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III-V Microelectronics

Nougier, J.P

2014

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Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices

Physica. B, Condensed matter, 1999-12, Vol.272 (1), p.260-262

1999

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Thermal conductivity of nonequilibrium carriers

Physica. B, Condensed matter, 1999-12, Vol.272 (1), p.247-249

1999

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E.L.E.N. European Laboratory for Electronic Noise

ESSDERC '94: 24th European Solid State Device Research Conference, 1994, p.111-114

Nougier, J.P.

1994

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A Novel Hydrodynamic Modeling of Noise Spectra under Constant Voltage Operation

Materials science forum, 1998-12, Vol.297-298, p.151-154

1998

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Hydrodynamic Modeling of Spatial Cross-Correlation of Conduction Current Fluctuations

Materials science forum, 1998-12, Vol.297-298, p.147-150

1998

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Preface

ESSDERC '88: 18th European Solid State Device Research Conference, 1988, p.iii-iii

Nougier, J.P.

1988

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Noise in devices: definition, modelling

III-V Microelectronics, 1991, p.183-238

1991

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Basic Physical mechanisms

III-V Microelectronics, 1991, p.1-56

1991

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Transport parameters of hot electrons in GaAs at 300 K

Physica B + C, 1985-01, Vol.134 (1), p.264-268

1985

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Transverse diffusion coefficient and carrier density fluctuation derived from the fluctuation of the state occupancy function in semiconductors

Solid-state electronics, 1989-12, Vol.32 (12), p.1901-1904

1989

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Effect of the degeneracy on the transport of hot holes in silicon

Solid-state electronics, 1989-12, Vol.32 (12), p.1895-1899

1989

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2-D Modeling of Electronic Noise in Semiconductor Devices

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference, 1996, p.965-968

1996

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Determination of transport coefficients by transient photoconductivity measurements

Physica B + C, 1985-01, Vol.129 (1), p.524-526

1985

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Hot phonon-hot electron coupled Boltzmann equations

Solid-state electronics, 1989-12, Vol.32 (12), p.1229-1233

1989

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Origine du bruit dans les dispositifs à semiconducteurs

Revue de physique appliquée, 1987, Vol.22 (8), p.803-819

Nougier, J.P.

1987

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Foreword

Revue de physique appliquée, 1978, Vol.13 (12), p.R3-R3

1978

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Foreword

Revue de physique appliquée, 1978, Vol.13 (12), p.3-3

1978

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Method for numerically computing the noise of devices

Physica B + C, 1985-01, Vol.134 (1), p.260-263

1985

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Space charge induced in semiconductors by hot carrier regime

Physics letters. A, 1973-01, Vol.43 (5), p.451-452

Nougier, J.P.

1973

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Intervalley transfers of hot electrons in silicon below 77 K

Physics letters. A, 1976-04, Vol.56 (4), p.314-316

1976

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Scattered packet method for the simulation of the spatio-temporal evolution of local perturbations

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2000, p.77-78

2000

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Metal semiconductor contact: Resistivity and noise

Solid-state electronics, 1973-01, Vol.16 (12), p.1399-1405

1973

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Generation-recombination noise at 77°K in silicon bars and JFETs

Solid-state electronics, 1979, Vol.22 (2), p.177-179

1979

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Noise of hot carriers in the channel of n silicon junction gate field effect transistors

Solid-state electronics, 1978, Vol.21 (1), p.133-138

1978

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III-V Microelectronics

Generalized transfer-fields and Langevin forces for hot-carrier fluctuations in semiconductor submicron devices

Thermal conductivity of nonequilibrium carriers

E.L.E.N. European Laboratory for Electronic Noise

A Novel Hydrodynamic Modeling of Noise Spectra under Constant Voltage Operation

Hydrodynamic Modeling of Spatial Cross-Correlation of Conduction Current Fluctuations

Preface

Noise in devices: definition, modelling

Basic Physical mechanisms

Transport parameters of hot electrons in GaAs at 300 K

Transverse diffusion coefficient and carrier density fluctuation derived from the fluctuation of the state occupancy function in semiconductors

Effect of the degeneracy on the transport of hot holes in silicon

2-D Modeling of Electronic Noise in Semiconductor Devices

Determination of transport coefficients by transient photoconductivity measurements

Hot phonon-hot electron coupled Boltzmann equations

Origine du bruit dans les dispositifs à semiconducteurs

Foreword

Foreword

Method for numerically computing the noise of devices

Space charge induced in semiconductors by hot carrier regime

Intervalley transfers of hot electrons in silicon below 77 K

Scattered packet method for the simulation of the spatio-temporal evolution of local perturbations

Metal semiconductor contact: Resistivity and noise

Generation-recombination noise at 77°K in silicon bars and JFETs

Noise of hot carriers in the channel of n silicon junction gate field effect transistors

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