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Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

Journal of applied physics, 2020-10, Vol.128 (16)

2020

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A Kinetic Monte Carlo Algorithm to Model the Annealing Process and Compute the Dark Current Nonuniformity

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1701-1711

2021

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Impact of the Border Crossing Effects on the DCNU for Pixel Arrays Irradiated With High Energy Protons

IEEE transactions on nuclear science, 2016-08, Vol.63 (4), p.2159-2167

2016

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Displacement Damage Effects in InGaAs Photodiodes due to Electron, Proton, and Neutron Irradiations

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1263-1272

2020

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Comparison of Methods to Calculate the Dark Current Nonuniformity

IEEE transactions on nuclear science, 2018-07, Vol.65 (7), p.1345-1354

2018

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Radiation Tolerance of Low-Noise Photoreceivers for the LISA Space Mission

IEEE transactions on nuclear science, 2024-08, Vol.71 (8), p.1914-1923

2024

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Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

IEEE transactions on nuclear science, 2021-08, Vol.68 (8), p.1694-1700

2021

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"Effective NIEL" in Silicon: Calculation Using Molecular Dynamics Simulation Results

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1915-1923

2010

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Gamma and Electron NIEL Dependence of Irradiated GaAs

IEEE transactions on nuclear science, 2017-03, Vol.64 (3), p.991-998

2017

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Atmospheric Radiation Environment Analyses Based-on CCD Camera, Neutron Spectrometer and Multi-Physics Modeling

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4660-4667

2013

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Modeling the Dark Current Non-Uniformity of Image Sensors With GEANT4

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3323-3330

2014

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Low Temperature Total Dose Irradiation of Transistors for Infrared Applications

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3341-3347

2014

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Annealing of Proton-Induced Random Telegraph Signal in CCDs

IEEE transactions on nuclear science, 2007-08, Vol.54 (4), p.1120-1128

2007

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Experimental Methods for Defect Introduction Rates Determination in Multijunction Solar Cells

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.2237-2241

2009

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Using Subthreshold Heavy Ion Upset Cross Section to Calculate Proton Sensitivity

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2394-2399

2007

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In-flight observations of the radiation environment and its effects on devices in the SAC-C polar orbit

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2782-2787

2002

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Evaluation of Recent Technologies of Nonvolatile RAM

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.1982-1991

2008

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Probing With Heavy Ions the SET Sensitivity of Linear Devices

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3321-3327

2008

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Measurements of Random Telegraph Signal in CCDs Irradiated With Protons and Neutrons

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1764-1771

2006

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Memories Response to MBU and Semi-Empirical Approach for SEE Rate Calculation

IEEE transactions on nuclear science, 2006-08, Vol.53 (4), p.1787-1793

2006

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Light Particle-Induced Single Event Degradation in SDRAMs

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3544-3549

2006

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Influence of LDD spacers on total ionizing dose response of the transconductance for bulk MOSFETs working at cryogenic temperatures

Microelectronics and reliability, 2022-08, Vol.135, p.114603, Article 114603

2022

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Total Ionizing Dose Effects ofn-FinFET Transistor in iN14 Technology

2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC), 2021, p.1-7

2021

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About the scatter of displacement damage and its consequence on the NIEL scaling approach

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2018, p.1-9

2018

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Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS), 2020, p.1-8

2020

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Influence of a 3D electric field enhancement model on the Monte Carlo calculation of the dark current in pixel arrays

A Kinetic Monte Carlo Algorithm to Model the Annealing Process and Compute the Dark Current Nonuniformity

Impact of the Border Crossing Effects on the DCNU for Pixel Arrays Irradiated With High Energy Protons

Displacement Damage Effects in InGaAs Photodiodes due to Electron, Proton, and Neutron Irradiations

Comparison of Methods to Calculate the Dark Current Nonuniformity

Radiation Tolerance of Low-Noise Photoreceivers for the LISA Space Mission

Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

"Effective NIEL" in Silicon: Calculation Using Molecular Dynamics Simulation Results

Gamma and Electron NIEL Dependence of Irradiated GaAs

Atmospheric Radiation Environment Analyses Based-on CCD Camera, Neutron Spectrometer and Multi-Physics Modeling

Modeling the Dark Current Non-Uniformity of Image Sensors With GEANT4

Low Temperature Total Dose Irradiation of Transistors for Infrared Applications

Annealing of Proton-Induced Random Telegraph Signal in CCDs

Experimental Methods for Defect Introduction Rates Determination in Multijunction Solar Cells

Using Subthreshold Heavy Ion Upset Cross Section to Calculate Proton Sensitivity

In-flight observations of the radiation environment and its effects on devices in the SAC-C polar orbit

Evaluation of Recent Technologies of Nonvolatile RAM

Probing With Heavy Ions the SET Sensitivity of Linear Devices

Measurements of Random Telegraph Signal in CCDs Irradiated With Protons and Neutrons

Memories Response to MBU and Semi-Empirical Approach for SEE Rate Calculation

Light Particle-Induced Single Event Degradation in SDRAMs

Influence of LDD spacers on total ionizing dose response of the transconductance for bulk MOSFETs working at cryogenic temperatures

Total Ionizing Dose Effects ofn-FinFET Transistor in iN14 Technology

About the scatter of displacement damage and its consequence on the NIEL scaling approach

Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology

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