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Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN

Applied physics letters, 2017-07, Vol.111 (5)

2017

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Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Band structure modulation in MoS2 multilayers and heterostructures through electric field and strain

Computational materials science, 2016-02, Vol.112, p.377-382

2016

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Temperature-dependent phonon shifts in monolayer MoS2

Applied physics letters, 2013-08, Vol.103 (9)

2013

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Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide

ACS nano, 2014-08, Vol.8 (8), p.7930-7937

2014

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Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride

ACS nano, 2016-03, Vol.10 (3), p.3580-3588

2016

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Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Applied physics letters, 2013-05, Vol.102 (19)

2013

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Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

Journal of materials science, 2014-10, Vol.49 (19), p.6762-6771

2014

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Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN

2d materials, 2018-10, Vol.5 (4)

2018

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Universality of Zener tunneling in homojunction p - n diodes

Journal of applied physics, 2010-07, Vol.108 (2), p.024501-024501-4

2010

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A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures

Journal of applied physics, 2014-07, Vol.116 (2)

2014

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Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS 2 and GaN

2d materials, 2018-08, Vol.5 (4), p.45016

2018

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Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering

Journal of computational electronics, 2007-09, Vol.6 (1-3), p.81-84

2007

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Theoretical study on strain induced variations in electronic properties of 2 H -MoS2 bilayer sheets

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Edge effects on band gap energy in bilayer 2 H -MoS2 under uniaxial strain

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Thomas–Fermi approximation for a two-dimensional electron gas at low temperatures

Journal of applied physics, 2004-06, Vol.95 (12), p.7990-7997

2004

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Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2116-2136

2007

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Erratum: “Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain” [J. Appl. Phys. 117, 244303 (2015)]

Journal of applied physics, 2015-11, Vol.118 (18)

2015

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Erratum: “Edge effects on band gap energy in bilayer 2 H -MoS2 under uniaxial strain” [J. Appl. Phys. 117 , 244303 (2015)]

Journal of applied physics, 2015-11, Vol.118 (18)

2015

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Edge effects on band gap energy in bilayer 2H-MoS{sub 2} under uniaxial strain

Journal of applied physics, 2015-06, Vol.117 (24)

2015

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Theoretical study on strain-induced variations in electronic properties of monolayer MoS sub(2)

Journal of materials science, 2014-10, Vol.49 (19), p.6762-6771

2014

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Theoretical study on strain-induced variations in electronic properties of monolayer Mo[S.sub.2]

Journal of materials science, 2014-10, Vol.49 (19), p.6762

2014

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Theoretical study on strain induced variations in electronic properties of 2H-MoS{sub 2} bilayer sheets

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-09, Vol.31 (5)

2013

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Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN

Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain

Band structure modulation in MoS2 multilayers and heterostructures through electric field and strain

Temperature-dependent phonon shifts in monolayer MoS2

Electrical Transport Properties of Polycrystalline Monolayer Molybdenum Disulfide

Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride

Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

Theoretical study on strain-induced variations in electronic properties of monolayer MoS2

Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN

Universality of Zener tunneling in homojunction p - n diodes

A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0.53Ga0.47As capacitor structures

Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS 2 and GaN

Electron mobility in silicon and germanium inversion layers: The role of remote phonon scattering

Theoretical study on strain induced variations in electronic properties of 2 H -MoS2 bilayer sheets

Edge effects on band gap energy in bilayer 2 H -MoS2 under uniaxial strain

Thomas–Fermi approximation for a two-dimensional electron gas at low temperatures

Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

Erratum: “Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain” [J. Appl. Phys. 117, 244303 (2015)]

Erratum: “Edge effects on band gap energy in bilayer 2 H -MoS2 under uniaxial strain” [J. Appl. Phys. 117 , 244303 (2015)]

Edge effects on band gap energy in bilayer 2H-MoS{sub 2} under uniaxial strain

Theoretical study on strain-induced variations in electronic properties of monolayer MoS sub(2)

Theoretical study on strain-induced variations in electronic properties of monolayer Mo[S.sub.2]

Theoretical study on strain induced variations in electronic properties of 2H-MoS{sub 2} bilayer sheets

Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system

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