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Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

Journal of crystal growth, 2002-03, Vol.236 (1), p.155-164

2002

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Structure of III-Sb(001) growth surfaces: the role of heterodimers

Physical review letters, 2000-05, Vol.84 (20), p.4649-4652

2000

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Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures

Physical review. B, Condensed matter, 2003-03, Vol.67 (12), Article 121306

2003

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Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures

Surface science, 2000-10, Vol.465 (3), p.361-371

2000

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Island scaling in strained heteroepitaxy: InAs/GaAs(001)

Physical review letters, 1995-04, Vol.74 (16), p.3209-3212

1995

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Lateral uniformity in HgCdTe layers grown by molecular beam epitaxy

Journal of electronic materials, 2005-06, Vol.34 (6), p.779-785

2005

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Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice

Applied physics letters, 2002-12, Vol.81 (23), p.4452-4454

2002

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Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

Applied physics letters, 1999-03, Vol.74 (12), p.1704-1706

1999

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Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band hgcdte detectors

Journal of electronic materials, 2004-06, Vol.33 (6), p.517-525

2004

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Lateral composition modulation in InAs/GaSb superlattices

Journal of applied physics, 2003-01, Vol.93 (1), p.311-315

2003

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Barrier roughness effects in resonant interband tunnel diodes

Journal of applied physics, 2001-12, Vol.90 (12), p.6177-6181

2001

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Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements

Journal of applied physics, 2001-09, Vol.90 (6), p.2689-2698

2001

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Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy

Surface science, 1999-11, Vol.441 (2-3), p.L911-L916

1999

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Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy

Applied physics letters, 2000-05, Vol.76 (21), p.3017-3019

2000

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Stoichiometry-induced roughness on antimonide growth surfaces

Applied physics letters, 2001-04, Vol.78 (17), p.2440-2442

2001

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Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations

Applied physics letters, 1999-08, Vol.75 (6), p.829-831

1999

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Strain relaxation and interfacial stability in III–V semiconductor strained-layer heteroepitaxy: atomistic and continuum modeling and comparisons with experiments

Computational materials science, 2002-04, Vol.23 (1), p.250-259

2002

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Initial stages of Sb 2 deposition on InAs(0 0 1)

Surface science, 2001-05, Vol.478 (1), p.1-8

2001

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Interface structures of III-V semiconductor heterostructures

International journal of quantum chemistry, 2003, Vol.95 (4-5), p.561-571

2003

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Spectroscopy and Mechanical Modification of Single Strain-Induced Quantum Dots

physica status solidi (b), 2001-03, Vol.224 (1), p.133-137

2001

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Effect of initial surface reconstruction on the GaS/GaAs(001) interface

Applied physics letters, 1999-11, Vol.75 (21), p.3354-3356

1999

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Characterization of AlSb/InAs surfaces and resonant tunneling devices

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999-07, Vol.17 (4), p.1786-1790

1999

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Effects of strain on island scaling studied by Monte Carlo simulations

Surface science, 1996-08, Vol.364 (2), p.164-177

1996

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A two-dimensional ultrahigh vacuum positioner for scanning tunneling microscopy

Review of scientific instruments, 1998-03, Vol.69 (3), p.1403-1405

1998

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Comparison of light emission from stain-etch and anodic-etch silicon films

Applied physics letters, 1992-12, Vol.61 (24), p.2896-2898

1992

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Surface morphology of homoepitaxial GaSb films grown on flat and vicinal substrates

Structure of III-Sb(001) growth surfaces: the role of heterodimers

Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures

Interpreting interfacial structure in cross-sectional STM images of III–V semiconductor heterostructures

Island scaling in strained heteroepitaxy: InAs/GaAs(001)

Lateral uniformity in HgCdTe layers grown by molecular beam epitaxy

Spontaneous growth of an InAs nanowire lattice in an InAs/GaSb superlattice

Effects of surface reconstruction on III–V semiconductor interface formation: The role of III/V composition

Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band hgcdte detectors

Lateral composition modulation in InAs/GaSb superlattices

Barrier roughness effects in resonant interband tunnel diodes

Deformation behavior of coherently strained InAs/GaAs(111)A heteroepitaxial systems: Theoretical calculations and experimental measurements

Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy

Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy

Stoichiometry-induced roughness on antimonide growth surfaces

Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations

Strain relaxation and interfacial stability in III–V semiconductor strained-layer heteroepitaxy: atomistic and continuum modeling and comparisons with experiments

Initial stages of Sb 2 deposition on InAs(0 0 1)

Interface structures of III-V semiconductor heterostructures

Spectroscopy and Mechanical Modification of Single Strain-Induced Quantum Dots

Effect of initial surface reconstruction on the GaS/GaAs(001) interface

Characterization of AlSb/InAs surfaces and resonant tunneling devices

Effects of strain on island scaling studied by Monte Carlo simulations

A two-dimensional ultrahigh vacuum positioner for scanning tunneling microscopy

Comparison of light emission from stain-etch and anodic-etch silicon films

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