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Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.233-244

2008

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Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

IEEE transactions on electron devices, 2006-05, Vol.53 (5), p.1142-1152

2006

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High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1961-1969

2003

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A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2164-2173

2007

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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1245-1253

2004

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Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3041-3048

2009

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Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

IEEE transactions on electron devices, 2006-09, Vol.53 (9), p.2296-2305

2006

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Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs

IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1156-1163

2004

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Test chip for the development and evaluation of sensors for measuring stress in metal interconnects

IEEE transactions on semiconductor manufacturing, 2005-05, Vol.18 (2), p.255-261

2005

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4H-SiC rectifiers with dual metal planar Schottky contacts

IEEE transactions on electron devices, 2002-05, Vol.49 (5), p.947-949

2002

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Oxygen vacancy migration in compressively strained SrTiO3

Journal of applied physics, 2013-01, Vol.113 (2)

2013

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Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

IEEE electron device letters, 2004-05, Vol.25 (5), p.334-336

2004

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Impact of tensile strain on the oxygen vacancy migration in SrTiO3: Density functional theory calculations

Journal of applied physics, 2013-06, Vol.113 (22)

2013

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Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Microelectronic engineering, 2009-03, Vol.86 (3), p.218-223

2009

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Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs

IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1156-1163

2004

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Performance Enhancements in Scaled Strained-SiGe pMOSFETs With [Formula Omitted] Gate Stacks

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2277

2009

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Using Piezoresistance Model With C- R Conversion for Modeling of Strain-Induced Mobility

IEEE electron device letters, 2008-09, Vol.29 (9), p.1062-1064

2008

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Performance Enhancements in Scaled Strained-SiGe pMOSFETs With \hbox/\hbox Gate Stacks

IEEE transactions on electron devices, 2009-10, Vol.56 (10), p.2277-2284

2009

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The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures

Surface & coatings technology, 2005-11, Vol.200 (5), p.1755-1760

2005

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High temperature operation of GaAs based FETs

Solid-state electronics, 1995-02, Vol.38 (2), p.339-343

1995

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Modeling of the Threshold Voltage in Strained Si/Si1 - x Gex/Si1 - yGey(x > or = y) CMOS Architectures

IEEE transactions on electron devices, 2007-11, Vol.54 (11), p.3040

2007

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Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Solid-state electronics, 2003-08, Vol.47 (8), p.1289-1295

2003

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Using Piezoresistance Model With [Formula Omitted]- [Formula Omitted] Conversion for Modeling of Strain-Induced Mobility

IEEE electron device letters, 2008-09, Vol.29 (9), p.1062-1064

2008

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Insight Into the Aggravated Lifetime Reliability in Advanced MOSFETs With Strained-Si Channels on SiGe Strain-Relaxed Buffers Due to Self-Heating

IEEE transactions on electron devices, 2008-06, Vol.55 (6), p.1568-1573

2008

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Strained Si MOSFETs on relaxed SiGe platforms: performance and challenges

Solid-state electronics, 2004-08, Vol.48 (8), p.1407-1416

2004

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Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

A Semianalytical Description of the Hole Band Structure in Inversion Layers for the Physically Based Modeling of pMOS Transistors

Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

Improved Analog Performance in Strained-Si MOSFETs Using the Thickness of the Silicon-Germanium Strain-Relaxed Buffer as a Design Parameter

Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

Optimization of Alloy Composition for High-Performance Strained-Si–SiGe N-Channel MOSFETs

Test chip for the development and evaluation of sensors for measuring stress in metal interconnects

4H-SiC rectifiers with dual metal planar Schottky contacts

Oxygen vacancy migration in compressively strained SrTiO3

Temperature dependence of submicrometer strained-Si surface channel n-type MOSFETs in DT mode

Impact of tensile strain on the oxygen vacancy migration in SrTiO3: Density functional theory calculations

Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Optimization of alloy composition for high-performance strained-Si-SiGeN-channel MOSFETs

Performance Enhancements in Scaled Strained-SiGe pMOSFETs With [Formula Omitted] Gate Stacks

Using Piezoresistance Model With C- R Conversion for Modeling of Strain-Induced Mobility

Performance Enhancements in Scaled Strained-SiGe pMOSFETs With \hbox/\hbox Gate Stacks

The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures

High temperature operation of GaAs based FETs

Modeling of the Threshold Voltage in Strained Si/Si1 - x Gex/Si1 - yGey(x > or = y) CMOS Architectures

Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Using Piezoresistance Model With [Formula Omitted]- [Formula Omitted] Conversion for Modeling of Strain-Induced Mobility

Insight Into the Aggravated Lifetime Reliability in Advanced MOSFETs With Strained-Si Channels on SiGe Strain-Relaxed Buffers Due to Self-Heating

Strained Si MOSFETs on relaxed SiGe platforms: performance and challenges

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