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Up to 80 Gbaud DP-16QAM operation using InP-based high-bandwidth coherent driver modulator

Electronics letters, 2019-08, Vol.55 (17), p.951-953

2019

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Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1361-1366

2003

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Wideband tuning of tunable distributed amplification distributed feedback laser array

Electronics letters, 2008, Vol.44 (3), p.205-207

2008

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High-performance 1.55-μm wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions

IEEE journal of selected topics in quantum electronics, 2001-03, Vol.7 (2), p.249-258

2001

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Stable single-mode operation of distributed feedback lasers with wirelike active regions

IEEE journal of selected topics in quantum electronics, 2003-09, Vol.9 (5), p.1166-1171

2003

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1.3- \mu m 4 \,\times\, 25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethernet

IEEE photonics technology letters, 2011-03, Vol.23 (6), p.356-358

2011

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Dynamic Characterization of Distortion in Hybrid Silicon Evanescent Phase Modulators

IEEE photonics technology letters, 2009-07, Vol.21 (13), p.833-835

2009

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Ultra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission

Journal of lightwave technology, 2013-02, Vol.31 (4), p.602-608

2013

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Continuous wave operation of optically pumped membrane DFB laser

Electronics letters, 2001-11, Vol.37 (24), p.1455-1457

2001

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Low-threshold singlemode operation of membrane BH-DFB lasers

Electronics letters, 2002, Vol.38 (23), p.1444

2002

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Sub-milliampere operation of 1.55 mu m wavelength high index-coupled buried heterostructure distributed feedback lasers

Electronics letters, 2000-07, Vol.36 (14), p.1213-1214

2000

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High Power Silicon-Germanium Photodiodes for Microwave Photonic Applications

IEEE transactions on microwave theory and techniques, 2010-11, Vol.58 (11), p.3336-3343

2010

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Tunable Distributed Amplification (TDA-) DFB Laser with Asymmetric Structure

IEEE journal of selected topics in quantum electronics, 2011-11, Vol.17 (6), p.1505-1512

2011

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A Compact EADFB Laser Array Module for a Future 100-Gb/s Ethernet Transceiver

IEEE journal of selected topics in quantum electronics, 2011-09, Vol.17 (5), p.1191-1197

2011

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Low-voltage operation of 100-Gbit/s EADFB laser array module

22nd IEEE International Semiconductor Laser Conference, 2010, p.57-58

2010

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Wideband tuning of tunable distributed amplification distributed feedback laser array

Electronics letters, 2008-01, Vol.44 (3), p.1-1

2008

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Sub-milliampere operation of 1.55 [micro sign]m wavelength high index-coupled buried heterostructure distributed feedback lasers

Electronics letters, 2000, Vol.36 (14), p.1213, Article 1213

2000

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Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.723-726

2002

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Stable wavelength switching within 50 ns using tunable distributed amplification (TDA-) DFB lasers

2014 12th International Conference on Optical Internet 2014 (COIN), 2014, p.1-2

2014

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2.33-[Formula Omitted]m-Wavelength Distributed Feedback Lasers With InAs-In[Formula Omitted]Ga[Formula Omitted]As Multiple-Quantum Wells on InP Substrates

IEEE photonics technology letters, 2008-06, Vol.20 (12), p.1045

2008

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2.33- \mu m-Wavelength Distributed Feedback Lasers With InAs-In Ga As Multiple-Quantum Wells on InP Substrates

IEEE photonics technology letters, 2008-06, Vol.20 (12), p.1045-1047

2008

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Low-damage etched/regrown interfaces of GaInAsP/InP wirelike laser with strain-compensated MQW structure

Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198), 2001, p.67-70

2001

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2.33- m-Wavelength Distributed Feedback Lasers With InAsaIn Ga As Multiple-Quantum Wells on InP Substrates

IEEE photonics technology letters, 2008-01, Vol.20 (12)

2008

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GaInAsP/InP MULTIPLE-LAYERED QUANTUM-WIRE LASERS FABRICATED BY CH4/H2 REACTIVE-ION ETCHING

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 6A, pp. 3410-3415. 2000, 2000, Vol.39 (6A), p.3410-3415

2000

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Low-threshold singlemode operation of membrane BH-DFB lasers

Electronics letters, 2002-11, Vol.38 (23), p.1-1

2002

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Up to 80 Gbaud DP-16QAM operation using InP-based high-bandwidth coherent driver modulator

Optically pumped membrane BH-DFB lasers for low-threshold and single-mode operation

Wideband tuning of tunable distributed amplification distributed feedback laser array

High-performance 1.55-μm wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions

Stable single-mode operation of distributed feedback lasers with wirelike active regions

1.3- \mu m 4 \,\times\, 25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethernet

Dynamic Characterization of Distortion in Hybrid Silicon Evanescent Phase Modulators

Ultra-Compact 100 GbE Transmitter Optical Sub-Assembly for 40-km SMF Transmission

Continuous wave operation of optically pumped membrane DFB laser

Low-threshold singlemode operation of membrane BH-DFB lasers

Sub-milliampere operation of 1.55 mu m wavelength high index-coupled buried heterostructure distributed feedback lasers

High Power Silicon-Germanium Photodiodes for Microwave Photonic Applications

Tunable Distributed Amplification (TDA-) DFB Laser with Asymmetric Structure

A Compact EADFB Laser Array Module for a Future 100-Gb/s Ethernet Transceiver

Low-voltage operation of 100-Gbit/s EADFB laser array module

Wideband tuning of tunable distributed amplification distributed feedback laser array

Sub-milliampere operation of 1.55 [micro sign]m wavelength high index-coupled buried heterostructure distributed feedback lasers

Large blue shift in GaInAsP/InP vertically-stacked multiple-quantum-wire lasers by dry etching and regrowth processes

Stable wavelength switching within 50 ns using tunable distributed amplification (TDA-) DFB lasers

2.33-[Formula Omitted]m-Wavelength Distributed Feedback Lasers With InAs-In[Formula Omitted]Ga[Formula Omitted]As Multiple-Quantum Wells on InP Substrates

2.33- \mu m-Wavelength Distributed Feedback Lasers With InAs-In Ga As Multiple-Quantum Wells on InP Substrates

Low-damage etched/regrown interfaces of GaInAsP/InP wirelike laser with strain-compensated MQW structure

2.33- m-Wavelength Distributed Feedback Lasers With InAsaIn Ga As Multiple-Quantum Wells on InP Substrates

GaInAsP/InP MULTIPLE-LAYERED QUANTUM-WIRE LASERS FABRICATED BY CH4/H2 REACTIVE-ION ETCHING

Low-threshold singlemode operation of membrane BH-DFB lasers

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