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Can spatialisation be extended to episodic memory and open sets?

Memory (Hove), 2018, Vol.26 (August) (7), p.1-14

2018

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Post electrochemical Cu deposition anneal impact on stress-voiding in individual vias

Microelectronic engineering, 2008-10, Vol.85 (10), p.2146-2149

2008

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New generation of Self Ionized Plasma copper seed for sub 40 nm nodes

Microelectronic engineering, 2011-05, Vol.88 (5), p.697-700

2011

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Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32 nm NMOSFETs

Microelectronic engineering, 2011-05, Vol.88 (5), p.569-572

2011

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Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances

Microelectronic engineering, 2010-03, Vol.87 (3), p.421-425

2010

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Characterization and impact of reduced copper plating overburden on 45nm interconnect performances

Microelectronic engineering, 2010-03, Vol.87 (3), p.421-425

2010

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Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs

Microelectronic engineering, 2011-05, Vol.88 (5), p.569-572

2011

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Comparison of radio frequency physical vapor deposition target material used for LaO sub(x cap layer deposition in 32 nm NMOSFETs)

Microelectronic engineering, 2011-05, Vol.88 (5), p.569-572

2011

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Integrated monitoring of ULK dielectrics out-gassing and measurement of pore sealing efficiency by residual gas analysis technique

Microelectronic engineering, 2007-11, Vol.84 (11), p.2719-2722

2007

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Comparison of radio frequency physical vapor deposition target material used for LaO x cap layer deposition in 32 nm NMOSFETs

Microelectronic engineering, 2011, Vol.88 (5), p.569-572

2011

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Improved electrical and reliability performance of 65 nm interconnects with new barrier integration schemes

Microelectronic engineering, 2006-11, Vol.83 (11), p.2377-2380

2006

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Improved electrical and reliability performance of 65nm interconnects with new barrier integration schemes

Microelectronic engineering, 2006-11, Vol.83 (11-12), p.2377-2380

2006

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X-Ray Diffraction Determination of the Effect of Passivations on Stress in Patterned Lines of Tungsten

MRS proceedings, 1994, Vol.338, Article 241

1994

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X-RAY Determination and Analysis of Residual Stresses in Uniform Films and Patterned Lines of Tungsten

MRS proceedings, 1993, Vol.309, Article 217

1993

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X-ray Determination and Analysis of Residual Stresses in Uniform Films and Patterned Lines of Tungsten

MRS proceedings, 1993, Vol.308, Article 285

1993

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Internal Stresses and Adhesion Properties of Film/Substrate Interfaces

MRS proceedings, 1990, Vol.188, Article 97

1990

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Experimental Analysis of the Adhesion of Copper and Chromium Films Deposited on a Polymer

MRS proceedings, 1992, Vol.264, Article 207

1992

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Collimation, The Solution to Push Standard Ti-TiN PVD to 0.35μm Technology

ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference, 1995, p.127-130

1995

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Can spatialisation be extended to episodic memory and open sets?

Post electrochemical Cu deposition anneal impact on stress-voiding in individual vias

New generation of Self Ionized Plasma copper seed for sub 40 nm nodes

Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32 nm NMOSFETs

Characterization and impact of reduced copper plating overburden on 45 nm interconnect performances

Characterization and impact of reduced copper plating overburden on 45nm interconnect performances

Comparison of radio frequency physical vapor deposition target material used for LaOx cap layer deposition in 32nm NMOSFETs

Comparison of radio frequency physical vapor deposition target material used for LaO sub(x cap layer deposition in 32 nm NMOSFETs)

Integrated monitoring of ULK dielectrics out-gassing and measurement of pore sealing efficiency by residual gas analysis technique

Comparison of radio frequency physical vapor deposition target material used for LaO x cap layer deposition in 32 nm NMOSFETs

Improved electrical and reliability performance of 65 nm interconnects with new barrier integration schemes

Improved electrical and reliability performance of 65nm interconnects with new barrier integration schemes

X-Ray Diffraction Determination of the Effect of Passivations on Stress in Patterned Lines of Tungsten

X-RAY Determination and Analysis of Residual Stresses in Uniform Films and Patterned Lines of Tungsten

X-ray Determination and Analysis of Residual Stresses in Uniform Films and Patterned Lines of Tungsten

Internal Stresses and Adhesion Properties of Film/Substrate Interfaces

Experimental Analysis of the Adhesion of Copper and Chromium Films Deposited on a Polymer

Collimation, The Solution to Push Standard Ti-TiN PVD to 0.35μm Technology

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