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Atomic-scale study of GaMnAs/GaAs layers

Applied physics letters, 2000-12, Vol.77 (24), p.4001-4003

2000

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Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Physical review letters, 2000-07, Vol.85 (5), p.1068-1071

2000

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Molecular interactions of PTCDA on Si(1 0 0)

Surface science, 2005-05, Vol.581 (2), p.178-188

2005

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Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Journal of applied physics, 2002-01, Vol.91 (1), p.106-111

2002

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Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Applied physics letters, 2000-05, Vol.76 (22), p.3271-3273

2000

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Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

Applied physics letters, 1998-07, Vol.73 (1), p.96-98

1998

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Compensation mechanisms in low-temperature-grown Ga1−xMnxAs investigated by scanning tunneling spectroscopy

Applied physics letters, 2003-02, Vol.82 (5), p.712-714

2003

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Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy

Applied physics letters, 1999-05, Vol.74 (18), p.2608-2610

1999

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Microscopic behavior of silicon in silicon delta-doped layer in GaAs

Applied physics letters, 1998-05, Vol.72 (19), p.2454-2456

1998

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Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers

Journal of applied physics, 1998-03, Vol.83 (5), p.2842-2846

1998

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H–Si doping profile in GaAs by scanning tunneling microscopy

Applied physics letters, 2001-11, Vol.79 (20), p.3278-3280

2001

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Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(1 0 0) surface

Surface science, 2001-02, Vol.473 (1), p.1-7

2001

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As antisite incorporation in epitaxial growth of GaAs

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.725-728

1999

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Influence of barrier height on scanning tunneling spectroscopy experimental and theoretical aspects

Applied physics letters, 1998-02, Vol.72 (5), p.569-571

1998

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Electron spectroscopy study of the Fe/Si(111) interface formation and reactivity upon annealing

Applied surface science, 1992, Vol.56-58, p.427-433

1992

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Study of the epitaxy of β-FeSi2 by codeposition of Fe and Si on Si(111)

Applied surface science, 1993-06, Vol.70-71 (1-4), p.598-602

1993

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Iron silicide growth on Si(111) substrate using the metalorganic vapour phase epitaxy process

Journal of crystal growth, 1994, Vol.144 (1), p.29-40

1994

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Germanium behaviour during the low-temperature plasma-assisted oxidation of SiGe alloys

Surface and interface analysis, 1995-06, Vol.23 (6), p.363-366

1995

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Early stages characterisation of the formation of TiSi2 on Si(100) or Si(111)

Applied surface science, 1989-09, Vol.38 (1-4), p.49-56

1989

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An Auger and electron energy-loss study of reactions at the Ti-SiO2 interface

Journal of applied physics, 1991-06, Vol.69 (12), p.8168-8176

1991

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Electron spectroscopy study of the FeSi(111) and FeSi2Si(111) interface formation

Materials science & engineering. B, Solid-state materials for advanced technology, 1991-07, Vol.9 (1-3), p.253-257

1991

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Combined Experimental and Theoretical Study of the Si L23VV Auger Line Shape during the Ti-Si Interface Formation

Europhysics letters, 1989-11, Vol.10 (6), p.587-592

1989

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Correlation between electrical and microscopic properties of TiSi interfaces

Vacuum, 1990, Vol.41 (4), p.1043-1045

1990

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Probing the local atomic environment at the interfaces in the Fe-Si system by the surface-extended energy-loss fine-structure technique

Physical review. B, Condensed matter, 1991-12, Vol.44 (24), p.13811-13814

1991

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Growth of ultrathin iron silicide films: Observation of the gamma -FeSi2 phase by electron spectroscopies

Physical review. B, Condensed matter, 1994-02, Vol.49 (8), p.5714-5717

1994

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Atomic-scale study of GaMnAs/GaAs layers

Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Molecular interactions of PTCDA on Si(1 0 0)

Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

Compensation mechanisms in low-temperature-grown Ga1−xMnxAs investigated by scanning tunneling spectroscopy

Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy

Microscopic behavior of silicon in silicon delta-doped layer in GaAs

Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers

H–Si doping profile in GaAs by scanning tunneling microscopy

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(1 0 0) surface

As antisite incorporation in epitaxial growth of GaAs

Influence of barrier height on scanning tunneling spectroscopy experimental and theoretical aspects

Electron spectroscopy study of the Fe/Si(111) interface formation and reactivity upon annealing

Study of the epitaxy of β-FeSi2 by codeposition of Fe and Si on Si(111)

Iron silicide growth on Si(111) substrate using the metalorganic vapour phase epitaxy process

Germanium behaviour during the low-temperature plasma-assisted oxidation of SiGe alloys

Early stages characterisation of the formation of TiSi2 on Si(100) or Si(111)

An Auger and electron energy-loss study of reactions at the Ti-SiO2 interface

Electron spectroscopy study of the FeSi(111) and FeSi2Si(111) interface formation

Combined Experimental and Theoretical Study of the Si L23VV Auger Line Shape during the Ti-Si Interface Formation

Correlation between electrical and microscopic properties of TiSi interfaces

Probing the local atomic environment at the interfaces in the Fe-Si system by the surface-extended energy-loss fine-structure technique

Growth of ultrathin iron silicide films: Observation of the gamma -FeSi2 phase by electron spectroscopies

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