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Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide

Journal of applied physics, 2005-04, Vol.97 (8), p.083709-083709-7

2005

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Divergence in ectomycorrhizal communities with foreign Douglas-fir populations and implications for assisted migration

Ecological applications, 2012-03, Vol.22 (2), p.550-560

2012

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Oxygen vacancy migration in compressively strained SrTiO3

Journal of applied physics, 2013-01, Vol.113 (2)

2013

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Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

Journal of applied physics, 2014-10, Vol.116 (15)

2014

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Use of response functions in selecting lodgepole pine populations for future climates

Global change biology, 2006-12, Vol.12 (12), p.2404-2416

2006

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A model for capacitance reconstruction from measured lossy MOS capacitance–voltage characteristics

Semiconductor science and technology, 2003-02, Vol.18 (2), p.82-87

2003

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Defect identification in strained Si/SiGe heterolayers for device applications

Journal of physics. D, Applied physics, 2009-09, Vol.42 (17), p.175306-175306 (6)

2009

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The use of Raman spectroscopy to identify strain and strain relaxation in strained Si/SiGe structures

Surface & coatings technology, 2005-11, Vol.200 (5), p.1755-1760

2005

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Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

Semiconductor science and technology, 2005-03, Vol.20 (3), p.271-278

2005

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Strained Si/SiGe MOS technology: Improving gate dielectric integrity

Microelectronic engineering, 2009-03, Vol.86 (3), p.218-223

2009

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Patient-reported perspectives of therapeutic radiographers when undergoing radiotherapy: A European multi-centre study

Radiography (London, England. 1995), 2023-05, Vol.29, p.S32-S39

2023

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Device processing and characterisation of high temperature silicon carbide Schottky diodes

Microelectronic engineering, 2006, Vol.83 (1), p.150-154

2006

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Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors

Journal of applied physics, 2005-06, Vol.97 (11), p.114504-114504-9

2005

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A NEMS-based sensor to monitor stress in deep sub-micron Cu/Low-k interconnects

Semiconductor science and technology, 2009-11, Vol.24 (11), p.115018-115018 (8)

2009

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Structural pattern formation in titanium–nickel contacts on silicon carbide following high-temperature annealing

Semiconductor science and technology, 2006-07, Vol.21 (7), p.898-905

2006

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Improving metal/semiconductor conductivity using AlOx interlayers on n-type and p-type Si

Applied physics letters, 2014-08, Vol.105 (5)

2014

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The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs

Solid-state electronics, 2010-03, Vol.54 (3), p.327-335

2010

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Determination of the adhesion energy of graphene on SiC(0001) via measurement of pleat defects

Applied physics letters, 2014-11, Vol.105 (19)

2014

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Extraction of strained-Si metal-oxide-semiconductor field-effect transistor parameters using small signal channel conductance method

Journal of applied physics, 2006-02, Vol.99 (3), p.034501-034501-8

2006

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C–V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design

Semiconductor science and technology, 2003-08, Vol.18 (8), p.738-744

2003

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Strained Si/SiGe n-channel MOSFETs: impact of cross-hatching on device performance

Semiconductor science and technology, 2002-07, Vol.17 (7), p.655-661

2002

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Prediction of barrier inhomogeneities and carrier transport in Ni-silicided Schottky diode

Applied surface science, 2006-03, Vol.252 (11), p.3933-3937

2006

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Quantum modelling of I–V characteristics for 4H–SiC Schottky barrier diodes

Semiconductor science and technology, 2005-01, Vol.20 (1), p.10-15

2005

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Quantitative analysis of gate–oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures

Thin solid films, 2005-03, Vol.474 (1-2), p.154-158

2005

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Evaluation of strained Si/SiGe material for high performance CMOS

Semiconductor science and technology, 2004-06, Vol.19 (6), p.707-714

2004

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