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High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

IEEE transactions on electron devices, 2003-09, Vol.50 (9), p.1961-1969

2003

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Secondary epitaxial orientations in high lattice mismatch systems: A case study for YBa2Cu3O7-δ and SrO thin films deposited on (0 0 1)MgO

Journal of crystal growth, 2021-08, Vol.568-569, p.126164, Article 126164

Norris, D.J.

2021

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Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

IEEE transactions on electron devices, 2004-08, Vol.51 (8), p.1245-1253

2004

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Doping semiconductor nanocrystals

Nature, 2005-07, Vol.436 (7047), p.91-94

2005

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Comparison of cross‐sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

Journal of microscopy (Oxford), 2017-12, Vol.268 (3), p.288-297

2017

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Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Thin solid films, 2012-02, Vol.520 (8), p.3222-3226

2012

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Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Solid-state electronics, 2003-08, Vol.47 (8), p.1289-1295

2003

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Three-Dimensional Imaging of Single Molecules Solvated in Pores of Poly (acrylamide) Gels

Science (American Association for the Advancement of Science), 1996-11, Vol.274 (5289), p.966-969

1996

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Directed ortho metalation of n,n-diethyl benzamides. Methodology and regiospecific synthesis of useful contiguously tri- and tetra-substituted oxygenated aromatics, phthalides and phthalic anhydrides

Tetrahedron, 1992-06, Vol.48 (23), p.4863-4878

1992

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Measurement of epitaxial misorientations and related effects in thin films of YBa 2Cu 3O 7-δ grown on nominally (001)MgO substrates by pulsed laser deposition

Thin solid films, 2003, Vol.423 (1), p.33-40

2003

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Imaging ‘Invisible’ Dopant Atoms in Semiconductor Nanocrystals

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.298-299

2012

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Toward Silicon-Based Lasers for Terahertz Sources

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1570-1578

2006

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Surface elemental segregation and the Stranski–Krastanow epitaxial islanding transition

Applied surface science, 2005-05, Vol.244 (1), p.65-70

2005

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Visible versus actual incidence of Armillaria root disease in juvenile coniferous stands in the southern interior of British Columbia

Canadian journal of forest research, 2000-03, Vol.30 (3), p.405-414

2000

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Measurement of epitaxial misorientations and related effects in thin films of YBa2Cu3O7-δ grown on nominally (001)MgO substrates by pulsed laser deposition

Thin solid films, 2003, Vol.423 (1), p.33-40

2003

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Techniques for the Study of Mycorrhiza

1, 1991

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SiGe quantum cascade structures for light emitting devices

Journal of crystal growth, 2005-05, Vol.278 (1), p.488-494

2005

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Bacterial Contamination of Tube-Feeding Formulas

JPEN. Journal of parenteral and enteral nutrition, 1984-11, Vol.8 (6), p.673-678

1984

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The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

Thin solid films, 2006-02, Vol.496 (2), p.306-310

2006

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Reconnaissance 3-D Seismic as a Modern Exploration Tool

Energy exploration & exploitation, 1988-04, Vol.6 (2), p.118-125

Norris, D.J.

1988

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Quantitative analysis of gate–oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures

Thin solid films, 2005-03, Vol.474 (1-2), p.154-158

2005

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Si-based electroluminescence at THz frequencies

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-02, Vol.89 (1), p.10-12

2002

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Optical cavities for Si/SiGe tetrahertz quantum cascade emitters

Optical materials, 2005-02, Vol.27 (5), p.851-854

2005

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Stranski-Krastanow transition and epitaxial island growth

Physical review. B, Condensed matter, 2002-08, Vol.66 (8), Article 081305

2002

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Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

Materials science & engineering. B, Solid-state materials for advanced technology, 2004-06, Vol.109 (1-3), p.78-84

2004

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High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

Secondary epitaxial orientations in high lattice mismatch systems: A case study for YBa2Cu3O7-δ and SrO thin films deposited on (0 0 1)MgO

Study of single- and dual-channel designs for high-performance strained-Si-SiGe n-MOSFETs

Doping semiconductor nanocrystals

Comparison of cross‐sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Impact of virtual substrate quality on performance enhancements in strained Si/SiGe heterojunction n-channel MOSFETs

Three-Dimensional Imaging of Single Molecules Solvated in Pores of Poly (acrylamide) Gels

Directed ortho metalation of n,n-diethyl benzamides. Methodology and regiospecific synthesis of useful contiguously tri- and tetra-substituted oxygenated aromatics, phthalides and phthalic anhydrides

Measurement of epitaxial misorientations and related effects in thin films of YBa 2Cu 3O 7-δ grown on nominally (001)MgO substrates by pulsed laser deposition

Imaging ‘Invisible’ Dopant Atoms in Semiconductor Nanocrystals

Toward Silicon-Based Lasers for Terahertz Sources

Surface elemental segregation and the Stranski–Krastanow epitaxial islanding transition

Visible versus actual incidence of Armillaria root disease in juvenile coniferous stands in the southern interior of British Columbia

Measurement of epitaxial misorientations and related effects in thin films of YBa2Cu3O7-δ grown on nominally (001)MgO substrates by pulsed laser deposition

Techniques for the Study of Mycorrhiza

SiGe quantum cascade structures for light emitting devices

Bacterial Contamination of Tube-Feeding Formulas

The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

Reconnaissance 3-D Seismic as a Modern Exploration Tool

Quantitative analysis of gate–oxide interface roughening in SiGe/Si virtual substrate-based transistor device structures

Si-based electroluminescence at THz frequencies

Optical cavities for Si/SiGe tetrahertz quantum cascade emitters

Stranski-Krastanow transition and epitaxial island growth

Thermal oxidation of strained Si/SiGe: impact of surface morphology and effect on MOS devices

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