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Electronic structure and metallization effects at threading dislocation cores in GaN

Computational materials science, 2014-07, Vol.90, p.71-81

2014

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A new atomistic model for the threading screw dislocation core in wurtzite GaN

Computational materials science, 2012-01, Vol.51 (1), p.206-216

2012

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Electronic structure of threading dislocations in wurtzite GaN

Physica status solidi. C, 2015-08, Vol.12 (8), p.1123-1128

2015

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The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures

Computational materials science, 2013-11, Vol.79, p.118-124

2013

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Energetics and core structure of the undissociated basal screw dislocation in wurtzite GaN

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.221-224

2016

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Structure of the carrot defect in 4H-SiC epitaxial layers

Applied physics letters, 2005-01, Vol.86 (2), p.021905-021905-3

2005

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Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study

Modelling and simulation in materials science and engineering, 2016-10, Vol.24 (7), p.75001

2016

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Atomic core configurations of the a ⇒ -screw basal dislocation in wurtzite GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.212-216

2007

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Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

Journal of applied physics, 2011-09, Vol.110 (5), p.053715-053715-8

2011

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Dissociation of the 60° basal dislocation in wurtzite GaN

Physica status solidi. C, 2013-01, Vol.10 (1), p.84-88

2013

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Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures

Physica status solidi. C, 2014-02, Vol.11 (2), p.289-292

2014

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HREM study of stacking faults in GaN layers grown over sapphire substrate

Journal of physics. Condensed matter, 2000-12, Vol.12 (49), p.10301-10306

2000

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Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy

Applied physics letters, 2005-04, Vol.86 (15)

2005

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Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers

physica status solidi (b), 2001-09, Vol.227 (1), p.177-228

2001

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The atomic and electronic structure of dislocations in Ga-based nitride semiconductors

Philosophical magazine (2003. Print), 2006-05, Vol.86 (15), p.2241-2269

2006

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First principles investigation of barium chalcogenide ternary alloys

Computational materials science, 2009-08, Vol.46 (2), p.376-382

2009

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Core structures of the a -edge dislocation in InN

Applied physics letters, 2007-03, Vol.90 (11), p.111901-111901-3

2007

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Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

Applied physics letters, 1998-04, Vol.72 (14), p.1742-1744

1998

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Study of the properties of CuInSe2 materials prepared from nanoparticle powder

Materials characterization, 2009-05, Vol.60 (5), p.451-455

2009

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An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

Computational materials science, 2000-06, Vol.17 (2-4), p.380-383

2000

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On the origin of a -type threading dislocations in GaN layers

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-11, Vol.23 (6), p.1588-1591

2005

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Meta-GGA calculation of the electronic structure of group III-V nitrides

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1577-1582

2006

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Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

Physica status solidi. A, Applications and materials science, 2010-05, Vol.207 (5), p.1074-1078

2010

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Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.484-487

2012

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Evidence for multiple atomic structure for the {101̄0} inversion domain boundaries in GaN layers

Applied physics letters, 1999-02, Vol.74 (7), p.947-949

1999

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Electronic structure and metallization effects at threading dislocation cores in GaN

A new atomistic model for the threading screw dislocation core in wurtzite GaN

Electronic structure of threading dislocations in wurtzite GaN

The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures

Energetics and core structure of the undissociated basal screw dislocation in wurtzite GaN

Structure of the carrot defect in 4H-SiC epitaxial layers

Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study

Atomic core configurations of the a ⇒ -screw basal dislocation in wurtzite GaN

Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

Dissociation of the 60° basal dislocation in wurtzite GaN

Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures

HREM study of stacking faults in GaN layers grown over sapphire substrate

Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy

Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers

The atomic and electronic structure of dislocations in Ga-based nitride semiconductors

First principles investigation of barium chalcogenide ternary alloys

Core structures of the a -edge dislocation in InN

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

Study of the properties of CuInSe2 materials prepared from nanoparticle powder

An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

On the origin of a -type threading dislocations in GaN layers

Meta-GGA calculation of the electronic structure of group III-V nitrides

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires

Evidence for multiple atomic structure for the {101̄0} inversion domain boundaries in GaN layers

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