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Direct band-gap crossover in epitaxial monolayer boron nitride

Nature communications, 2019-06, Vol.10 (1), p.2639-7, Article 2639

2019

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Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride

Physical review. X, 2022-03, Vol.12 (1), p.011057, Article 011057

2022

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Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

2d materials, 2017-03, Vol.4 (2), p.21023

2017

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Simultaneous Enhancement of Thermopower and Electrical Conductivity through Isovalent Substitution of Cerium in Bismuth Selenide Thermoelectric Materials

ACS applied materials & interfaces, 2019-11, Vol.11 (47), p.44026-44035

2019

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Density of states in locally ordered amorphous organic semiconductors: Emergence of the exponential tails

The Journal of chemical physics, 2021-03, Vol.154 (12), p.124711-124711

Novikov, S. V.

2021

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Electronic Structure and Thermoelectric Properties of Transition Metal Monosilicides

Journal of electronic materials, 2018-06, Vol.47 (6), p.3277-3281

2018

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Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

Applied physics letters, 2015-10, Vol.107 (14)

2015

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An atomic carbon source for high temperature molecular beam epitaxy of graphene

Scientific reports, 2017-07, Vol.7 (1), p.6598-8, Article 6598

2017

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Enhanced Bimolecular Recombination of Charge Carriers in Amorphous Organic Semiconductors: Overcoming the Langevin Limit

Journal of physical chemistry. C, 2019-08, Vol.123 (31), p.18854-18860

Novikov, S. V

2019

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Grain boundary scattering contribution to the thermopower in Cr-Si nanocrystalline films

Journal of physics. Conference series, 2016-11, Vol.769 (1), p.12069

2016

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Bimolecular Recombination of Charge Carriers in Polar Amorphous Organic Semiconductors: Effect of Spatial Correlation of the Random Energy Landscape

Journal of physical chemistry. C, 2018-10, Vol.122 (40), p.22856-22863

Novikov, S. V

2018

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Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers

Applied surface science, 2014-10, Vol.317, p.1010-1014

2014

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Growth and characterization of highly mismatched GaN1−xSbx alloys

Journal of applied physics, 2014-09, Vol.116 (12)

2014

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Management of Labor Costs: Production and Engineering Staff

Russian engineering research, 2023-11, Vol.43 (11), p.1472-1474

Novikov, S. V.

2023

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Diffusion of a particle in the spatially correlated exponential random energy landscape: Transition from normal to anomalous diffusion

The Journal of chemical physics, 2018-01, Vol.148 (2), p.024505-024505

Novikov, S. V.

2018

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Hopping charge transport in amorphous semiconductors with the spatially correlated exponential density of states

The Journal of chemical physics, 2017-01, Vol.146 (2), p.024504-024504

Novikov, S. V.

2017

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Alexander Dmitrievich Kolesnikov (1919–2012): Patriarch of historical science in Siberia

Omsk Scientific Bulletin. Series Society. History. Modernity, 2023-12, Vol.8 (4), p.71-79

Novikov, S. V.

2023

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A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2009-06, Vol.311 (13), p.3423-3427

2009

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Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt

Journal of crystal growth, 2012-09, Vol.354 (1), p.44-48

2012

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Organization of Management Systems for Material Resources at Knowledge-Intensive Enterprises

Russian engineering research, 2023, Vol.43 (7), p.883-886

Novikov, S. V.

2023

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On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn

Semiconductors (Woodbury, N.Y.), 2019-06, Vol.53 (6), p.761-764

2019

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Charge-carrier transport in disordered polymers

Journal of polymer science. Part B, Polymer physics, 2003-11, Vol.41 (21), p.2584-2594

Novikov, S. V.

2003

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A special division of the Police Department and its participation in political life of Russian Empire. 1900–1914

Omsk Scientific Bulletin. Series Society. History. Modernity, 2023-05, Vol.8 (2), p.21-29

Novikov, S. V.

2023

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Far tails of the density of states in amorphous organic semiconductors

The Journal of chemical physics, 2015-10, Vol.143 (16), p.164510-164510

Novikov, S V

2015

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Potential of Mn doped In1-xGaxN for implementing intermediate band solar cells

Solar energy materials and solar cells, 2009-05, Vol.93 (5), p.641-644

2009

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Direct band-gap crossover in epitaxial monolayer boron nitride

Exciton and Phonon Radiative Linewidths in Monolayer Boron Nitride

Deep ultraviolet emission in hexagonal boron nitride grown by high-temperature molecular beam epitaxy

Simultaneous Enhancement of Thermopower and Electrical Conductivity through Isovalent Substitution of Cerium in Bismuth Selenide Thermoelectric Materials

Density of states in locally ordered amorphous organic semiconductors: Emergence of the exponential tails

Electronic Structure and Thermoelectric Properties of Transition Metal Monosilicides

Electronic band structure of highly mismatched GaN1−xSbx alloys in a broad composition range

An atomic carbon source for high temperature molecular beam epitaxy of graphene

Enhanced Bimolecular Recombination of Charge Carriers in Amorphous Organic Semiconductors: Overcoming the Langevin Limit

Grain boundary scattering contribution to the thermopower in Cr-Si nanocrystalline films

Bimolecular Recombination of Charge Carriers in Polar Amorphous Organic Semiconductors: Effect of Spatial Correlation of the Random Energy Landscape

Low fraction of hexagonal inclusions in thick and bulk cubic GaN layers

Growth and characterization of highly mismatched GaN1−xSbx alloys

Management of Labor Costs: Production and Engineering Staff

Diffusion of a particle in the spatially correlated exponential random energy landscape: Transition from normal to anomalous diffusion

Hopping charge transport in amorphous semiconductors with the spatially correlated exponential density of states

Alexander Dmitrievich Kolesnikov (1919–2012): Patriarch of historical science in Siberia

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt

Organization of Management Systems for Material Resources at Knowledge-Intensive Enterprises

On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn

Charge-carrier transport in disordered polymers

A special division of the Police Department and its participation in political life of Russian Empire. 1900–1914

Far tails of the density of states in amorphous organic semiconductors

Potential of Mn doped In1-xGaxN for implementing intermediate band solar cells

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