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NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles

Scientific reports, 2016-06, Vol.6 (1), p.27261-27261, Article 27261

2016

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Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Applied physics letters, 2013-10, Vol.103 (15)

2013

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Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Physical review. B, Condensed matter and materials physics, 2009-05, Vol.79 (20), p.205316-1-7, Article 205316

2009

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Estimation of π–π Electronic Couplings from Current Measurements

Nano letters, 2017-05, Vol.17 (5), p.3215-3224

2017

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Narrowing the length distribution of Ge nanowires

Physical review letters, 2012-03, Vol.108 (10), p.105501-105501, Article 105501

2012

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Lazarevicite-type short-range ordering in ternary III-V nanowires

Physical review. B, 2016-11, Vol.94 (19), Article 195306

2016

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Probing the electronic properties of graphene on C-face SiC down to single domains by nanoresolved photoelectron spectroscopies

Physical review. B, Condensed matter and materials physics, 2015-07, Vol.92 (3), Article 035105

2015

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Kelvin force microscopy at the second cantilever resonance: An out-of-vacuum crosstalk compensation setup

Ultramicroscopy, 2008-07, Vol.108 (8), p.773-781

2008

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Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum

Ultramicroscopy, 2010, Vol.110 (2), p.162-169

2010

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Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs

Physical review letters, 2005-01, Vol.94 (2), p.026407-026407, Article 026407

2005

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Composition modulation by twinning in InAsSb nanowires

Nanotechnology, 2019-08, Vol.30 (32), p.324005-324005

2019

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Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

Nano letters, 2019-12, Vol.19 (12), p.8801-8805

2019

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On the mechanical and electronic properties of thiolated gold nanocrystals

Nanoscale, 2015-02, Vol.7 (5), p.1809-1819

2015

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Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

Applied physics letters, 2015-09, Vol.107 (11)

2015

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Atomic-scale study of GaMnAs/GaAs layers

Applied physics letters, 2000-12, Vol.77 (24), p.4001-4003

2000

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Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Physical review letters, 2000-07, Vol.85 (5), p.1068-1071

2000

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Molecular interactions of PTCDA on Si(1 0 0)

Surface science, 2005-05, Vol.581 (2), p.178-188

2005

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Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

Applied physics letters, 1998-07, Vol.73 (1), p.96-98

1998

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Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Journal of applied physics, 2002-01, Vol.91 (1), p.106-111

2002

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Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Applied physics letters, 2000-05, Vol.76 (22), p.3271-3273

2000

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Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Nanotechnology, 2011-08, Vol.22 (31), p.315710-1-6

2011

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Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Physical review. B, Condensed matter and materials physics, 2007-06, Vol.75 (23), p.235435-1-6, Article 235435

2007

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Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers

Journal of applied physics, 1998-03, Vol.83 (5), p.2842-2846

1998

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Growth rate model and doping metrology by atom probe tomography in silicon nanowire

Physica status solidi. C, 2011-03, Vol.8 (3), p.771-774

2011

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Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

Nanotechnology, 2012-03, Vol.23 (9), p.095702-1-9

2012

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NanoARPES of twisted bilayer graphene on SiC: absence of velocity renormalization for small angles

Hidden surface states at non-polar GaN (101¯) facets: Intrinsic pinning of nanowires

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

Estimation of π–π Electronic Couplings from Current Measurements

Narrowing the length distribution of Ge nanowires

Lazarevicite-type short-range ordering in ternary III-V nanowires

Probing the electronic properties of graphene on C-face SiC down to single domains by nanoresolved photoelectron spectroscopies

Kelvin force microscopy at the second cantilever resonance: An out-of-vacuum crosstalk compensation setup

Dynamic behavior of amplitude detection Kelvin force microscopy in ultrahigh vacuum

Direct evidence for shallow acceptor states with nonspherical symmetry in GaAs

Composition modulation by twinning in InAsSb nanowires

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

On the mechanical and electronic properties of thiolated gold nanocrystals

Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

Atomic-scale study of GaMnAs/GaAs layers

Imaging the wave-function amplitudes in cleaved semiconductor quantum boxes

Molecular interactions of PTCDA on Si(1 0 0)

Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots

Thermally assisted formation of silicon islands on a silicon-on-insulator substrate

Formation of silicon islands on a silicon on insulator substrate upon thermal annealing

Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

Growth mechanism of organic nanocrystals on passivated semiconductor surfaces

Kinetics and mechanism of low temperature atomic oxygen-assisted oxidation of SiGe layers

Growth rate model and doping metrology by atom probe tomography in silicon nanowire

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques

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