 2013-04, Vol.110 (17), p.177404-177404, Article 177404

2013

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Effect of heat treatment on fluorescence characteristics of HPHT and detonation nanodiamonds

Applied nanoscience, 2022-11, Vol.12 (11), p.3449-3457

2022

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Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition

Nano letters, 2010-08, Vol.10 (8), p.3052-3056

2010

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Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

Physical review. B, 2018-05, Vol.97 (19), Article 195304

2018

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Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

Applied physics letters, 2012-12, Vol.101 (23)

2012

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Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface

Nanotechnology, 2011-02, Vol.22 (5), p.055706-055706

2011

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Spatially resolved thermoreflectance study of facet temperature in quantum cascade lasers

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (7), p.1227-1232

2005

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Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures

Thin solid films, 2002-06, Vol.412 (1), p.114-121

2002

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Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems

Physical review. B, Condensed matter and materials physics, 2012-01, Vol.85 (3), Article 035432

2012

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Photoreflectance spectroscopy as a powerful tool for the investigation of GaN–AlGaN quantum well structures

Solid state communications, 1999-01, Vol.109 (9), p.567-571

1999

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Dual Contribution to the Stokes Shift in InGaN-GaN Quantum Wells

Physica status solidi. B. Basic research, 2001-11, Vol.228 (1), p.111-114

2001

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Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE

Thin solid films, 2002-06, Vol.412 (1), p.107-113

2002

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MBE growth of planar microcavities with distributed Bragg reflectors

Thin solid films, 2000-05, Vol.367 (1-2), p.290-294

2000

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Resonant Cavity Enhanced Photonic Devices

Acta physica Polonica, A, 2002-01, Vol.101 (1), p.105-118

2002

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Band Alignment Tailoring of InAs 1− x Sb x /GaAs Quantum Dots: Control of Type I to Type II Transition

Nano letters, 2010-08, Vol.10 (8), p.3052-3056

2010

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Effect of oxygen implantation on ionoluminescence of porous silicon

Journal of luminescence, 1998-12, Vol.80 (1), p.187-192

1998

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High speed optical modulation in Ge quantum wells using quantum confined stark effect

Frontiers of Optoelectronics, 2012-03, Vol.5 (1), p.82-89

2012

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Photoreflectance Spectroscopy Investigation of GaN-AlGaN Quantum Well Structures

physica status solidi (b), 1999-11, Vol.216 (1), p.221-225

1999

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Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures

Acta physica Polonica, A, 1998-09, Vol.94 (3), p.463-467

1998

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Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study

Acta physica Polonica, A, 1997-11, Vol.92 (5), p.935-939

1997

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The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure

High pressure research, 2000-09, Vol.18 (1-6), p.35-39

2000

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Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Applied physics letters, 1999-05, Vol.74 (22), p.3353-3355

1999

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Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC

Physica status solidi. A, Applications and materials science, 2005-05, Vol.202 (7), p.1300-1307

2005

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Band Alignment Tailoring of InAs1−x Sb x /GaAs Quantum Dots: Control of Type I to Type II Transition

Nano letters, 2010-08, Vol.10 (8), p.3052-3056

2010

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Photoreflectance Study of GaN/AlGaN Structures

Physica status solidi. C, 2003 (1), p.491-494

2003

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Optical emission of a strained direct-band-gap Ge quantum well embedded inside InGaAs alloy layers

Effect of heat treatment on fluorescence characteristics of HPHT and detonation nanodiamonds

Band Alignment Tailoring of InAs1-xSbx/GaAs Quantum Dots: Control of Type I to Type II Transition

Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies

Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

Lateral interdot carrier transfer in an InAs quantum dot cluster grown on a pyramidal GaAs surface

Spatially resolved thermoreflectance study of facet temperature in quantum cascade lasers

Photoluminescence mapping and angle-resolved photoluminescence of MBE-grown InGaAs/GaAs RC LED and VCSEL structures

Coulomb-induced emission dynamics and self-consistent calculations of type-II Sb-containing quantum dot systems

Photoreflectance spectroscopy as a powerful tool for the investigation of GaN–AlGaN quantum well structures

Dual Contribution to the Stokes Shift in InGaN-GaN Quantum Wells

Investigations of optical properties of active regions in vertical cavity surface emitting lasers grown by MBE

MBE growth of planar microcavities with distributed Bragg reflectors

Resonant Cavity Enhanced Photonic Devices

Band Alignment Tailoring of InAs 1− x Sb x /GaAs Quantum Dots: Control of Type I to Type II Transition

Effect of oxygen implantation on ionoluminescence of porous silicon

High speed optical modulation in Ge quantum wells using quantum confined stark effect

Photoreflectance Spectroscopy Investigation of GaN-AlGaN Quantum Well Structures

Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures

Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study

The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure

Photoreflectance investigations of the bowing parameter in AlGaN alloys lattice-matched to GaN

Optical study of AlGaN/GaN based HEMT structures grown on sapphire and SiC

Band Alignment Tailoring of InAs1−x Sb x /GaAs Quantum Dots: Control of Type I to Type II Transition

Photoreflectance Study of GaN/AlGaN Structures

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