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Current-voltage characteristics of a-Si:H film photodiodes prepared by mercury-sensitized photochemical vapor deposition

JPN J APPL PHYS PART 1 REGUL PAP SHORT NOTE, 1992, Vol.31 (9A), p.2673-2677

1992

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Improvement of hydrogenated amorphous silicon n-i-p diode performance by H2 plasma treatment for i/p interface

Japanese journal of applied physics, 1990, Vol.29 (12), p.L2159-L2162

1990

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Characteristics for a-Si:H films prepared by mercury-sensitized photochemical vapor deposition

Japanese Journal of Applied Physics, 1987-10, Vol.26 (10), p.L1573-L1575

1987

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Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon

Japanese Journal of Applied Physics, 1989-10, Vol.28 (10A), p.L1708

1989

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Intrinsic type a-SiC:H hole-blocking layer effects on image lag in an amorphous silicon image sensor

Journal of non-crystalline solids, 1991, Vol.137, p.1313-1316

1991

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Hg-sensitized photochemical vapor deposition application to hydrogenated amorphous silicon photoconversion layer overlaid on charge coupled device

Japanese Journal of Applied Physics, 1995, Vol.34 (5A), p.2223-2228

1995

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Correlation between Si-H2 bond density and electron drift mobility in a-Si:H films prepared by photochemical vapor deposition

Japanese journal of applied physics, 1988, Vol.27 (10), p.L1803-L1805

1988

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Light-soaking effects on a-Si:H photodiodes deposited by the laminar-flow photo-CVD method

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2249-2254

2001

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Hydrogenated Amorphous Silicon Films Prepared by Mercury Sensitized Photochemical Vapor Deposition

MRS proceedings, 1989, Vol.149, Article 51

1989

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Image Sensing Technology. A CMOS Image Sensor with High Sensitivity and Low Dark Current

Eizō Jōhō Media Gakkaishi, 2001, Vol.55 (2), p.257-263

2001

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3.7x3.7 mu m super(2) square pixel CMOS image sensor for digital still camera application

Digest of technical papers - IEEE International Solid-State Circuits Conference, 1998-01

1998

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Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H 2 Plasma Treatment for i/p Interface

Japanese Journal of Applied Physics, 1990-12, Vol.29 (12A), p.L2159

1990

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Improvement of surface morphology and bulk structure of a-SiC:H films

Journal of non-crystalline solids, 1996-05, Vol.198, p.1021-1025

1996

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Electric field concentration at electrode edge with decreasing amorphous silicon defect density

Journal of non-crystalline solids, 1996, Vol.198, p.326-329

1996

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Radio Frequency Power Dependence of Defect Density at Hydrogenated Amorphous Silicon Interface

MRS proceedings, 1991, Vol.237, Article 637

1991

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Characteristics of a-Si:H films prepared by a novel laminar flow photo-chemical vapor deposition method

Journal of non-crystalline solids, 1996-05, Vol.198, p.1017-1020

1996

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Chemical Studies on the Hot Springs of Beppu. XII. On the Specific Properties of the Natural Hot Spring. 3. Potere Suppressive Specific, Benzidine Reaction and Aging Phenomenon

Nihon kagaku zasshi, 1958, Vol.79 (11), p.1285-1287

1958

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A 2/3-in 2 million pixel STACK-CCD HDTV imager

IEEE journal of solid-state circuits, 1995-08, Vol.30 (8), p.881-889

1995

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Predominant influences on the bulk properties and surface morphology in hydrogenated amorphous silicon carbide films

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1996-08, Vol.74 (2), p.199-209

1996

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Correlation between Si-H 2 Bond Density and Electron Drift Mobility in a-Si:H Films Prepared by Photochemical Vapor Deposition

Japanese Journal of Applied Physics, 1988-10, Vol.27 (10A), p.L1803

1988

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A new, laminar flow photo-CVD method for preparing hydrogenated amorphous silicon films

Journal of non-crystalline solids, 1991, Vol.137, p.665-668

1991

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Chemical Studies on the Hot Springs of Beppu. XI. On the Specific Properties of the Natural Hot Spring. 2. The Coefficient of Hydrogen Peroxide Decomposition Rate, Redox Potential, Absorption Spectrum and Aging Phenomenon

Nihon kagaku zasshi, 1958, Vol.79 (11), p.1280-1284

1958

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Rubicon inhibits autophagy and accelerates hepatocyte apoptosis and lipid accumulation in nonalcoholic fatty liver disease in mice

Hepatology (Baltimore, Md.), 2016-12, Vol.64 (6), p.1994-2014

2016

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Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯) substrates

Applied physics letters, 2022-08, Vol.121 (6)

2022

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Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

Applied physics letters, 2022-02, Vol.120 (8)

2022

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Current-voltage characteristics of a-Si:H film photodiodes prepared by mercury-sensitized photochemical vapor deposition

Improvement of hydrogenated amorphous silicon n-i-p diode performance by H2 plasma treatment for i/p interface

Characteristics for a-Si:H films prepared by mercury-sensitized photochemical vapor deposition

Mercury-Sensitized Hydrogen Radical Photoetching of Undoped Hydrogenated Amorphous Silicon and Crystalline Silicon

Intrinsic type a-SiC:H hole-blocking layer effects on image lag in an amorphous silicon image sensor

Hg-sensitized photochemical vapor deposition application to hydrogenated amorphous silicon photoconversion layer overlaid on charge coupled device

Correlation between Si-H2 bond density and electron drift mobility in a-Si:H films prepared by photochemical vapor deposition

Light-soaking effects on a-Si:H photodiodes deposited by the laminar-flow photo-CVD method

Hydrogenated Amorphous Silicon Films Prepared by Mercury Sensitized Photochemical Vapor Deposition

Image Sensing Technology. A CMOS Image Sensor with High Sensitivity and Low Dark Current

3.7x3.7 mu m super(2) square pixel CMOS image sensor for digital still camera application

Improvement of Hydrogenated Amorphous Silicon n-i-p Diode Performance by H 2 Plasma Treatment for i/p Interface

Improvement of surface morphology and bulk structure of a-SiC:H films

Electric field concentration at electrode edge with decreasing amorphous silicon defect density

Radio Frequency Power Dependence of Defect Density at Hydrogenated Amorphous Silicon Interface

Characteristics of a-Si:H films prepared by a novel laminar flow photo-chemical vapor deposition method

Chemical Studies on the Hot Springs of Beppu. XII. On the Specific Properties of the Natural Hot Spring. 3. Potere Suppressive Specific, Benzidine Reaction and Aging Phenomenon

A 2/3-in 2 million pixel STACK-CCD HDTV imager

Predominant influences on the bulk properties and surface morphology in hydrogenated amorphous silicon carbide films

Correlation between Si-H 2 Bond Density and Electron Drift Mobility in a-Si:H Films Prepared by Photochemical Vapor Deposition

A new, laminar flow photo-CVD method for preparing hydrogenated amorphous silicon films

Chemical Studies on the Hot Springs of Beppu. XI. On the Specific Properties of the Natural Hot Spring. 2. The Coefficient of Hydrogen Peroxide Decomposition Rate, Redox Potential, Absorption Spectrum and Aging Phenomenon

Rubicon inhibits autophagy and accelerates hepatocyte apoptosis and lipid accumulation in nonalcoholic fatty liver disease in mice

Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 000 1 ¯) substrates

Insight into interface electrical properties of metal–oxide–semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing

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