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Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1457-1461

2018

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Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Quick search of neighbour particles in molecular dynamics simulations

Journal of physics. Conference series, 2020-12, Vol.1680 (1), p.12036

2020

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Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1866-1868

2020

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Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

Surface & coatings technology, 2005-06, Vol.196 (1), p.25-29

2005

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Specific behaviour of stress relaxation in GexSi1−x films grown on porous silicon based mesa substrates: computer calculations

Semiconductor science and technology, 2003-01, Vol.18 (1), p.39-44

2003

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Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation

Journal of crystal growth, 2011-05, Vol.323 (1), p.244-246

2011

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Morphology of porous silicon structures formed by anodization of heavily and lightly doped silicon

Thin solid films, 1998-09, Vol.330 (2), p.102-107

1998

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Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates

Journal of crystal growth, 2022-09, Vol.593, p.126763, Article 126763

2022

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Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4712-4715

2009

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Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates

AIP conference proceedings, 2011, Vol.1399 (1)

2011

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Ge/Si nanostructures with quantum dots grown by ion-beam assisted heteroepitaxy

Journal of physics. Conference series, 2010-09, Vol.245 (1), p.012071

2010

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Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

Journal of applied physics, 2022-01, Vol.131 (3)

2022

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Quantum Dot Size Tuning And Self-Organization With Pulsed Ion Beam Nucleation And Growth Of Ge/Si Nanostructures

Physics of Semiconductors; Part A, 2005, Vol.772, p.607-608

2005

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Self-Organization of Ge Substrates

Semiconductors (Woodbury, N.Y.), 2020-12, Vol.54 (14), p.1866

2020

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Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

Nanotechnologies in Russia, 2015-03, Vol.10 (3-4), p.192-204

2015

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Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

Applied physics letters, 2009-02, Vol.94 (5)

2009

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Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

Optoelectronics, instrumentation, and data processing, 2014-05, Vol.50 (3), p.247-251

2014

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Mechanisms of formation and topological analysis of porous silicon — computational modeling

Computational materials science, 1998-02, Vol.10 (1-4), p.406-410

1998

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SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS

Pribory i metody izmererij, 2015-04 (1), p.44-50

2015

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Structural features and conductivity of silicon films: Simulation and experiment

Journal of structural chemistry, 2012-07, Vol.53 (4), p.800-804

2012

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Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Applied physics letters, 2007-03, Vol.90 (13)

2007

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Simulation of the formation of porous-silicon structures

JETP letters, 1997-05, Vol.65 (9), p.714-719

1997

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Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

Thin solid films, 2008-11, Vol.517 (1), p.313-316

2008

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Nucleation of Three-Dimensional Ge Islands on a Patterned Si(100) Surface

Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

Quick search of neighbour particles in molecular dynamics simulations

Self-Organization of Ge(Si) Nanoisland Groups on Pit-Patterned Si(100) Substrates

Ge/Si quantum dot nanostructures grown with low-energy ion beam-assisted epitaxy

Specific behaviour of stress relaxation in GexSi1−x films grown on porous silicon based mesa substrates: computer calculations

Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation

Morphology of porous silicon structures formed by anodization of heavily and lightly doped silicon

Groups of Ge nanoislands grown outside pits on pit-patterned Si substrates

Stress-induced nanoislands nucleation during growth of Ge/Si heterostructures under low-energy ion irradiation

Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates

Ge/Si nanostructures with quantum dots grown by ion-beam assisted heteroepitaxy

Tuning the configuration of quantum dot molecules grown on stacked multilayers of heteroepitaxial islands

Quantum Dot Size Tuning And Self-Organization With Pulsed Ion Beam Nucleation And Growth Of Ge/Si Nanostructures

Self-Organization of Ge Substrates

Chains of quantum dot molecules grown on Si surface pre-patterned by ion-assisted nanoimprint lithography

Simulating the nucleation and growth of Ge quantum dots on Si using high-efficiency algorithms

Crystallinity and microstructure in Si films grown by plasma-enhanced chemical vapor deposition: A simple atomic-scale model validated by experiments

Formation of germanium nanoislands on pit-patterned silicon substrates by means of the molecular dynamics method

Mechanisms of formation and topological analysis of porous silicon — computational modeling

SILICON-GERMANIUM NANOSTRUCTURES WITH GERMANIUM QUANTUM DOTS FOR OPTOELECTRONIC APPLICATIONS

Structural features and conductivity of silicon films: Simulation and experiment

Pulsed ion-beam induced nucleation and growth of Ge nanocrystals on SiO2

Simulation of the formation of porous-silicon structures

Pulsed ion-beam assisted deposition of Ge nanocrystals on SiO2 for non-volatile memory device

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