UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 382

Sortiert nach

Electronic structure and metallization effects at threading dislocation cores in GaN

Computational materials science, 2014-07, Vol.90, p.71-81

2014

Volltextzugriff (PDF)

A new atomistic model for the threading screw dislocation core in wurtzite GaN

Computational materials science, 2012-01, Vol.51 (1), p.206-216

2012

Volltextzugriff (PDF)

Electronic structure of threading dislocations in wurtzite GaN

Physica status solidi. C, 2015-08, Vol.12 (8), p.1123-1128

2015

Volltextzugriff (PDF)

The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures

Computational materials science, 2013-11, Vol.79, p.118-124

2013

Volltextzugriff (PDF)

Energetics and core structure of the undissociated basal screw dislocation in wurtzite GaN

Physica status solidi. C, 2016-05, Vol.13 (5-6), p.221-224

2016

Volltextzugriff (PDF)

Structure of the carrot defect in 4H-SiC epitaxial layers

Applied physics letters, 2005-01, Vol.86 (2), p.021905-021905-3

2005

Volltextzugriff (PDF)

Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study

Modelling and simulation in materials science and engineering, 2016-10, Vol.24 (7), p.75001

2016

Volltextzugriff (PDF)

Atomic core configurations of the a ⇒ -screw basal dislocation in wurtzite GaN

Journal of crystal growth, 2007-03, Vol.300 (1), p.212-216

2007

Volltextzugriff (PDF)

Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

Journal of applied physics, 2011-09, Vol.110 (5), p.053715-053715-8

2011

Volltextzugriff (PDF)

Dissociation of the 60° basal dislocation in wurtzite GaN

Physica status solidi. C, 2013-01, Vol.10 (1), p.84-88

2013

Volltextzugriff (PDF)

Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures

Physica status solidi. C, 2014-02, Vol.11 (2), p.289-292

2014

Volltextzugriff (PDF)

HREM study of stacking faults in GaN layers grown over sapphire substrate

Journal of physics. Condensed matter, 2000-12, Vol.12 (49), p.10301-10306

2000

Volltextzugriff (PDF)

Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy

Applied physics letters, 2005-04, Vol.86 (15)

2005

Volltextzugriff (PDF)

Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers

physica status solidi (b), 2001-09, Vol.227 (1), p.177-228

2001

Volltextzugriff (PDF)

The atomic and electronic structure of dislocations in Ga-based nitride semiconductors

Philosophical magazine (2003. Print), 2006-05, Vol.86 (15), p.2241-2269

2006

Volltextzugriff (PDF)

First principles investigation of barium chalcogenide ternary alloys

Computational materials science, 2009-08, Vol.46 (2), p.376-382

2009

Volltextzugriff (PDF)

Core structures of the a -edge dislocation in InN

Applied physics letters, 2007-03, Vol.90 (11), p.111901-111901-3

2007

Volltextzugriff (PDF)

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

Applied physics letters, 1998-04, Vol.72 (14), p.1742-1744

1998

Volltextzugriff (PDF)

Study of the properties of CuInSe2 materials prepared from nanoparticle powder

Materials characterization, 2009-05, Vol.60 (5), p.451-455

2009

Volltextzugriff (PDF)

An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

Computational materials science, 2000-06, Vol.17 (2-4), p.380-383

2000

Volltextzugriff (PDF)

On the origin of a -type threading dislocations in GaN layers

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-11, Vol.23 (6), p.1588-1591

2005

Volltextzugriff (PDF)

Meta-GGA calculation of the electronic structure of group III-V nitrides

Physica Status Solidi (b), 2006-06, Vol.243 (7), p.1577-1582

2006

Volltextzugriff (PDF)

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

Physica status solidi. A, Applications and materials science, 2010-05, Vol.207 (5), p.1074-1078

2010

Volltextzugriff (PDF)

Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.484-487

2012

Volltextzugriff (PDF)

Evidence for multiple atomic structure for the {101̄0} inversion domain boundaries in GaN layers

Applied physics letters, 1999-02, Vol.74 (7), p.947-949

1999

Volltextzugriff (PDF)

1 – 25 von 382

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(311)
Mit Volltextzugriff
(354)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Neu hinzugefügt

... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

Electronic structure and metallization effects at threading dislocation cores in GaN

A new atomistic model for the threading screw dislocation core in wurtzite GaN

Electronic structure of threading dislocations in wurtzite GaN

The 60° basal dislocation in wurtzite GaN: Energetics, electronic and core structures

Energetics and core structure of the undissociated basal screw dislocation in wurtzite GaN

Structure of the carrot defect in 4H-SiC epitaxial layers

Core properties and mobility of the basal screw dislocation in wurtzite GaN: a density functional theory study

Atomic core configurations of the a ⇒ -screw basal dislocation in wurtzite GaN

Screw threading dislocations in AlN: Structural and electronic properties of In and O doped material

Dissociation of the 60° basal dislocation in wurtzite GaN

Structural and electronic properties of elastically strained InN/GaN quantum well multilayer heterostructures

HREM study of stacking faults in GaN layers grown over sapphire substrate

Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy

Atomic Structure of Extended Defects in Wurtzite GaN Epitaxial Layers

The atomic and electronic structure of dislocations in Ga-based nitride semiconductors

First principles investigation of barium chalcogenide ternary alloys

Core structures of the a -edge dislocation in InN

Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy

Study of the properties of CuInSe2 materials prepared from nanoparticle powder

An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN

On the origin of a -type threading dislocations in GaN layers

Meta-GGA calculation of the electronic structure of group III-V nitrides

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

Effect of doping on screw threading dislocations in AlN and their role as conductive nanowires

Evidence for multiple atomic structure for the {101̄0} inversion domain boundaries in GaN layers

Suchergebnisse filtern