UB Paderborn / Katalog / Suche / in CDI

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Physical review. B, Condensed matter and materials physics, 2009-05, Vol.79 (20), p.205316-1-7, Article 205316

2009

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Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

Nanotechnology, 2012-03, Vol.23 (9), p.095702-1-9

2012

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Narrowing the length distribution of Ge nanowires

Physical review letters, 2012-03, Vol.108 (10), p.105501-105501, Article 105501

2012

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Scanning tunnelling spectroscopy and Raman spectroscopy of monolayer silicene on Ag(111)

Surface science, 2016-11, Vol.653, p.92-96

2016

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Boron distribution in the core of Si nanowire grown by chemical vapor deposition

Journal of applied physics, 2012-05, Vol.111 (9), p.094909-094909-6

2012

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Kelvin force microscopy at the second cantilever resonance: An out-of-vacuum crosstalk compensation setup

Ultramicroscopy, 2008-07, Vol.108 (8), p.773-781

2008

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Charge carrier identification in tunneling spectroscopy of core-shell nanocrystals

Physical review. B, Condensed matter and materials physics, 2011-11, Vol.84 (19), p.195133-1 - 195133-8, Article 195133

2011

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Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

Nanoscale research letters, 2011-02, Vol.6 (1), p.113-113, Article 113

2011

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Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

Microelectronic engineering, 2016-01, Vol.149, p.125-128

2016

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Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum

Ultramicroscopy, 2010, Vol.110 (2), p.162-169

2010

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Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage

Journal of applied physics, 2010-04, Vol.107 (8), p.084902-084902-7

2010

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Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Nanotechnology, 2011-08, Vol.22 (31), p.315710-1-6

2011

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Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Physical review. B, Condensed matter and materials physics, 2007-06, Vol.75 (23), p.235435-1-6, Article 235435

2007

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Evidence of electron-phonon interaction on transport in n - and p -type silicon nanowires

Applied physics letters, 2008-06, Vol.92 (24), p.242109-242109-3

2008

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Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Physical review letters, 2000-07, Vol.85 (5), p.1068-1071

2000

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Molecular interactions of PTCDA on Si(1 0 0)

Surface science, 2005-05, Vol.581 (2), p.178-188

2005

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Covalent functionalization of silicon nitride surfaces by semicarbazide group

Surface science, 2007-12, Vol.601 (23), p.5492-5498

2007

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Electron spectroscopy study of the Fe/Si(111) interface formation and reactivity upon annealing

Applied surface science, 1992, Vol.56-58, p.427-433

1992

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Growth rate model and doping metrology by atom probe tomography in silicon nanowire

Physica status solidi. C, 2011-03, Vol.8 (3), p.771-774

2011

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Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (11), p.115403-1-10, Article 115403

2010

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Electron spectroscopy study of the FeSi(111) and FeSi2Si(111) interface formation

Materials science & engineering. B, Solid-state materials for advanced technology, 1991-07, Vol.9 (1-3), p.253-257

1991

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Scanning tunneling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures

Physical review. B, Condensed matter and materials physics, 2008-04, Vol.77 (15), p.155313-1-6, Article 155313

2008

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Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface

Surface science, 2001, Vol.473, p.1-7

2001

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H–Si doping profile in GaAs by scanning tunneling microscopy

Applied physics letters, 2001-11, Vol.79 (20), p.3278-3280

2001

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Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

Narrowing the length distribution of Ge nanowires

Scanning tunnelling spectroscopy and Raman spectroscopy of monolayer silicene on Ag(111)

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

Kelvin force microscopy at the second cantilever resonance: An out-of-vacuum crosstalk compensation setup

Charge carrier identification in tunneling spectroscopy of core-shell nanocrystals

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum

Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Evidence of electron-phonon interaction on transport in n - and p -type silicon nanowires

Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Molecular interactions of PTCDA on Si(1 0 0)

Covalent functionalization of silicon nitride surfaces by semicarbazide group

Electron spectroscopy study of the Fe/Si(111) interface formation and reactivity upon annealing

Growth rate model and doping metrology by atom probe tomography in silicon nanowire

Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties

Electron spectroscopy study of the FeSi(111) and FeSi2Si(111) interface formation

Scanning tunneling spectroscopy of cleaved InAs/GaAs quantum dots at low temperatures

Effect of alkyl substituents on the adsorption of thienylenevinylene oligomers on the Si(100) surface

H–Si doping profile in GaAs by scanning tunneling microscopy

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