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Integration of SiOC air gaps in copper interconnects

Microelectronic engineering, 2003-11, Vol.70 (2), p.274-279

2003

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Fabrication and structure of epitaxial Er silicide films on (111) Si

Applied physics letters, 1989-05, Vol.54 (22), p.2198-2200

1989

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Low pressure microwave electron cyclotron resonance plasma deposition of amorphous Ta2O5 films

Applied physics letters, 1994-10, Vol.65 (16), p.2021-2023

1994

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Millitorr range PECVD of a-SiO2 films using TEOS and oxygen

Thin solid films, 1994-04, Vol.241 (1-2), p.251-254

1994

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Anodic Oxidation of Porous Silicon Layers Formed on Lightly p‐Doped Substrates

Journal of the Electrochemical Society, 1991-11, Vol.138 (11), p.3450-3456

1991

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Preparation of copper thin films at ambient temperature by microwave plasma-enhanced chemical vapor deposition from the copper (II) acetylacetonate-argon-hydrogen system

Journal of applied physics, 1991-10, Vol.70 (7), p.3862-3866

1991

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Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties

Applied surface science, 1989-09, Vol.38 (1), p.171-177

1989

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Resist degradation under plasma exposure : synergistic effects of ion bombardment

Journal of applied physics, 1991-02, Vol.69 (3), p.1697-1702

1991

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Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system

Thin solid films, 1994-04, Vol.241 (1), p.301-304

1994

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Tungsten films produced by selective deposition onto silicon wafers

Thin solid films, 1986-10, Vol.143 (3), p.259-267

1986

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Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Journal of applied physics, 1987-10, Vol.62 (8), p.3458-3461

1987

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Influence of epitaxy on the low temperature silicon diffusion through gold layers

Applied surface science, 1992, Vol.56, p.434-437

1992

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Monitoring of the thermal annealing of HDP-Si oxides by positron annihilation and thermal desorption spectrometry

Microelectronic engineering, 1997, Vol.33 (1), p.357-362

1997

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Adhesion of LPCVD WSix/W bilayers on oxide films

Applied surface science, 1991-11, Vol.53, p.69-73

1991

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High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing

Applied physics letters, 1988-03, Vol.52 (10), p.819-821

1988

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Silicide formation in metal/Si structures and diffusion barrier properties of CVD tungsten films

Journal of materials research, 1989-02, Vol.4 (1), p.156-162

1989

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Effective elastic constants of thin-film tungsten-silicide from surface acoustic wave analysis

Applied physics letters, 1987-01, Vol.50 (2), p.74-76

1987

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The role of self diffusion in the dry development and plasma durability of polymers

Microelectronic engineering, 1991-03, Vol.13 (1-4), p.57-60

1991

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Correlation between the elastic and structural properties of thin-film tungsten silicide layers from surface acoustic wave analysis

Applied physics letters, 1987-11, Vol.51 (20), p.1591-1593

1987

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Leakage mechanism for tungsten/chromium metallized silicon p/n junctions

Applied physics letters, 1989-06, Vol.54 (24), p.2429-2431

1989

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Irreversible and reversible annealing of paramagnetic oxygen vacancies (E1' centers) in oxygen-implanted amorphous SiO2

Journal of applied physics, 1984-01, Vol.56 (6), p.1572-1576

1984

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Fabrication d'un réseau d'interconnexions haute densité pour modules avancés multi-puces par une technique de lift-off

Journal de physique. III (Les Ulis), 1993-04, Vol.3 (4), p.793-804

1993

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The influence of an aluminum overlayer on the interaction of tungsten films with silicon substrates

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1988-05, Vol.6 (3), p.817-824

1988

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Raman signal vs. preparation conditions of C-implanted-and-excimer-laser-annealed Cu thin films

Diamond and related materials, 1993-04, Vol.2 (5), p.746-752

1993

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Refractory Metal Encapsulation in Copper Wiring

MRS proceedings, 1994, Vol.337, Article 225

1994

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Integration of SiOC air gaps in copper interconnects

Fabrication and structure of epitaxial Er silicide films on (111) Si

Low pressure microwave electron cyclotron resonance plasma deposition of amorphous Ta2O5 films

Millitorr range PECVD of a-SiO2 films using TEOS and oxygen

Anodic Oxidation of Porous Silicon Layers Formed on Lightly p‐Doped Substrates

Preparation of copper thin films at ambient temperature by microwave plasma-enhanced chemical vapor deposition from the copper (II) acetylacetonate-argon-hydrogen system

Epitaxial erbium silicide films on Si(111) surface: Fabrication, structure, and electrical properties

Resist degradation under plasma exposure : synergistic effects of ion bombardment

Preparation of low resistivity tungsten thin films deposited by microwave-plasma-enhanced chemical vapour deposition from the tungsten hexafluoride-hydrogen system

Tungsten films produced by selective deposition onto silicon wafers

Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Influence of epitaxy on the low temperature silicon diffusion through gold layers

Monitoring of the thermal annealing of HDP-Si oxides by positron annihilation and thermal desorption spectrometry

Adhesion of LPCVD WSix/W bilayers on oxide films

High quality silicon-on-insulator structure formed by oxygen implantation and lamp annealing

Silicide formation in metal/Si structures and diffusion barrier properties of CVD tungsten films

Effective elastic constants of thin-film tungsten-silicide from surface acoustic wave analysis

The role of self diffusion in the dry development and plasma durability of polymers

Correlation between the elastic and structural properties of thin-film tungsten silicide layers from surface acoustic wave analysis

Leakage mechanism for tungsten/chromium metallized silicon p/n junctions

Irreversible and reversible annealing of paramagnetic oxygen vacancies (E1' centers) in oxygen-implanted amorphous SiO2

Fabrication d'un réseau d'interconnexions haute densité pour modules avancés multi-puces par une technique de lift-off

The influence of an aluminum overlayer on the interaction of tungsten films with silicon substrates

Raman signal vs. preparation conditions of C-implanted-and-excimer-laser-annealed Cu thin films

Refractory Metal Encapsulation in Copper Wiring

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